Abstract: Disclosed is a semiconductor memory device carrying out reading and writing operations of data, comprising memory means consisting of a plurality of memory cells for storing data; test signal generation means for generating a test signal upon a test being carried out; at least one first buffer for receiving an external address bit and generating inverting and noninverting address bits; at least one second address buffer for selectively receiving said external address bit in response to said test signal from said test signal generation means and generating said inverting and noninverting address bits or the signals of the same logic value through two output terminals thereof; decoding means for receiving output signals from said first and second address buffers and selecting one or plural corresponding memory cells of said memory means; and voltage level compensation means for compensating a voltage level applied to each of words lines of said memory cells selected by said decoding means in accordance with sai