Abstract: A method for filling recessed features with a low-resistivity metal. The method includes providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature, forming a nucleation enhancement layer on a sidewall of the first layer in the recessed feature and depositing a metal layer in the recessed feature by vapor phase deposition, where the metal layer is deposited on the second layer and on the nucleation enhancement layer. An initial metal layer may be selectively formed on the second layer in the recessed feature before forming the nucleation enhancement layer.

Abstract: A method for recognizing a motion state of an object by using a millimeter wave radar having at least one antenna is disclosed. The method includes the following steps. A region is set to select an object in the region, wherein the object has M ranges and M azimuths between the object and the at least one antenna during a first motion time. Each of the M ranges and the M azimuths are projected on a two-dimensional (2D) plane to form M frames. The M frames are sequentially arranged into a first consecutive candidate frames having a time sequence. The first consecutive candidate frames are inputted into an artificial intelligence model to determine a motion state type of the first consecutive candidate frames.

Abstract: A whole blood measurement method associated to hematocrit (HCT) and a whole blood measurement circuit thereof is applied in the detection of HCT of a whole blood sample to be tested. Herein, a time to digital converting circuit (TDC) is used for counting charging time or discharging time of a fixed capacitor and a to-be-tested sample, and a capacitance difference that is related to HCT is generated according to the charging time or the discharging time, so as to provide a reference for a whole blood feature test.

Abstract: A whole blood measurement method associated to hematocrit (HCT) and a whole blood measurement circuit thereof is applied in the detection of HCT of a whole blood sample to be tested. Herein, a time to digital converting circuit (TDC) is used for counting charging time or discharging time of a fixed capacitor and a to-be-tested sample, and a capacitance difference that is related to HCT is generated according to the charging time or the discharging time, so as to provide a reference for a whole blood feature test.

Abstract: A whole blood measurement method associated to hematocrit (HCT) and a whole blood measurement circuit thereof is applied in the detection of HCT of a whole blood sample to be tested. Herein, a time to digital converting circuit (TDC) is used for counting charging time or discharging time of a fixed capacitor and a to-be-tested sample, and a capacitance difference that is related to HCT is generated according to the charging time or the discharging time, so as to provide a reference for a whole blood feature test.

Abstract: A whole blood measurement method associated to hematocrit (HCT) and a whole blood measurement circuit thereof is applied in the detection of HCT of a whole blood sample to be tested. Herein, a time to digital converting circuit (TDC) is used for counting charging time or discharging time of a fixed capacitor and a to-be-tested sample, and a capacitance difference that is related to HCT is generated according to the charging time or the discharging time, so as to provide a reference for a whole blood feature test.

Abstract: Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si.sub.(1-X) Ge.sub.X is presented, including the steps of maintaining the substrate at certain temperature (e.g. between 300.degree. C. and 400.degree. C.) and pressure conditions (e.g. below 2.times.10.sup.-9 millibar) while aluminum atoms are deposited by a vacuum evaporation technique. This is apparently the first method of depositing single crystal aluminum on SiGe surfaces. Novel structures are made possible by the invention, including epitaxial layers 34 formed on single crystal aluminum 32 which has been deposited on SiGe 30. Among the advantages made possible by the methods presented are thermal stability and resistance to electromigration.

Abstract: Single crystal aluminum is deposited on SiGe structures to form metal interconnects. Generally, a method of forming single crystal aluminum on Si.sub.(1-x) Ge.sub.x is presented, including the steps of maintaining the substrate at certain temperature (e.g. between 300.degree. C. and 400.degree. C.) and pressure conditions (e.g. below 2.times.10.sup.-9 millibar) while aluminum atoms are deposited by a vacuum evaporation technique. This is apparently the first method of depositing single crystal aluminum on SiGe surfaces. Novel structures are made possible by the invention, including epitaxial layers 34 formed on single crystal aluminum 32 which has been deposited on SiGe 30. Among the advantages made possible by the methods presented are thermal stability and resistance to electromigration.

Abstract: In one form of the invention, a method is disclosed for growing CaF.sub.2 on a silicon surface, comprising the steps of maintaining the silicon surface at a first temperature below approximately 500.degree. C., starting a deposition of CaF.sub.2 on the silicon surface, stopping the deposition, and then annealing the CaF.sub.2 in forming gas at a temperature below 600.degree. C.