Patents by Inventor Huong Chung

Huong Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7045467
    Abstract: A method of determining the endpoint of an etch layer in a semiconductor element fabrication, wherein said element is comprised of at least a first material layer, a second material layer on said first material layer, said endpoint determining method comprises the steps of (i) determining the total emission intensity wavelength of the first material layer; (ii) determining the total emission intensity wavelength of the second material layer; (iii) plotting the scalar of the wavelength differential of the upper and lower layers; and (iv) choosing the highest peak of wavelength differential as the best range of endpoint detection wavelength. This method is particularly useful for etching stacks where the first and second material layers have endpoint emission wavelengths that are close to each other. This include nitrogen-rich silicon layer which is overlaid by an antireflective coating (ARC) layer, e.g. silicon nitride, Si3N4 overlaid by bottom antireflective coating (BARC).
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: May 16, 2006
    Assignee: 1st Silicon(Malaysia) Sdn Bnd
    Inventor: Huong Chung Yew
  • Patent number: 6939321
    Abstract: A balloon catheter and a method of making the balloon catheter, having a balloon which is bonded to an elongated shaft, and which has a first layer and a second layer and an improved strong bond between the balloon and the shaft. One aspect of the invention is directed to a balloon in which the balloon first layer has at least a section with a gas plasma-etched or chemical solution-etched surface for improved bondability. Another aspect of the invention is directed to a balloon in which the balloon first layer has a proximal end section bonded to an outer surface of the shaft and the balloon second layer has a proximal end section bonded to an inner surface of the shaft, and, in one embodiment, at least a section of the balloon first layer has a gas plasma-etched or chemical solution-etched surface.
    Type: Grant
    Filed: September 26, 2002
    Date of Patent: September 6, 2005
    Assignee: Advanced Cardiovascular Systems, Inc.
    Inventors: Edwin Wang, Florencia Lim, Huong Chung, Chi Le Long, Nadine Ding
  • Publication number: 20040266198
    Abstract: A method of determining the endpoint of an etch layer in a semiconductor element fabrication, wherein said element is comprised of at least a first material layer, a second material layer on said first material layer, said endpoint determining method comprises the steps of (i) determining the total emission intensity wavelength of the first material layer; (ii) determining the total emission intensity wavelength of the second material layer; (iii) plotting the scalar of the wavelength differential of the upper and lower layers; and (iv) choosing the highest peak of wavelength differential as the best range of endpoint detection wavelength.
    Type: Application
    Filed: June 27, 2003
    Publication date: December 30, 2004
    Inventor: Huong Chung Yew
  • Publication number: 20040062890
    Abstract: A balloon catheter and a method of making the balloon catheter, having a balloon which is bonded to an elongated shaft, and which has a first layer and a second layer and an improved strong bond between the balloon and the shaft. One aspect of the invention is directed to a balloon in which the balloon first layer has at least a section with a gas plasma-etched or chemical solution-etched surface for improved bondability. Another aspect of the invention is directed to a balloon in which the balloon first layer has a proximal end section bonded to an outer surface of the shaft and the balloon second layer has a proximal end section bonded to an inner surface of the shaft, and, in one embodiment, at least a section of the balloon first layer has a gas plasma-etched or chemical solution-etched surface.
    Type: Application
    Filed: September 26, 2002
    Publication date: April 1, 2004
    Inventors: Edwin Wang, Florencia Lim, Huong Chung, Chi Le Long, Ni Ding