Abstract: A user equipment assistance information (UAI) negotiation method, for a user equipment (UE) of mobile communication includes receiving a first OtherConfig element of an RRC reconfiguration message comprising a plurality of configuration parameters with SETUP values from a network terminal; sending a first UAI including a first value of a first configuration parameter of the configuration parameters to the network terminal; and receiving a first RRC reconfiguration message corresponding to the first UAI from the network terminal.

Abstract: A p-aminobenzoic acid-producing microorganism is provided. The p-aminobenzoic acid-producing microorganism is obtained by a method for preparing a p-aminobenzoic acid-producing microorganism. The method for preparing a p-aminobenzoic acid-producing microorganism includes (a) performing an acclimation process on a source microorganism with at least one sulfonamide antibiotic to obtain at least one acclimatized microorganism and (b) screening out at least one p-aminobenzoic acid-producing microorganism from the at least one acclimatized microorganism, wherein the at least one p-aminobenzoic acid-producing microorganism has a higher p-aminobenzoic acid titer than the source microorganism.

Abstract: A microphone front chamber structure is adapted to be disposed on a front side of a voice reception hole of a microphone unit. The microphone front chamber structure includes a shell and a microphone holder. The shell has a first hole. The microphone holder is disposed in the shell and has a second hole corresponding to the first hole. The first hole and the second hole form a front chamber. The first hole has a first width at a position farthest away from the microphone holder. The second hole includes first and second sections arranged along an axis. On the axis, the first section has a tapered width along the axis and away from the shell. The second section has a second width constant along the axis. The first width is greater than the second width. A voice reception device including the microphone front chamber structure is also provided.

Abstract: A microphone front chamber structure is adapted to be disposed on a front side of a voice reception hole of a microphone unit. The microphone front chamber structure includes a shell and a microphone holder. The shell has a first hole. The microphone holder is disposed in the shell and has a second hole corresponding to the first hole. The first hole and the second hole form a front chamber. The first hole has a first width at a position farthest away from the microphone holder. The second hole includes first and second sections arranged along an axis. On the axis, the first section has a tapered width along the axis and away from the shell. The second section has a second width constant along the axis. The first width is greater than the second width. A voice reception device including the microphone front chamber structure is also provided.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A body-carried device includes a receiving bag, two carrying straps, and a heat dissipation system on the backside of the receiving bag. The heat dissipation system has a pump and an airflow guide tube unit. When a user's lower back directly contacts and pushes the pump, the air in the pump is pushed into the main tube and branch tube of the airflow guide tube unit. Some of the air exits the body-carried device through the main tube while the remainder of the air enters the heat dissipation area of the receiving bag through the branch tube. When the user's lower back moves away from the pump, the pump is elastically restored in shape to draw ambient air through the airflow guide tube unit into the pump.

Abstract: A body-carried device includes a receiving bag, two carrying straps, and a heat dissipation system on the backside of the receiving bag. The heat dissipation system has a pump and an airflow guide tube unit. When a user's lower back directly contacts and pushes the pump, the air in the pump is pushed into the main tube and branch tube of the airflow guide tube unit. Some of the air exits the body-carried device through the main tube while the remainder of the air enters the heat dissipation area of the receiving bag through the branch tube. When the user's lower back moves away from the pump, the pump is elastically restored in shape to draw ambient air through the airflow guide tube unit into the pump.

Abstract: A body-carried device includes a receiving bag, two carrying straps, and a heat dissipation system on the backside of the receiving bag. The heat dissipation system has a pump and an airflow guide tube unit. When a user's lower back directly contacts and pushes the pump, the air in the pump is pushed into the main tube and branch tube of the airflow guide tube unit. Some of the air exits the body-carried device through the main tube while the remainder of the air enters the heat dissipation area of the receiving bag through the branch tube. When the user's lower back moves away from the pump, the pump is elastically restored in shape to draw ambient air through the airflow guide tube unit into the pump.