Patents by Inventor Hung-Yu Yeh

Hung-Yu Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149172
    Abstract: A device comprises a plurality of nanosheets, source/drain stressors, and a gate structure wrapping around the nanosheets. The nanosheets extend in a first direction above a semiconductor substrate and are arranged in a second direction substantially perpendicular to the first direction. The source/drain stressors are on either side of the nanosheets. Each of the source/drain stressors comprises a first epitaxial layer and a second epitaxial layer over the first epitaxial layer. The first and second epitaxial layers are made of a Group IV element and a Group V element. An atomic ratio of the Group V element to the Group IV element in the second epitaxial layer is greater than an atomic ratio of the Group V element to the Group IV element in the first epitaxial layer.
    Type: Application
    Filed: January 24, 2022
    Publication date: May 12, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chung-En TSAI, Chia-Che CHUNG, Chee-Wee LIU, Fang-Liang LU, Yu-Shiang HUANG, Hung-Yu YEH, Chien-Te TU, Yi-Chun LIU
  • Patent number: 11233120
    Abstract: The present disclosure generally relates to a gate-all-around (GAA) transistor. The GAA transistor may include regrown source/drain layers in source/drain stressors. Atomic ratio differences among the regrown source/drain layers are tuned to reduce strain mismatch among the semiconductor nanosheets. Alternatively, the GAA transistor may include strained channels formed using a layer stack of alternating semiconductor layers having different lattice constants.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: January 25, 2022
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chung-En Tsai, Chia-Che Chung, Chee-Wee Liu, Fang-Liang Lu, Yu-Shiang Huang, Hung-Yu Yeh, Chien-Te Tu, Yi-Chun Liu
  • Publication number: 20210328012
    Abstract: A method includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers over a substrate; forming a dummy gate structure across the fin structure; etching portions of the fin structure to expose portions of the substrate; forming source/drain stressors over the exposed portions of the substrate; after forming the source/drain stressors, removing the dummy gate structure; after removing the dummy gate structure, removing the first semiconductor layers such that the second semiconductor layers are suspended between the source/drain stressors; and forming a gate structure to surround each of the suspended second semiconductor layers. The source/drain stressors each comprise a first source/drain layer and a second source/drain layer over the first source/drain layer. An atomic concentration of a Group IV element or a Group V element in the second source/drain layer is greater than that in the first source/drain layer.
    Type: Application
    Filed: April 16, 2020
    Publication date: October 21, 2021
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chung-En TSAI, Chia-Che CHUNG, Chee-Wee LIU, Fang-Liang LU, Yu-Shiang HUANG, Hung-Yu YEH, Chien-Te TU, Yi-Chun LIU
  • Publication number: 20200373334
    Abstract: A MOSFET structure including stacked vertically isolated MOSFETs and a method for forming the same are disclosed.
    Type: Application
    Filed: August 14, 2020
    Publication date: November 26, 2020
    Inventors: Yu-Shiang Huang, Hung-Yu Yeh, Wen Hung Huang, Chee Wee Liu
  • Patent number: 10748935
    Abstract: A MOSFET structure including stacked vertically isolated MOSFETs and a method for forming the same are disclosed.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: August 18, 2020
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Yu-Shiang Huang, Hung-Yu Yeh, Wen Hung Huang, Chee-Wee Liu
  • Publication number: 20200006389
    Abstract: A MOSFET structure including stacked vertically isolated MOSFETs and a method for forming the same are disclosed.
    Type: Application
    Filed: October 4, 2018
    Publication date: January 2, 2020
    Inventors: Yu-Shiang Huang, Hung-Yu Yeh, Wen Hung Huang, Chee-Wee Liu
  • Publication number: 20190326437
    Abstract: A semiconductor device includes a fin extending along a first direction over a substrate, and a gate structure extending in a second direction overlying the fin. The gate structure includes a gate dielectric layer overlying the fin, a gate electrode overlying the gate dielectric layer, and insulating gate sidewalls on opposing lateral surfaces of the gate electrode extending along the second direction. A source/drain region is formed in the fin in a region adjacent the gate electrode structure, and a stressor layer is between the source/drain region and the semiconductor substrate. The stressor layer includes GeSn or SiGeSn containing 1019 atoms cm?3 or less of a dopant, and a portion of the fin under the gate structure is a channel region.
    Type: Application
    Filed: July 1, 2019
    Publication date: October 24, 2019
    Inventors: Huang-Siang LAN, CheeWee LIU, Chi-Wen LIU, Shih-Hsien HUANG, I-Hsieh WONG, Hung-Yu YEH, Chung-En TSAI
  • Patent number: 10340383
    Abstract: A semiconductor device includes a fin extending along a first direction over a substrate, and a gate structure extending in a second direction overlying the fin. The gate structure includes a gate dielectric layer overlying the fin, a gate electrode overlying the gate dielectric layer, and insulating gate sidewalls on opposing lateral surfaces of the gate electrode extending along the second direction. A source/drain region is formed in the fin in a region adjacent the gate electrode structure, and a stressor layer is between the source/drain region and the semiconductor substrate. The stressor layer includes GeSn or SiGeSn containing 1019 atoms cm?3 or less of a dopant, and a portion of the fin under the gate structure is a channel region.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: July 2, 2019
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Huang-Siang Lan, CheeWee Liu, Chi-Wen Liu, Shih-Hsien Huang, I-Hsieh Wong, Hung-Yu Yeh, Chung-En Tsai
  • Patent number: 9923093
    Abstract: Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the first source/drain layer. A second source/drain layer is formed over the channel layer. The first source/drain layer, the channel layer, and the second source/drain layer are patterned to form a fin-shaped structure. A gate stack is formed on a sidewall of the fin-shaped structure. The fin-shaped structure is patterned to expose a top surface of the first source/drain layer.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: March 20, 2018
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Chee Wee Liu, Samuel C. Pan, I-Hsieh Wong, Hung-Yu Yeh
  • Patent number: 9812558
    Abstract: A method includes providing a substrate having a mesa, forming a first opening in the mesa, the first opening being surrounded by first inner sidewalls of the mesa exposed by the first opening. The method further includes etching from a first one of the first inner sidewalls of the mesa to form a first vertical recess, the first vertical recess having a wide end and a narrow end, with the narrow end defining a first vertically recessed channel region, and forming a first gate structure over the first vertically recessed channel region.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: November 7, 2017
    Assignees: National Taiwan University, Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jhih-Yang Yan, Samuel C. Pan, Chee Wee Liu, Hung-Yu Yeh, Da-Zhi Zhang
  • Publication number: 20170278968
    Abstract: A semiconductor device includes a fin extending along a first direction over a substrate, and a gate structure extending in a second direction overlying the fin. The gate structure includes a gate dielectric layer overlying the fin, a gate electrode overlying the gate dielectric layer, and insulating gate sidewalls on opposing lateral surfaces of the gate electrode extending along the second direction. A source/drain region is formed in the fin in a region adjacent the gate electrode structure, and a stressor layer is between the source/drain region and the semiconductor substrate. The stressor layer includes GeSn or SiGeSn containing 1019 atoms cm? or less of a dopant, and a portion of the fin under the gate structure is a channel region.
    Type: Application
    Filed: September 27, 2016
    Publication date: September 28, 2017
    Inventors: Huang-Siang LAN, CheeWee LIU, Chi-Wen LIU, Shih-Hsien HUANG, I-Hsieh WONG, Hung-Yu YEH, Chung-En TSAI
  • Publication number: 20170194464
    Abstract: A method includes providing a substrate having a mesa, forming a first opening in the mesa, the first opening being surrounded by first inner sidewalls of the mesa exposed by the first opening. The method further includes etching from a first one of the first inner sidewalls of the mesa to form a first vertical recess, the first vertical recess having a wide end and a narrow end, with the narrow end defining a first vertically recessed channel region, and forming a first gate structure over the first vertically recessed channel region.
    Type: Application
    Filed: March 22, 2017
    Publication date: July 6, 2017
    Inventors: Jhih-Yang Yan, Samuel C. Pan, Chee Wee Liu, Hung-Yu Yeh, Da-Zhi Zhang
  • Patent number: 9627411
    Abstract: Three-dimensional (3D) transistors and methods of manufacturing thereof include a first semiconductor fin extending over a substrate. The first semiconductor fin has a vertical recess extending from a first sidewall of the first semiconductor fin toward a second sidewall of the first semiconductor fin opposite the first sidewall. A distance between two opposing sidewalls of the vertical recess decreases as the vertical recess extends toward the second sidewall of the first semiconductor fin. The device further includes a vertically recessed channel region between the second sidewall of the first semiconductor fin and a bottom of the vertical recess, source/drain (S/D) regions at opposite ends of the vertically recessed channel region, and a gate stack over the vertically recessed channel region.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: April 18, 2017
    Assignees: Taiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
    Inventors: Jhih-Yang Yan, Samuel C. Pan, Chee Wee Liu, Hung-Yu Yeh, Da-Zhi Zhang
  • Publication number: 20170098706
    Abstract: Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the first source/drain layer. A second source/drain layer is formed over the channel layer. The first source/drain layer, the channel layer, and the second source/drain layer are patterned to form a fin-shaped structure. A gate stack is formed on a sidewall of the fin-shaped structure. The fin-shaped structure is patterned to expose a top surface of the first source/drain layer.
    Type: Application
    Filed: December 15, 2016
    Publication date: April 6, 2017
    Inventors: Chee Wee Liu, Samuel C. Pan, I-Hsieh Wong, Hung-Yu Yeh
  • Patent number: 9559209
    Abstract: Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the first source/drain layer. A second source/drain layer is formed over the channel layer. The first source/drain layer, the channel layer, and the second source/drain layer are patterned to form a fin-shaped structure. A gate stack is formed on a sidewall of the fin-shaped structure. The fin-shaped structure is patterned to expose a top surface of the first source/drain layer.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: January 31, 2017
    Assignees: Taiwan Semiconductor Manufacturing Company Ltd., National Taiwan University
    Inventors: Chee Wee Liu, Samuel C. Pan, I-Hsieh Wong, Hung-Yu Yeh
  • Publication number: 20160365457
    Abstract: Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the first source/drain layer. A second source/drain layer is formed over the channel layer. The first source/drain layer, the channel layer, and the second source/drain layer are patterned to form a fin-shaped structure. A gate stack is formed on a sidewall of the fin-shaped structure. The fin-shaped structure is patterned to expose a top surface of the first source/drain layer.
    Type: Application
    Filed: June 15, 2015
    Publication date: December 15, 2016
    Inventors: Chee Wee Liu, Samuel C. Pan, I-Hsieh Wong, Hung-Yu Yeh
  • Publication number: 20160358940
    Abstract: Three-dimensional (3D) transistors and methods of manufacturing thereof include a first semiconductor fin extending over a substrate. The first semiconductor fin has a vertical recess extending from a first sidewall of the first semiconductor fin toward a second sidewall of the first semiconductor fin opposite the first sidewall. A distance between two opposing sidewalls of the vertical recess decreases as the vertical recess extends toward the second sidewall of the first semiconductor fin. The device further includes a vertically recessed channel region between the second sidewall of the first semiconductor fin and a bottom of the vertical recess, source/drain (S/D) regions at opposite ends of the vertically recessed channel region, and a gate stack over the vertically recessed channel region.
    Type: Application
    Filed: June 5, 2015
    Publication date: December 8, 2016
    Inventors: Jhih-Yang Yan, Samuel C. Pan, Chee Wee Liu, Hung-Yu Yeh, Da-Zhi Zhang