Abstract: A leak check is performed on a semiconductor wafer processing tool that includes a process chamber and process gas lines, and a semiconductor wafer is processed using the semiconductor wafer processing tool if the leak check passes. Each gas line includes a mass flow controller (MFC) and normally closed valves including an upstream and downstream valves upstream and downstream of the MFC. Leak checking includes: leak checking up to the downstream valves of the gas lines with the upstream valves closed and the downstream valves of the gas lines closed; and leak checking up to the upstream valve of each the process gas line with the upstream valves of the of the process gas lines closed and with the downstream valve of the of the process gas line being leak checked open and the downstream valve of every other process gas line closed.

Abstract: A connect structure for semiconductor processing equipment includes a housing configured to mate a deformable pipe with a non-deformable pipe. The housing includes a first annular sidewall to receive the deformable pipe and a second annular sidewall defining a first thread structure. An annular bead is connected to the first annular sidewall to flexibly deform the deformable pipe toward the non-deformable pipe structure when the first thread structure rotatably engages a second thread structure of the non-deformable pipe.

Abstract: A holding module of a substrate includes a cover and a ring structure. The cover includes a body portion having a step-form profile and a horizontal extending portion connecting to an edge of the body portion. The ring structure is removably installed to the horizontal extending portion, and includes a supporting structure and a cap. The supporting structure stands on the horizontal extending portion. The cap is disposed on the supporting structure, where the supporting structure is disposed between the cover and the cap. The cover and ring structure constitute an accommodating space for the substrate, and the substrate is laid on the body portion and is free from the ring structure.

Abstract: A power device comprises a speaker, an audio circuit and a control unit. The speaker comprises a first input terminal, and is configured to emit sound according to the signal received by the first input terminal. The audio circuit comprises a first output terminal, and the first output terminal is electrically coupled to the first input terminal. The audio circuit stores a plurality of audio files, and each audio file corresponds to an alert sound. Each alert sound comprises at least two pitches, and each pitch corresponds to a PWM frequency. The audio circuit is also configured to select one of the audio files according to a control command, generate a first PWM signal according to the selected audio file, and output the first PWM signal from the first output terminal. The control unit is configured to generate a corresponding control command according to a determination result.

Abstract: A power device comprises a buzzer, a control unit, and a driving circuit. The control unit records a plurality of PWM frequencies corresponding to various pitches, and is configured to generate a PWM signal according to an alert sound corresponding to a determination result, and to change the frequency of the PWM signal according to at least two pitches of the alert sound. As to the driving circuit, it is configured to drive the buzzer to emit the alert sound according to the PWM signal.

Abstract: An apparatus for performing a deposition process on a semiconductor wafer includes a chamber, a wafer holder, and a shielding structure. The chamber contains a reaction area, the wafer holder is disposed in the chamber to hold the semiconductor wafer, and the reaction area is above the semiconductor wafer. The shielding structure is disposed in the chamber and isolates an inner sidewall of the chamber from the reaction area. The shielding structure includes a base member, a first member, and a second member. The base member is disposed between the inner sidewall of the chamber and the wafer holder. The first member is disposed on the base member and is windowless. The second member is disposed on the base member and within the first member, and the second member includes a sidewall provided with a first window to transfer the semiconductor wafer.

Abstract: Z The present disclosure is directed to a transfer blade including a first end segment, a second end segment opposite to the first end segment, and an intermediate segment extending from the first end segment to the second end segment. The first end segment includes a first contact region and the second end segment includes a second contact region. The first and second contact regions are configured to contact locations of a surface of a workpiece that do not overlap or are not aligned with a sensitive area of the workpiece. The sensitive area of the workpiece may be an EUV frame or a reticle of the workpiece. A non-contact region extends continuously along the first end segment, the intermediate segment, and the second end segment, and the non-contact region overlaps the sensitive area of the workpiece and is spaced apart from the sensitive area of the workpiece.

Abstract: A wafer transfer tool has a mounting end portion and a blade connected to and extending from the mounting end portion. The blade has a bottom exterior and a top exterior having a support configuration. The support configuration has a center point and steps having treads with inner edges. The treads are located in different levels in a direction of a thickness of the blade between the top exterior and the bottom exterior, wherein there are one or more of the treads at each level and wherein at least some of the inner edges have at least one of circular shapes or partially circular shapes.

Abstract: A wearable system comprising a first wearable device is disclosed. The first wearable device comprises: an enclosed outer ring; a first adjustable structure, configured to adjust an internal wearing space of the first wearable device while a length of the enclosed outer ring is fixed, wherein a user puts a first body portion thereof in the internal wearing space; a first light source, configured to emit first light toward the internal wearing space; a first PPG sensor, configured to detect a first PPG signal generated according to the first light; a first pressure sensor, configured to sense a pressure caused by the first body portion. A related blood pressure measurement method is also disclosed. Via the disclosed system and method, the blood pressure may be easily measured by wearable devices. Additionally, the wearable device does not need to be frequently calibrated based on the measurement of the sphygmomanometer.

Abstract: There is provided a ring-type electrodermal activity measurement device including a first electrode, a second electrode and a sensor chip. The first electrode is for contacting a first skin of a first finger, and for receiving a first voltage. The second electrode is for contacting a second skin of a second finger, different from the first finger, and for receiving a second voltage. The sensor chip is coupled to the first electrode and the second electrode, and is to measure a voltage variation of a skin area between the first electrode and the second electrode to detect the electrodermal activity.

Abstract: A wearable device with a blood oxygen measurement function, comprising: at least one light source, configured to emit light; an optical sensor, configured to sense an optical signal generated according to reflected light of the light; a pressure sensor, configured to sense a pressure provided by a user wearing the wearable device; a processing circuit, configured to calibrate the optical signal to generate a calibrated optical signal, and configured to compute a blood oxygen level according to the calibrated optical signal; and a pressure adjusting structure, configured to adjust an internal wearing space of the wearable device, wherein the pressure changes corresponding to the internal wearing space. A blood oxygen measurement method which the wearable device can use is also disclosed. Thereby the optical signal may be calibrated corresponding to the state of the wearable device. By this way, the blood oxygen measurement may be more accurate.

Abstract: A connect structure for semiconductor processing equipment includes a housing configured to mate a deformable pipe with a non-deformable pipe. The housing includes a first annular sidewall to receive the deformable pipe and a second annular sidewall defining a first thread structure. An annular bead is connected to the first annular sidewall to flexibly deform the deformable pipe toward the non-deformable pipe structure when the first thread structure rotatably engages a second thread structure of the non-deformable pipe.

Abstract: A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber.

Abstract: Methods of forming a semiconductor device structure are described. The method includes forming a first conductive feature including a conductive fill material over a substrate, forming an etch stop layer on the conductive fill material, forming an intermetallization dielectric on the etch stop layer, forming an opening in the etch stop layer and the intermetallization dielectric to expose a portion of the conductive fill material, forming a recess in the exposed portion of the conductive fill material, and the opening and the recess together form a rivet-shaped space. The method further includes forming a second conductive feature in the rivet-shaped space and forming a metal nitride layer over the intermetallization dielectric and the second conductive feature. The forming the metal nitride layer includes depositing the metal nitride layer and treating the metal nitride layer with a plasma treatment process.

Abstract: A power device comprises a speaker, an audio circuit and a control unit. The speaker comprises a first input terminal, and is configured to emit sound according to the signal received by the first input terminal. The audio circuit comprises a first output terminal, and the first output terminal is electrically coupled to the first input terminal. The audio circuit stores a plurality of audio files, and each audio file corresponds to an alert sound. Each alert sound comprises at least two pitches, and each pitch corresponds to a PWM frequency. The audio circuit is also configured to select one of the audio files according to a control command, generate a first PWM signal according to the selected audio file, and output the first PWM signal from the first output terminal. The control unit is configured to generate a corresponding control command according to a determination result.

Abstract: A power device comprises a buzzer, a control unit, and a driving circuit. The control unit records a plurality of PWM frequencies corresponding to various pitches, and is configured to generate a PWM signal according to an alert sound corresponding to a determination result, and to change the frequency of the PWM signal according to at least two pitches of the alert sound. As to the driving circuit, it is configured to drive the buzzer to emit the alert sound according to the PWM signal.

Abstract: A wafer storage elevator and method for detecting wafer position shift. The elevator includes a first storage elevator sidewall, a second storage elevator sidewall, and a storage seat positioned between the first and second storage elevator sidewalls. A first mirror block is coupled to a front side of the storage seat having a mirror positioned on a top surface of the block, and a second mirror block is coupled to the front side of the storage seat having a mirror that is positioned on the top surface of the second mirror block. The mirror of the first mirror block reflects a laser beam from an emission sensor to the second mirror block, and the mirror of the second mirror block reflects the laser beam from the mirror of the first mirror block to a receive sensor. A wafer misalignment is determined based upon an output of the receive sensor.

Abstract: A substrate processing device is provided, including a processing chamber and a substrate carrying unit. The substrate carrying unit is disposed in the processing chamber. The substrate carrying unit includes a vacuum chuck, a shaft part and a driving part. The vacuum chuck adsorbs and holds a substrate through a vacuum suction. The shaft part has a rotation axis, and the shaft part is configured to support the vacuum chuck. The driving part is configured to drive the vacuum chuck and the shaft part to rotate around the rotation axis, wherein the vacuum chuck has a plurality of channels with different apertures inside, and the vacuum pressures in the channels are controlled by the size of the apertures so that the substrate is adsorbed on the vacuum chuck.

Abstract: A wafer storage elevator and method for detecting wafer position shift. The elevator includes a first storage elevator sidewall, a second storage elevator sidewall, and a storage seat positioned between the first and second storage elevator sidewalls. A first mirror block is coupled to a front side of the storage seat having a mirror positioned on a top surface of the block, and a second mirror block is coupled to the front side of the storage seat having a mirror that is positioned on the top surface of the second mirror block. The mirror of the first mirror block reflects a laser beam from an emission sensor to the second mirror block, and the mirror of the second mirror block reflects the laser beam from the mirror of the first mirror block to a receive sensor. A wafer misalignment is determined based upon an output of the receive sensor.

Abstract: A system and method for cleaning a preclean process chamber in between wafer processing. The internal pressure of the preclean process chamber is reduced to a first pressure and a first gas that consists of oxygen and an inert or noble gas, is introduced into the chamber. Plasma is generated within the preclean process chamber using the first gas at the first pressure. Internal pressure is then reduced to a second pressure, less than the first, and the first gas is continued into the chamber. Plasma is then generated using the first gas at the second pressure. Thereafter, a second gas, consisting of an oxygen-free inert or noble gas, is introduced into the chamber at the second pressure, following which plasma is generated within the chamber using only the second gas.