Abstract: Provided is a method for fabricating a semiconductor device, which includes the following steps. First, a substrate having at least one transistor is provided. A first insulation layer is formed to cover the transistor. The first insulation layer is patterned to form at least one opening, wherein a part of the transistor is exposed by the opening. At last, an epitaxy is formed in the opening to cover the part of the transistor.

Abstract: A polyoxymethylene composition includes a polyoxymethylene copolymer with 1,3-dioxolane as a comonomer, a wear resistance agent, a nucleating agent, and an antistatic agent. A ramp is made of the polyoxymethylene composition. The ramp and the polyoxymethylene have excellent low-wear-debris property. The low wear debris polyoxymethylene composition can be used to produce a ramp for many different designs of hard disks, such as PMR (perpendicular recording)+TDMR (Two-Dimensional Magnetic Recording), SMR (Shingled Magnetic Recording), HAMR+ (HAMR (Heat Assisted Magnetic Recording)+SMR+TDMR), BPMR+ (BPMR (Bit Pattern Media Recording)+SMR+TDMR), and helium-filled hard disk.

Abstract: A polyoxymethylene composition includes a polyoxymethylene copolymer with 1,3-dioxolane as a comonomer, a wear resistance agent, a nucleating agent, and an antistatic agent. A ramp is made of the polyoxymethylene composition. The ramp and the polyoxymethylene have excellent low-wear-debris property. The low wear debris polyoxymethylene composition can be used to produce a ramp for many different designs of hard disks, such as PMR (perpendicular recording)+TDMR (Two-Dimensional Magnetic Recording), SMR (Shingled Magnetic Recording), HAMR+ (HAMR (Heat Assisted Magnetic Recording)+SMR+TDMR), BPMR+ (BPMR (Bit Pattern Media Recording)+SMR+TDMR), and helium-filled hard disk.

Abstract: A semiconductor device includes a transistor disposed on a substrate, a first insulation layer, a second insulation layer, an epitaxy and a conductive material. The first insulation layer is disposed on the substrate and protruding over the transistor. The first insulation layer has a recess to expose a top portion of the transistor. The second insulation layer is disposed on the first insulation layer and conforms to the recess and exposes the top portion of the transistor. The epitaxy is disposed in the recess of the first insulation layer and overlaps the top portion of the transistor. The epitaxy conforms to sidewalls of the recess of the first insulation layer. The conductive material is disposed in the recess of the first insulation layer.

Abstract: Provided is a method for fabricating a semiconductor device, which includes the following steps. First, a substrate having at least one transistor is provided. A first insulation layer is formed to cover the transistor. The first insulation layer is patterned to form at least one opening, wherein a part of the transistor is exposed by the opening. At last, an epitaxy is formed in the opening to cover the part of the transistor.