Patents by Inventor Hung-Yu Zeng

Hung-Yu Zeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching method for nitride semiconductor
    Patent number: 7888270
    Abstract: The invention discloses etching method for the nitride semiconductor. Firstly dielectric layer is formed on gallium nitride. The line pattern or dot pattern is formed on the dielectric layer by using the exposure, development, and etching processes. The dielectric layer is used as the mask for the epitaxial lateral overgrowth of follow-up gallium nitride layer. The thick gallium nitride film is grown on the dielectric layer. Then the wet etching process is used to remove the dielectric layer, and the thick gallium nitride film on the dielectric layer is etched to form the specific shape as required.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: February 15, 2011
    Assignee: National Chiao Tung University
    Inventors: Wei-I Lee, Hsin-Hsiung Huang, Hung-Yu Zeng
  • Etching method for nitride semiconductor
    Publication number: 20090061636
    Abstract: The invention discloses etching method for the nitride semiconductor. Firstly dielectric layer is formed on gallium nitride. The line pattern or dot pattern is formed on the dielectric layer by using the exposure, development, and etching processes. The dielectric layer is used as the mask for the epitaxial lateral overgrowth of follow-up gallium nitride layer. The thick gallium nitride film is grown on the dielectric layer. Then the wet etching process is used to remove the dielectric layer, and the thick gallium nitride film on the dielectric layer is etched to form the specific shape as required.
    Type: Application
    Filed: September 4, 2007
    Publication date: March 5, 2009
    Applicant: National Chiao Tung University
    Inventors: Wei-I Lee, Hsin-Hsiung Huang, Hung-Yu Zeng