Patents by Inventor Hung-Jin Kim

Hung-Jin Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile semiconductor memory device and fabricating method thereof
    Patent number: 6809966
    Abstract: The present invention relates to a non-volatile semiconductor memory device and a fabricating method thereof, which prevents a programming disturbance and enables to have a programming operated by a byte unit by achieving a programming and an erasing of a memory device through a F-N tunneling.
    Type: Grant
    Filed: September 2, 2003
    Date of Patent: October 26, 2004
    Assignee: LG Electronics, Inc.
    Inventor: Hung-Jin Kim
  • Non-volatile semiconductor memory device and fabricating method thereof
    Publication number: 20040041203
    Abstract: The present invention relates to a non-volatile semiconductor memory device and a fabricating method thereof, which prevents a programming disturbance and enables to have a programming operated by a byte unit by achieving a programming and an erasing of a memory device through a F-N tunneling.
    Type: Application
    Filed: September 2, 2003
    Publication date: March 4, 2004
    Applicant: Hynix Semiconductor Inc.
    Inventor: Hung-Jin Kim
  • Method of manufacturing non-volatile semiconductor memory device
    Patent number: 6635531
    Abstract: The present invention relates to a non-volatile semiconductor memory device and a fabricating method thereof, which prevents a programming disturbance and enables to have a programming operated by a byte unit by achieving a programming and an erasing of a memory device through a F-N tunneling.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: October 21, 2003
    Assignee: Hynix Semiconductor Inc.
    Inventor: Hung-Jin Kim
  • Non-volatile semiconductor memory device
    Patent number: 6501124
    Abstract: The present invention relates to a non-volatile semiconductor memory device and a fabricating method thereof, which prevents a programming disturbance and enables to have a programming operated by a byte unit by achieving a programming and an erasing of a memory device through a F-N tunneling.
    Type: Grant
    Filed: May 24, 2001
    Date of Patent: December 31, 2002
    Assignee: Hynix Semiconductor Inc.
    Inventor: Hung-Jin Kim
  • Non-volatile semiconductor memory device and fabricating method thereof
    Publication number: 20020179965
    Abstract: The present invention relates to a non-volatile semiconductor memory device and a fabricating method thereof, which prevents a programming disturbance and enables to have a programming operated by a byte unit by achieving a programming and an erasing of a memory device through a F-N tunneling.
    Type: Application
    Filed: July 17, 2002
    Publication date: December 5, 2002
    Applicant: Hynix Semiconductor Inc.
    Inventor: Hung-Jin Kim
  • Non-volatile semiconductor memory device and fabricating method thereof
    Publication number: 20020018364
    Abstract: The present invention relates to a non-volatile semiconductor memory device and a fabricating method thereof, which prevents a programming disturbance and enables to have a programming operated by a byte unit by achieving a programming and an erasing of a memory device through a F—N tunneling.
    Type: Application
    Filed: May 24, 2001
    Publication date: February 14, 2002
    Applicant: Hynix Semiconductor Inc.
    Inventor: Hung-Jin Kim