Patents by Inventor Hussein M. Naquib

Hussein M. Naquib has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming low resistivity hillock free conductors in VLSI devices
    Patent number: 4680854
    Abstract: Particularly for use in MOS (metal-oxide-semiconductor) VLSI (very large scale integrated) circuits, an aluminum conductor coated with a layer of refractory metal or refractory metal silicide has the advantages of being resistant both to electromigration and to hillock growth. By this invention, to reduce the resistivity of this composite conductor and to eliminate hillock formation, the conductor is subjected to an ion implantation step to cause interface mixing between the aluminum and the adjacent refractory metal or refractory metal silicide.
    Type: Grant
    Filed: December 24, 1985
    Date of Patent: July 21, 1987
    Assignee: Northern Telecom Limited
    Inventors: Vu Q. Ho, Heinz J. Nentwich, Hussein M. Naquib