Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.

Abstract: An electronic device includes a bond wire with a first end bonded by a ball bond to a planar side of a first conductive plate, and a second end bonded by a stitch bond to a conductive stud bump at an angle greater than or equal to 60 degrees. A wirebonding method includes bonding the first end of the conductive bond wire to the first conductive plate includes forming a ball bond to join the first end of the conductive bond wire to a planar side of the first conductive plate by a ball bond, and bonding the second end of the conductive bond wire to the conductive stud bump includes forming a stitch bond to join the second end of the conductive bond wire to the conductive stud bump.

Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.

Abstract: A capacitive ultrasonic transducer device includes a substrate, a first capacitive structure, a second capacitive structure, a first film structure and a second film structure. The first capacitive structure is disposed on the substrate, and includes a first electrode and a second electrode. A first gap and a dielectric layer are located between the first electrode and the second electrode. The second capacitive structure is disposed on the substrate, and includes a third electrode and a fourth electrode. A second gap is located between the third electrode and the fourth electrode. The first film structure is configured to seal the first gap. The second film structure is connected to the third electrode and the fourth electrode, and configured to seal the second gap. A first width between the first electrode and the second electrode is different from a second width of the second gap.

Abstract: A disturb-free static random access memory cell includes: a latch circuit having a first access terminal and a second access terminal; a first switching circuit having a first bit transferring terminal coupled to the first access terminal, a first control terminal coupled to a first write word line, and a second bit transferring terminal; a second switching circuit having a third bit transferring terminal coupled to the second access terminal, a second control terminal coupled to a second write word line, and a fourth bit transferring terminal coupled to the second bit transferring terminal; a third switching circuit having a fifth bit transferring terminal coupled to the fourth bit transferring terminal, a third control terminal coupled to a word line, and a sixth bit transferring terminal coupled to a bit line; and a sensing amplifier coupled to the bit line, for determining a bit value appearing at the bit line.

Abstract: A memory circuit includes a first memory array, a second memory array and a switch module, wherein the first memory array has a first node and a second node, the second memory array has a third node and a fourth node, the first node is coupled to a first supply voltage, and the fourth supply voltage is coupled to a second supply voltage smaller than the first supply voltage. The switch module is coupled to the second node, the third node, the first supply voltage and the second supply voltage. When the memory circuit is operated under an inactive mode, the switch module electrically connects the second node to the third node, electrically disconnects the second node from the second supply voltage, and electrically disconnects the third node from the first supply voltage.

Abstract: A memory circuit includes a first memory array, a second memory array and a switch module, wherein the first memory array has a first node and a second node, the second memory array has a third node and a fourth node, the first node is coupled to a first supply voltage, and the fourth supply voltage is coupled to a second supply voltage smaller than the first supply voltage. The switch module is coupled to the second node, the third node, the first supply voltage and the second supply voltage. When the memory circuit is operated under an inactive mode, the switch module electrically connects the second node to the third node, electrically disconnects the second node from the second supply voltage, and electrically disconnects the third node from the first supply voltage.

Abstract: A disturb-free static random access memory cell includes: a latch circuit having a first access terminal and a second access terminal; a first switching circuit having a first bit transferring terminal coupled to the first access terminal, a first control terminal coupled to a first write word line, and a second bit transferring terminal; a second switching circuit having a third bit transferring terminal coupled to the second access terminal, a second control terminal coupled to a second write word line, and a fourth bit transferring terminal coupled to the second bit transferring terminal; a third switching circuit having a fifth bit transferring terminal coupled to the fourth bit transferring terminal, a third control terminal coupled to a word line, and a sixth bit transferring terminal coupled to a bit line; and a sensing amplifier coupled to the bit line, for determining a bit value appearing at the bit line.

Abstract: A leakage current control circuit with a single low voltage power supply is provided. The circuit includes a first power supply line, a second power supply line, a ground line, a high voltage generating circuit, a power transistor and a control circuit. The high voltage generating circuit generates a voltage in response to an internal sleep signal. The gate electrode of the power transistor is connected to the output of the high-voltage generating circuit such that the power transistor is controlled by the high voltage generating circuit. When the power transistor turns on, the circuit is in operation mode; when the power transistor is off, the circuit is in sleep mode. The control circuit connects to the first power line, the second power line, and the ground line to output the internal sleep signal in response to the sleep signal.

Abstract: A soap dish includes an open first container including parallel slits on a bottom; and a second container fitted in the first container and including rows of conic top projections, the rows of projections being adapted to support a soap bar, and rows of apertures each row of apertures being disposed between two adjacent rows of projections. Water stored in the second container is adapted to flow to the first container by passing the apertures, water stored in the first container is adapted to carry off through the slits, and outside air is adapted to reach a bottom of the soap bar via the slits and the rows of apertures. This can maximize air flow around the soap bar. In one embodiment, the aperture is shaped as a funnel. Also, the apexes of the rows of projections are either flush with each other or shaped as a concave curve.

Abstract: This invention provides An AND type match circuit structure for content-addressable memories adopting the Pseudo-Footless Clock-and-Data Pre-charged Dynamic circuit as an AND type match circuit structure, which comprises a plurality of circuit stages. Each circuit stage connects a CMOS to a plurality of NMOS in series, wherein the CMOS is connected to the input of an inverter and a PMOS that is in parallel to the inverter, and the output of the inverter is connected to the CMOS gate of the next circuit stage. The output of the last stage inverter on the Pseudo-Footless Clock-and-Data Pre-charged Dynamic circuit is connected to an AND gate logic circuit.

Abstract: The present invention discloses a flip-flop implemented with metal-oxide semiconductors using a single low-voltage power supply and a control method thereof, wherein an external control signal is input to a power switch in order to turn on the power switch for an active mode or to turn off the power switch for a sleep mode and inputting an external sleep control signal; the power switch is used to control a combinational circuit to enter into the active or the sleep mode, and the combinational circuit is connected to a virtual power supply; an internal clock signal is separately input to a master stage and a slave stage of the flip-flop, and whether to enter into the sleep mode or the active mode is determined by the voltage level of the internal clock signal. In the present invention, all the logic gates of the combinational circuit are formed of low-threshold CMOS's, which enables the present invention to maintain a given operation speed at a lower voltage.

Abstract: The present invention discloses a flip-flop implemented with metal-oxide semiconductors using a single low-voltage power supply and a control method thereof, wherein an external control signal is input to a power switch in order to turn on the power switch for an active mode or to turn off the power switch for a sleep mode and inputting an external sleep control signal; the power switch is used to control a combinational circuit to enter into the active or the sleep mode, and the combinational circuit is connected to a virtual power supply; an internal clock signal is separately input to a master stage and a slave stage of the flip-flop, and whether to enter into the sleep mode or the active mode is determined by the voltage level of the internal clock signal. In the present invention, all the logic gates of the combinational circuit are formed of low-threshold CMOS's, which enables the present invention to maintain a given operation speed at a lower voltage.

Abstract: A leakage current control circuit with a single low voltage power supply is provided. The circuit includes a first power supply line, a second power supply line, a ground line, a high voltage generating circuit, a power transistor and a control circuit. The high voltage generating circuit generates a voltage in response to an internal sleep signal. The gate electrode of the power transistor is connected to the output of the high-voltage generating circuit such that the power transistor is controlled by the high voltage generating circuit. When the power transistor turns on, the circuit is in operation mode; when the power transistor is off, the circuit is in sleep mode. The control circuit connects to the first power line, the second power line, and the ground line to output the internal sleep signal in response to the sleep signal.

Abstract: A soap dish comprises an open first container including a plurality of parallel slits on a bottom; and a second container fitted in the first container, the second container including a plurality of rows of cones on a bottom, the rows of cones being adapted to support a soap, and a plurality of rows of apertures each row of apertures being disposed between two adjacent rows of cones, wherein water stored in the second container is adapted to carry off through the rows of apertures by passing the cones; and outside air is adapted to reach the soap via the rows of apertures.

Abstract: The present invention is related to a circuit of SRAM with current-mode write-circuits. The current-mode write-operation is through the equalization technique in advance to equalize the potential in the memory cell by using the equalization transistor. After the equalization operation, the current conveyor should pass the differential current of data into the memory cell in order to make the differential current to pull out the differential voltage through the memory cell's strong positive feedback. The present invention has seven transistors in the memory cell that is different from the conventional memory cell with six transistors. Besides, the size of each transistor can also be different from the conventional design.