Abstract: An electronic device includes an operating system to determine hardware modules being used when an application of the electronic device is run. The electronic device stores a table recording hardware modules used by the running of each application obtained from a creditable service provider. The electronic device obtains the hardware modules being used by the operating system when an application is running, determines whether all the hardware modules being used are the hardware modules corresponding to the running application in the table if the running application is recorded in the table, and determines that the running application is a malicious application if not all of the hardware modules being used are the hardware modules corresponding to the running application in the table. The electronic device executes a safeguard operation to protect the electronic device when the running application is a malicious application. A related method is also provided.

Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

Abstract: An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.