Abstract: A memory module has a registering clock driver (RCD) that issues two column address strobe (CAS) commands with a single memory access command to exchange a double amount of data per dynamic random access memory (DRAM) device per memory access command. With double the amount of data per DRAM device, the memory module can provide double the pseudo channels as compared to a memory module where a single CAS command is issued per access command. The RCD can time division multiplex separate first commands for a first group of the DRAM devices from second commands for a second group of the DRAM devices on the command/address (CA) bus.

Abstract: Systems, apparatuses and methods may provide for technology that generates a first refresh request with respect to a first sub-channel in a dynamic random access memory (DRAM), generates a second refresh request with respect to a second sub-channel in the DRAM, wherein the first sub-channel and the second sub-channel share a channel boundary, and synchronizes the first refresh request with the second refresh request. In one example, the first sub-channel is associated with a first scheduling queue and the second sub-channel is associated with a second scheduling queue. The technology may also adaptively spread refresh commands over the refresh interval period, dynamically schedule refreshes based on bus efficiency and/or selectively issue opportunistic refreshes based on read/write traffic.

Abstract: An embodiment of a memory device includes technology for a memory cell array logically organized in two or more banks of at least two rows and two columns per bank, and two or more local caches respectively coupled to the two or more banks of the memory cell array, where each local cache has a size which is an integer multiple of a memory page size of the memory cell array. Other embodiments are disclosed and claimed.

Abstract: An embodiment of a semiconductor apparatus may include technology to provide two or more dynamic random access memory devices, and provide access to the two or more dynamic random access memory devices with two or more pseudo-channels per memory channel. Other embodiments are disclosed and claimed.

Abstract: A stacked memory chip device is described. The stacked memory chip device includes a plurality of stacked memory chips. The stacked memory chip device includes read/write logic circuitry to service read/write requests for cache lines kept within the plurality of stacked memory chips. The stacked memory chip device includes data protection circuitry to store information to protect substantive data of cache lines in the plurality of stacked memory chips, where, the information is kept in more than one of the plurality of stacked memory chips, and where, any subset of the information that protects respective substantive information of a particular one of the cache lines is not stored in a same memory chip with the respective substantive information.

Abstract: An embodiment of a memory device includes technology for a memory cell array logically organized in two or more banks of at least two rows and two columns per bank, and two or more local caches respectively coupled to the two or more banks of the memory cell array, where each local cache has a size which is an integer multiple of a memory page size of the memory cell array. Other embodiments are disclosed and claimed.

Abstract: An embodiment of a semiconductor apparatus may include technology to provide two or more dynamic random access memory devices, and provide access to the two or more dynamic random access memory devices with two or more pseudo-channels per memory channel. Other embodiments are disclosed and claimed.

Abstract: A stacked memory chip device is described. The stacked memory chip device includes a plurality of stacked memory chips. The stacked memory chip device includes read/write logic circuitry to service read/write requests for cache lines kept within the plurality of stacked memory chips. The stacked memory chip device includes data protection circuitry to store information to protect substantive data of cache lines in the plurality of stacked memory chips, where, the information is kept in more than one of the plurality of stacked memory chips, and where, any subset of the information that protects respective substantive information of a particular one of the cache lines is not stored in a same memory chip with the respective substantive information.

Abstract: In a memory system a multichip memory provides data redundancy for error recovery. The multichip memory can be an integrated circuit package with multiple memory dies or memory devices integrated with a common package. The multiple memory dies are coupled in a daisy chain, and can be a vertical stack or in a planar formation. The memory chip or chips at the end of the chain store parity data, and the other devices store data. The multichip memory includes XOR (exclusive OR) logic to compute parity to store in the redundant parity chips.