Abstract: There is a method for making a high-performance opto-electronic device on an amorphous substrate. The method includes growing on a single-crystal substrate, a single-crystal, oxide film; applying a first chemical processing to the single-crystal, oxide film to obtain a first transferrable, single-crystal, chalcogenide film; transferring the transferrable, single crystal, chalcogenide film from the single-crystal substrate to an amorphous substrate or polycrystalline metal substrate; applying a second chemical processing to the transferrable, single-crystal, chalcogenide film to obtain a single-crystal, non-oxide film, wherein the single-crystal, non-oxide film is different from the transferrable, single-crystal, chalcogenide film; and growing a wide-bandgap semiconductor film using the single-crystal, non-oxide film as a seeding layer to obtain the opto-electronic device on the amorphous glass or polycrystalline metal substrate. The first chemical processing is different from the second chemical processing.

Abstract: There is a viscoelastic strain sensor that includes a sensing layer including a viscoelastic material, the viscoelastic material including a viscoelastic hydrogel and a conductive nanofiller. The viscoelastic material has a fractional resistance change that increases with an increase of an applied tensile strain, and the viscoelastic material has a fractional resistance change that decreases with an applied compressional strain.

Abstract: A zinc ion battery includes a cathode; an anode; a separator; and an electrolyte sandwiched between the cathode and the anode. The electrolyte includes a mixture of zinc perchlorate and sodium perchlorate, and a ratio of the sodium perchlorate to zinc perchlorate is at least 30.

Abstract: There is a method for forming a three dimensional or porous graphene electrode pattern on a substrate, the method including providing a substrate; coating the substrate with a lignin-polymer composite film; exposing a first part of the coated lignin-polymer composite film to a laser beam for transforming the first part into the graphene pattern; and removing a second part of the coated lignin-polymer composite film, which was not exposed to the laser beam, by placing the second part in water. The lignin-polymer composite film includes (1) a water-soluble alkaline lignin, (2) a polymer having bonding properties, and (3) a solvent, and an amount of the water-soluble alkaline lignin in the lignin-polymer composite film is between 5 and 60% by weight.

Abstract: A method for making a metal-organic framework, MOF, as nanosheets, includes providing a MXene, wherein the MXene has a general formula of Mn+1XnTx, with n=1-3, M represents an early transition metal, X is C and/or N, and Tx is surface terminations; providing a ligand; mixing the MXene and the ligand in a vessel; heating the MXene and the ligand in the vessel; and forming the MX-MOF nanosheets. The MX-MOF nanosheets have a thickness less than 10 nm.

Abstract: There is a method for forming a three dimensional or porous graphene electrode pattern on a substrate, the method including providing a substrate; coating the substrate with a lignin-polymer composite film; exposing a first part of the coated lignin-polymer composite film to a laser beam for transforming the first part into the graphene pattern; and removing a second part of the coated lignin-polymer composite film, which was not exposed to the laser beam, by placing the second part in water. The lignin-polymer composite film includes (1) a water-soluble alkaline lignin, (2) a polymer having bonding properties, and (3) a solvent, and an amount of the water-soluble alkaline lignin in the lignin-polymer composite film is between 5 and 60% by weight.

Abstract: An electrical power generator includes an M-gel layer that includes MXene and a hydrogel, first and second flexible layers that sandwich the M-gel layer so that the M-gel layer is sealed from an ambient, and a single terminal electrically connected to the M-gel layer. The M-gel layer is configured to transform acoustic energy into electrical energy.

Abstract: There is a method for forming a three dimensional or porous graphene electrode pattern on a substrate, the method including providing a substrate; coating the substrate with a lignin-polymer composite film; exposing a first part of the coated lignin-polymer composite film to a laser beam for transforming the first part into the graphene pattern; and removing a second part of the coated lignin-polymer composite film, which was not exposed to the laser beam, by placing the second part in water. The lignin-polymer composite film includes (1) a water-soluble alkaline lignin, (2) a polymer having bonding properties, and (3) a solvent, and an amount of the water-soluble alkaline lignin in the lignin-polymer composite film is between 5 and 60% by weight.

Abstract: There is a viscoelastic strain sensor that includes a sensing layer including a viscoelastic material, the viscoelastic material including a viscoelastic hydrogel and a conductive nanofiller. The viscoelastic material has a fractional resistance change that increases with an increase of an applied tensile strain, and the viscoelastic material has a fractional resistance change that decreases with an applied compressional strain.

Abstract: An osmotic energy conversion system includes a housing having a first inlet and a second inlet, an MXene lamellar membrane located inside the housing and configured to divide the housing into a first chamber and a second chamber, and first and second electrodes placed in the first and second chambers, respectively, and configured to collect electrical energy generated by a salinity-gradient formed by first and second liquids across the MXene lamellar membrane. The first chamber is configured to receive the first liquid at the first inlet and the second chamber is configured to receive the second liquid at the second inlet. The first liquid has a salinity lower than the second liquid, and the MXene lamellar membrane includes plural nanosheets of MXene stacked on top of each other.

Abstract: An osmotic energy conversion system includes a housing having a first inlet and a second inlet, an MXene lamellar membrane located inside the housing and configured to divide the housing into a first chamber and a second chamber, and first and second electrodes placed in the first and second chambers, respectively, and configured to collect electrical energy generated by a salinity-gradient formed by first and second liquids across the MXene lamellar membrane. The first chamber is configured to receive the first liquid at the first inlet and the second chamber is configured to receive the second liquid at the second inlet. The first liquid has a salinity lower than the second liquid, and the MXene lamellar membrane includes plural nanosheets of MXene stacked on top of each other.

Abstract: An electrode includes a substrate and a composite arranged on the substrate. The composite includes MXene and Prussian blue.

Abstract: A semiconductor device includes a substrate, a gate arranged on the substrate, a dielectric arranged on the gate, a channel arranged on the dielectric, a source electrically coupled to the channel, and a drain electrically coupled to the channel. Each of the gate, dielectric, channel, source, and drain includes a corresponding mixture of hafnium dioxide (HfCte) and zinc oxide (ZnO) layers and at least two of the gate, dielectric, channel, source, and drain comprise different mixtures of the hafnium dioxide and zinc oxide layers.

Abstract: There is a method for forming an oxide or chalcogenide 2D semiconductor. The method includes a step of growing on a substrate, by a deposition method, a precursor epitaxy oxide or chalcogenide film; and a step of sulfurizing the precursor epitaxy oxide or chalcogenide film, by replacing the oxygen atoms with sulfur atoms, to obtain the oxide or chalcogenide 2D semiconductor. The oxide or chalcogenide 2D semiconductor has an epitaxy structure inherent from the precursor epitaxy oxide or chalcogenide film.

Abstract: A semiconductor device includes a substrate, a gate arranged on the substrate, a dielectric arranged on the gate, a channel arranged on the dielectric, a source electrically coupled to the channel, and a drain electrically coupled to the channel. Each of the gate, dielectric, channel, source, and drain includes a corresponding mixture of hafnium dioxide (HfCte) and zinc oxide (ZnO) layers and at least two of the gate, dielectric, channel, source, and drain comprise different mixtures of the hafnium dioxide and zinc oxide layers.

Abstract: Embodiments of the present disclosure provide a device including an on-chip electrode platform including one or more three dimensional laser scribed graphene electrodes, methods of making the on-chip electrode platform, methods of analyzing (e.g., detecting, quantifying, and the like) chemicals and biochemicals, and the like.

Abstract: Exemplary embodiments provide methods and structures for controlling work function values of dual metal gate electrodes for transistor devices. Specifically, the work function value of one of the PMOS and NMOS metal gate electrodes can be controlled by a reaction between stacked layers deposited on a gate dielectric material. The stacked layers can include a first-metal-containing material such as Al2O3, and/or AlN overlaid by a second-metal-containing material such as TaN, TiN, WN, MoN or their respective metals. The reaction between the stacked layers can create a metal gate material with a desired work function value ranging from about 4.35 eV to about 5.0 eV. The disclosed methods and structures can be used for CMOS transistors including MOSFET devices formed on a bulk substrate, and planar FET devices or 3-D MuGFET devices (e.g., FinFET devices) formed upon the oxide insulator of a SOI.

Abstract: Exemplary embodiments provide methods and structures for controlling work function values of dual metal gate electrodes for transistor devices. Specifically, the work function value of one of the PMOS and NMOS metal gate electrodes can be controlled by a reaction between stacked layers deposited on a gate dielectric material. The stacked layers can include a first-metal-containing material such as Al2O3, and/or AlN overlaid by a second-metal-containing material such as TaN, TiN, WN, MoN or their respective metals. The reaction between the stacked layers can create a metal gate material with a desired work function value ranging from about 4.35 eV to about 5.0 eV. The disclosed methods and structures can be used for CMOS transistors including MOSFET devices formed on a bulk substrate, and planar FET devices or 3-D MuGFET devices (e.g., FinFET devices) formed upon the oxide insulator of a SOI.

Abstract: In accordance with the invention, there are CMOS devices and semiconductor devices and methods of fabricating them. The CMOS device can include a substrate including a first active region and a second active region and a first transistor device over the first active region, wherein the first transistor device includes a high-K layer over the first active region, a first dielectric capping layer on the high-K layer, and a first metal gate layer over the first dielectric capping layer. The CMOS device can also include a second transistor device over the second active region, wherein the second transistor device includes a high-K layer over the second active region, a second dielectric capping layer on the second high-K layer, and a second metal gate layer over the second dielectric capping layer.