Abstract: A package structure including a photonic, an electronic die, an encapsulant and a waveguide is provided. The photonic die includes an optical coupler. The electronic die is electrically coupled to the photonic die. The encapsulant laterally encapsulates the photonic die and the electronic die. The waveguide is disposed over the encapsulant and includes an upper surface facing away from the encapsulant. The waveguide includes a first end portion and a second end portion, the first end portion is optically coupled to the optical coupler, and the second end portion has a groove on the upper surface.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.

Abstract: A semiconductor package includes a first die stack structure and a second die stack structure, an insulating encapsulation, a redistribution structure, at least one prism structure and at least one reflector. The first die stack structure and the second die stack structure are laterally spaced apart from each other along a first direction, and each of the first die stack structure and the second die stack structure comprises an electronic die; and a photonic die electronically communicating with the electronic die. The insulating encapsulation laterally encapsulates the first die stack structure and the second die stack structure. The redistribution structure is disposed on the first die stack structure, the second die stack structure and the insulating encapsulation, and electrically connected to the first die stack structure and the second die stack structure. The at least one prism structure is disposed within the redistribution structure and optically coupled to the photonic die.

Abstract: A method of forming a silver catalyst layer in chemical plating includes providing a substrate; applying a silver-containing solution onto the substrate; and applying energy of activation to the silver-containing solution to form a silver catalyst layer over the substrate. The silver-containing solution includes silver ions, a diamine compound, a carboxylic acid compound, and a solvent. In addition, the substrate having the silver catalyst layer thereon can be immersed into a chemical plating solution to form a metal layer over the silver catalyst layer.

Abstract: A plasma treatment method is provided. The method includes generating a planar plasma in a plasma treatment chamber, observing an effective influence region of the planar plasma by using an optical observation system in which an observation lens has a transparent substrate and a fluorescent coating thereon, adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate to obtain a location and a thickness range of the effective influence region of the planar plasma, and then adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate to obtain a location and a thickness range of the effective influence region of the planar plasma. A location of a sample is adjusted to within the effective influence region, and a plasma treatment is then performed on the sample.

Abstract: A plasma treatment method is provided. The method includes generating a planar plasma in a plasma treatment chamber, observing an effective influence region of the planar plasma by using an optical observation system in which an observation lens has a transparent substrate and a fluorescent coating thereon, adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate to obtain a location and a thickness range of the effective influence region of the planar plasma, and then adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate to obtain a location and a thickness range of the effective influence region of the planar plasma. A location of a sample is adjusted to within the effective influence region, and a plasma treatment is then performed on the sample.

Abstract: A plasma treatment apparatus and a plasma treatment method are provided. The apparatus includes a chamber, a planar plasma-generating electrode, a sample suspension and holding system, and an optical observation system. The chamber defines a processing inner chamber, and the top portion of the chamber has a window. The planar plasma-generating electrode is located in the processing inner chamber for generating a planar plasma. The sample suspension and holding system is disposed opposite to the planar plasma-generating electrode in the processing inner chamber to suspend and hold a sample. The optical observation system is located in the processing inner chamber adjacent to the sample suspension and holding system to measure the thickness range of a planar plasma effective influence region through the window of the chamber.

Abstract: A plasma treatment apparatus and a plasma treatment method are provided. The apparatus includes a chamber, a planar plasma-generating electrode, a sample suspension and holding system, and an optical observation system. The chamber defines a processing inner chamber, and the top portion of the chamber has a window. The planar plasma-generating electrode is located in the processing inner chamber for generating a planar plasma. The sample suspension and holding system is disposed opposite to the planar plasma-generating electrode in the processing inner chamber to suspend and hold a sample. The optical observation system is located in the processing inner chamber adjacent to the sample suspension and holding system to measure the thickness range of a planar plasma effective influence region through the window of the chamber.

Abstract: A light-emitting device utilizing gaseous sulfur compounds is provided. This device includes a first substrate with an energy transmission coil disposed thereover, a dielectric barrier layer embedding underneath the energy transmission coil, a sealant wall circling around the dielectric barrier layer, a second substrate disposed against the first substrate and supported by the sealant wall, and a high-frequency oscillating power supply connected to the energy transmission coil. Normally the second substrate is a transparent substrate. Between the first and second substrates thereby defines an inner chamber, wherein a gaseous reactant comprising an inert gas and a sulfur-containing gas is filled. While powering up, the energy transmission coil induces an electromagnetic field within the inner chamber between the two substrates as causing decomposing/regenerating process cycles of sulfur molecules to lighting up the light-emitting device.

Abstract: A light-emitting device having an excited sulfur medium by inductively-coupled electrons is provided. This device includes a substrate, an energy transmission coil disposed over the substrate, a transparent discharge cavity disposed over the energy transmission coil, having a substantially planar top and bottom surface, and a high-frequency oscillating power supply coupled to the energy transmission coil. While power up, the energy transmission coil induces an electromagnetic field within the transparent discharge cavity of the light-emitting device. In one embodiment, the transparent discharge cavity includes a sulfur-containing medium disposed within the transparent discharge cavity, and a buffer gas or a plurality of buffer gasses filling inner space of the transparent discharge cavity.

Abstract: A light-emitting device utilizing gaseous sulfur compounds is provided. This device includes a first substrate with an energy transmission coil disposed thereover, a dielectric barrier layer embedding underneath the energy transmission coil, a sealant wall circling around the dielectric barrier layer, a second substrate disposed against the first substrate and supported by the sealant wall, and a high-frequency oscillating power supply connected to the energy transmission coil. Normally the second substrate is a transparent substrate. Between the first and second substrates thereby defines an inner chamber, wherein a gaseous reactant comprising an inert gas and a sulfur-containing gas is filled. While powering up, the energy transmission coil induces an electromagnetic field within the inner chamber between the two substrates as causing decomposing/regenerating process cycles of sulfur molecules to lighting up the light-emitting device.

Abstract: A light-emitting device having an excited sulfur medium by inductively-coupled electrons is provided. This device includes a substrate, an energy transmission coil disposed over the substrate, a transparent discharge cavity disposed over the energy transmission coil, having a substantially planar top and bottom surface, and a high-frequency oscillating power supply coupled to the energy transmission coil. While power up, the energy transmission coil induces an electromagnetic field within the transparent discharge cavity of the light-emitting device. In one embodiment, the transparent discharge cavity includes a sulfur-containing medium disposed within the transparent discharge cavity, and a buffer gas or a plurality of buffer gasses filling inner space of the transparent discharge cavity.