Abstract: A method for improving the stability of an anti-reflection coating layer is provided. The anti-reflection coating layer covered by a SiOxNy layer is provided. A surface treatment step is performed with an oxidizer-based plasma on the SiOxNy layer to form an oxide layer. The oxidizer-based plasma comprises O2, and N2O.

Abstract: The present invention is directed towards a method of fabricating a self-aligned silicide on gate electrode and source/drain region of a semiconductor device. A semiconductor substrate having gate oxide layer and polysilicon layer is provided. Next, a first silicide layer is formed on polysilicon layer. The substrate is patterned and then, etched to form a gate structure. A spacer is formed on the sidewall of the gate structure and source/drain region is formed adjacent thereto. A metal layer is covered on the surface of the substrate. The substrate is performed a thermal process to convert the portion of the metal layer on gate structure and source/drain region into self-aligned silicide.