Abstract: A method of forming a semiconductor device and the structure of the semiconductor device are provided. The manufacturing method includes the following steps of: providing a native substrate; sequentially forming a first nucleation layer, a thick GaN substrate layer, a second nucleation layer, an AlGaN barrier layer, a GaN channel layer and a leakage current stop layer; forming an aperture area through the leakage current stop layer; forming a GaN buffer layer; implanting Mg ions to the GaN buffer layer to form a current blocking layer; forming a GaN drift layer; forming a metallic interlayer on the GaN drift layer and transferring the GaN drift layer on a transferred substrate through the metallic interlayer; removing a semiconductor stack; forming a source contact, a gate contact and a drain contact.

Abstract: A semiconductor device is provided and includes a thermal conductive substrate, a nucleation layer, a buffer layer, a field-effect transistor, and a cap layer. The thermal conductive substrate is a semiconductor wafer embedded with a plurality of via-holes filled with a thermal conductive material. The nucleation layer disposed on the thermal conductive substrate. The buffer layer disposed on the nucleation layer. The field-effect transistor disposed on the buffer layer, comprising a superlattice stack, wherein the superlattice stack comprises a first superlattice stacked layers and a second superlattice stacked layers attached thereon. The cap layer disposed on the field-effect transistor.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a nucleation layer, a buffer layer, a superlattice stack, a cap layer, a first transistor area and a second transistor area. The first superlattice stacked layers form a two dimensional electron gas carrier transport to generate a first current channels group and the second superlattice stacked layers forming a two dimensional hole gas carrier transport at different depths to generate a second current channels group. The first transistor area has a first depth contacted to the first superlattice stacked layers. The second transistor area has a second depth contacted to the second superlattice stacked layers. The first transistor area controls the first current channels group and the second current channels group, and the second transistor area controls the second current channels group.

Abstract: A light emitting diode device comprises the transparent conductive layer is formed on the conductive substrate, the p-type semiconductor layer is formed on the transparent conductive layer, the active layer is formed on the p-type semiconductor layer, and the n-type semiconductor layer is formed on the active layer, the buffer layer is formed on the n-type semiconductor layer, and a metal electrode is formed on a rough and uneven surface of the buffer layer, in which the electrical property of the n-type semiconductor layer is opposites to that of the p-type semiconductor layer. The reflective effect within the light emitting diode device can be increased. In addition, by reducing the thickness of the undoped GaN layer, the absorption of ultraviolet light inside the components of the light emitting diode device can be reduced.

Abstract: The present invention provides a method of super flat chemical mechanical polishing (SF-CMP) technology, which is a method characterized in replacing laser lift-off in a semiconductor fabricating process. SF-CMP has a main step of planting a plurality of polishing stop points before polishing the surface, which is characterized by hardness of the polishing stop points material being larger than hardness of the surface material. Therefore, the present method can achieve super flat polishing surface without removing polishing stop points.

Abstract: A method of making quasi-vertical light emitting devices includes growing semiconductor layers on a growth substrate and etching the semiconductor layers to produce device isolation trenches forming separable semiconductor devices and holes. Blind holes are drilled in the substrate at the location of each of the holes in the semiconductor layers. The drilling of the blind holes defines blind hole walls and a blind hole end in each of the blind holes. N-semiconductor metal is deposited in each of the blind holes. An n-electrode contact is formed in each of the blind holes by plating each of the blind holes with an n-electrode metal connected to the n-semiconductor metal. The substrate is thinned to expose the n-electrode metal as an n-electrode. Bonding metal is deposited to the n-electrode for packaging.

Abstract: A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.

Abstract: A quasi-vertical light emitting device is provided. According to one embodiment of the present invention, the quasi-vertical light emitting diode includes a sapphire substrate; a plurality of semiconductor layers grown on the sapphire substrate, the plurality of semiconductor layers including an n-GaN layer, an active layer, and a p-GaN layer; a plurality of holes etched in the plurality of semiconductor layers, each of the plurality of holes etched to the sapphire substrate, and a plurality of sapphire holes in the sapphire substrate, each of the plurality of holes aligned with one of the plurality of sapphire holes to form hole walls, the hole walls and bottom deposited with an n-metal and each of the plurality of holes filled with another metal to form a n-electrode contact; an n-mesa in the active layer and the p-GaN layer, the n-mesa deposited with an n-metal and a passivation layer grown over the n-metal; and a p-metal layer deposited on the p-GaN layer, and a p-electrode bonded to the p-metal.

Abstract: A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.

Abstract: A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.

Abstract: A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

Abstract: A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

Abstract: A light emitting diode device includes a multi-layer stack of materials including a p-layer, a n-layer, and a light generating region for emission of light in a primary emission direction towards one of the p- and n-layers; a substantially transparent layer located at or adjacent said one of the p- and n-layers, having a first surface facing said one of the p- and n-layers and an opposed second surface; and a reflective surface formed at or adjacent the second surface of the transparent layer for directing at least a portion of the emitted light in a direction away from the primary emission direction so as to enhance light emission from a side of the light emitting diode device.

Abstract: A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.

Abstract: The present invention relates to a method of forming a two-dimensional pattern, which includes: dispersing a plurality of spheres on a substrate; using the spheres to form a mask on the substrate; etching the substrate; and removing the mask from the substrate. In addition, the present invention further relates to a method of processing a surface of a substrate, which includes: dispersing a plurality of spheres on the surface of the substrate; depositing a substance among the spheres; and removing the spheres to leave the deposited substance on the surface of the substrate. The method of the present invention achieves a quicker and simpler process with a lower cost. In addition, a light emitting device manufactured through the method of the present invention has preferred light extraction efficiency and a variable radiation field pattern.

Abstract: The present invention provides a method of super flat chemical mechanical polishing (SF-CMP) technology, which is a method characterized in replacing laser lift-off in a semiconductor fabricating process. SF-CMP has a main step of planting a plurality of polishing stop points before polishing the surface, which is characterized by hardness of the polishing stop points material being larger than hardness of the surface material. Therefore, the present method can achieve super flat polishing surface without removing polishing stop points.

Abstract: A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

Abstract: An LED device includes a multi-layer stack of materials having a p-layer, an n-layer, and a p-n junction for emission of light. The LED device further includes a p-electrode and an n-electrode for electrical connection between the respective p-layer and n-layer with an AC power source, and a capacitor located between one of the p-layer and n-layer and its respective electrode.

Abstract: A light source for a lighting device has a reflector for receiving one or more light emitting diode devices. The reflector has reflective sides and a light exit. There is a side emitting LED device located in the reflector such that its primary light emitting direction towards the reflective sides such that light emitted from the LED device are reflected towards the light exit.

Abstract: A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.