Patents by Inventor Hunter J. Martinez

Hunter J. Martinez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a semiconductor layer
    Patent number: 7972922
    Abstract: A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: July 5, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Hunter J. Martinez, John J. Hackenberg, Jill Hildreth, Ross E. Noble
  • METHOD OF FORMING A SEMICONDUCTOR LAYER
    Publication number: 20100129952
    Abstract: A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.
    Type: Application
    Filed: November 21, 2008
    Publication date: May 27, 2010
    Inventors: Hunter J. Martinez, John J. Hackenberg, Jill Hildreth, Ross E. Noble