Patents by Inventor Hussain H. Ladhani
Hussain H. Ladhani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11316481Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.Type: GrantFiled: July 27, 2020Date of Patent: April 26, 2022Assignee: NXP USA, Inc.Inventors: Hussain H. Ladhani, Gerard J. Bouisse, Jeffrey K. Jones
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Publication number: 20200382075Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.Type: ApplicationFiled: July 27, 2020Publication date: December 3, 2020Inventors: Hussain H. Ladhani, Gerard J. Bouisse, Jeffrey K. Jones
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Patent number: 10771019Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and at least one decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, and a current electrode for providing an RF output signal at an output terminal. A decoupling circuit is coupled between the control electrode and a ground terminal, and/or between the current electrode and the ground terminal. The decoupling circuit includes a resistor coupled in series with components of a resonant circuit having a resonance that is lower than an RF frequency (e.g., lower than 20 megahertz). The resistor is for dampening the resonance of the resonant circuit.Type: GrantFiled: January 23, 2019Date of Patent: September 8, 2020Assignee: NXP USA, Inc.Inventors: Hussain H. Ladhani, Gerard J. Bouisse, Jeffrey K. Jones
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Publication number: 20190173434Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and at least one decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, and a current electrode for providing an RF output signal at an output terminal. A decoupling circuit is coupled between the control electrode and a ground terminal, and/or between the current electrode and the ground terminal. The decoupling circuit includes a resistor coupled in series with components of a resonant circuit having a resonance that is lower than an RF frequency (e.g., lower than 20 megahertz). The resistor is for dampening the resonance of the resonant circuit.Type: ApplicationFiled: January 23, 2019Publication date: June 6, 2019Inventors: Hussain H. LADHANI, Gerard J. BOUISSE, Jeffrey K. JONES
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Patent number: 10199991Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.Type: GrantFiled: August 10, 2017Date of Patent: February 5, 2019Assignee: NXP USA, INC.Inventors: Hussain H. Ladhani, Gerard J. Bouisse, Jeffrey K. Jones
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Patent number: 10153738Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.Type: GrantFiled: August 10, 2017Date of Patent: December 11, 2018Assignee: NXP USA, INC.Inventors: Hussain H. Ladhani, Gerard J. Bouisse, Jeffrey K. Jones
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Publication number: 20170366141Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.Type: ApplicationFiled: August 10, 2017Publication date: December 21, 2017Inventors: Hussain H. LADHANI, Gerard J. BOUISSE, Jeffrey K. JONES
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Publication number: 20170338778Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.Type: ApplicationFiled: August 10, 2017Publication date: November 23, 2017Inventors: Hussain H. LADHANI, Gerard J. BOUISSE, Jeffrey K. JONES
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Patent number: 9800208Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.Type: GrantFiled: February 16, 2016Date of Patent: October 24, 2017Assignee: NXP USA, INC.Inventors: Mahesh K. Shah, Jerry L. White, Li Li, Hussain H. Ladhani, Audel A. Sanchez, Lakshminarayan Viswanathan, Fernando A. Santos
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Patent number: 9762185Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.Type: GrantFiled: November 16, 2015Date of Patent: September 12, 2017Assignee: NXP USA, INC.Inventors: Hussain H. Ladhani, Gerard J. Bouisse, Jeffrey K. Jones
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Patent number: 9692373Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.Type: GrantFiled: March 11, 2016Date of Patent: June 27, 2017Assignee: NXP USA, INC.Inventors: Joseph Staudinger, Maruf Ahmed, Hussain H. Ladhani
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Patent number: 9531328Abstract: An embodiment of a packaged radio frequency (RF) amplifier device includes a transistor and an inverse class-F circuit configured to harmonically terminate the device. The transistor has a control terminal and first and second current carrying terminals. The control terminal is coupled to an input lead of the device, and the first current carrying terminal is coupled to a voltage reference. The inverse class-F circuit is coupled between the second current carrying terminal and an output lead. The inverse class-F circuit includes a shunt circuit coupled between a cold point node and the voltage reference, where the cold point node corresponds to a second harmonic frequency cold point for the device. The shunt circuit adds a shunt negative susceptance at a fundamental frequency F0 to the inverse class-F circuit.Type: GrantFiled: December 16, 2014Date of Patent: December 27, 2016Assignee: NXP USA, INC.Inventors: Jeffrey A. Frei, Enver Krvavac, Hussain H. Ladhani
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Patent number: 9484222Abstract: A semiconductor device, related package, and method of manufacturing same are disclosed. In at least one embodiment, the semiconductor device includes a radio frequency (RF) power amplifier transistor having a first port, a second port, and a third port. The semiconductor device also includes an output lead, a first output impedance matching circuit between the second port and the output lead, and a first additional circuit coupled between the output lead and a ground terminal. At least one component of the first additional circuit is formed at least in part by way of one or more of a plurality of castellations and a plurality of vias.Type: GrantFiled: February 19, 2014Date of Patent: November 1, 2016Assignee: FREESCALE SEMICONDUCTOR, INC.Inventors: Hussain H. Ladhani, Lu Li, Mahesh K. Shah, Lakshminarayan Viswanathan, Michael E. Watts
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Publication number: 20160197589Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Applicant: FREESCALE SEMICONDUCTOR INC.Inventors: JOSEPH STAUDINGER, MARUF AHMED, HUSSAIN H. LADHANI
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Publication number: 20160173039Abstract: An embodiment of a packaged radio frequency (RF) amplifier device includes a transistor and an inverse class-F circuit configured to harmonically terminate the device. The transistor has a control terminal and first and second current carrying terminals. The control terminal is coupled to an input lead of the device, and the first current carrying terminal is coupled to a voltage reference. The inverse class-F circuit is coupled between the second current carrying terminal and an output lead. The inverse class-F circuit includes a shunt circuit coupled between a cold point node and the voltage reference, where the cold point node corresponds to a second harmonic frequency cold point for the device. The shunt circuit adds a shunt negative susceptance at a fundamental frequency F0 to the inverse class-F circuit.Type: ApplicationFiled: December 16, 2014Publication date: June 16, 2016Inventors: JEFFREY A. FREI, ENVER KRVAVAC, HUSSAIN H. LADHANI
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Publication number: 20160164471Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.Type: ApplicationFiled: February 16, 2016Publication date: June 9, 2016Applicant: Freescale Semiconductor, Inc.Inventors: Mahesh K. SHAH, Jerry L. WHITE, Li LI, Hussain H. LADHANI, Audel A. SANCHEZ, Lakshminarayan VISWANATHAN, Fernando A. SANTOS
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Patent number: 9319010Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.Type: GrantFiled: December 16, 2014Date of Patent: April 19, 2016Assignee: FREESCALE SEMICONDUCTOR INC.Inventors: Joseph Staudinger, Maruf Ahmed, Hussain H. Ladhani
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Patent number: 9300254Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.Type: GrantFiled: June 26, 2014Date of Patent: March 29, 2016Assignee: FREESCALE SEMICONDUCTOR INC.Inventors: Mahesh K. Shah, Jerry L. White, Li Li, Hussain H. Ladhani, Audel A. Sanchez, Lakshminarayan Viswanathan, Fernando A. Santos
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Publication number: 20160072451Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.Type: ApplicationFiled: November 16, 2015Publication date: March 10, 2016Inventors: HUSSAIN H. LADHANI, GERARD J. BOUISSE, JEFFREY K. JONES
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Publication number: 20150381117Abstract: An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.Type: ApplicationFiled: June 26, 2014Publication date: December 31, 2015Applicant: FREESCALE SEMICONDUCTOR, INC.Inventors: Mahesh K. SHAH, Jerry L. WHITE, Li LI, Hussain H. LADHANI, Audel A. SANCHEZ, Lakshminarayan VISWANATHAN, Fernando A. SANTOS