Patents by Inventor Hussein T. Hanafi

Hussein T. Hanafi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
    Publication number: 20040046208
    Abstract: A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
    Type: Application
    Filed: September 11, 2003
    Publication date: March 11, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert H. Dennard, Wilfried E. Haensch, Hussein T. Hanafi