Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.