Patents by Inventor Huy Q. Nguyen

Huy Q. Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12159797
    Abstract: Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: December 3, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Wolfgang Aderhold, Samuel Howells, Amritha Rammohan, Huy Q. Nguyen
  • Publication number: 20230051521
    Abstract: Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.
    Type: Application
    Filed: August 16, 2021
    Publication date: February 16, 2023
    Inventors: Wolfgang Aderhold, Samuel Howells, Amritha Rammohan, Huy Q. Nguyen
  • Publication number: 20220228198
    Abstract: Methods for characterizing a population of microbes in a sample are described. The methods include: amplifying microbial polynucleotides obtained from the sample to form a plurality of amplicons and combining the amplicons with a plurality of microbeads, wherein each of the microbeads has a lanthanide spectral signature paired with the sequence of capture polynucleotides immobilized on the microbead. At least some of the capture polynucleotides comprise a sequence substantially complementary to a microbe-identifying sequence in one or more amplicons, such that at least some amplicons are captured onto beads by the capture polynucleotides and the microbe can be identified based on the lanthanide spectral signature of with which the capture polynucleotide is paired. Further described are methods for the identification of pathogens present in a sample by evaluating patterns of hybridization of a capture oligonucleotide to amplicons.
    Type: Application
    Filed: May 27, 2020
    Publication date: July 21, 2022
    Inventors: Adam K. White, Huy Q. Nguyen, Feiqiao Brian Yu, Tyler Shimko, Polly M. Fordyce, Nadya Andini, Samuel Yang, Gaeun Kim
  • Patent number: 10892147
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: January 12, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li
  • Publication number: 20200097912
    Abstract: Techniques of selective surfacing email messages in computing systems are disclosed herein. In one embodiment, a method includes calculating an importance value corresponding to an incoming email based on one or more values of attributes of the incoming email and corresponding contribution values of the features toward the importance value. The method can then include performing a comparison between the calculated importance value of the incoming email and a preset importance threshold and, based on the performed comparison, selectively surfacing the incoming email to the user in a first section of an email inbox irrespective of a date/time of reception of the incoming email relative to other emails in the inbox.
    Type: Application
    Filed: December 11, 2018
    Publication date: March 26, 2020
    Inventors: Philippe Favre, Huy Q. Nguyen, Steven Truong, Zhuhao Wang, Xucheng Zhang, Xiaodong Wang, Shufang Xie, Yuwei Fang, Jianfeng Gao
  • Patent number: 10385220
    Abstract: Systems and method for forming a nanocomposite material. One example of a nanocomposite material includes a first sulfur-based nanoparticle material defining a first nanophase and a second sulfur-based nanoparticle material defining a second nanophase, wherein the nanocomposite material is at least partially long-wave infrared (LWIR) transmitting, and the first nanophase and the second nanophase are co-dispersed to form interpenetrating networks with one another and each has a grain structure that is distinct from one another.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: August 20, 2019
    Assignee: RAYTHEON COMPANY
    Inventors: Joseph M. Wahl, Richard L. Gentilman, Randal W. Tustison, Christopher S. Nordahl, Huy Q. Nguyen, Ralph Korenstein
  • Patent number: 10290504
    Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: May 14, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wei Liu, Theresa Kramer Guarini, Huy Q. Nguyen, Malcolm Bevan, Houda Graoui, Philip A. Bottini, Bernard L. Hwang, Lara Hawrylchak, Rene George
  • Publication number: 20180258294
    Abstract: Systems and method for forming a nanocomposite material. One example of a nanocomposite material includes a first sulfur-based nanoparticle material defining a first nanophase and a second sulfur-based nanoparticle material defining a second nanophase, wherein the nanocomposite material is at least partially long-wave infrared (LWIR) transmitting, and the first nanophase and the second nanophase are co-dispersed to form interpenetrating networks with one another and each has a grain structure that is distinct from one another.
    Type: Application
    Filed: May 15, 2018
    Publication date: September 13, 2018
    Inventors: Joseph M. Wahl, Richard L. Gentilman, Randal W. Tustison, Christopher S. Nordahl, Huy Q. Nguyen, Ralph Korenstein
  • Patent number: 10000642
    Abstract: Systems and method for forming a nanocomposite material. One example of a nanocomposite material includes a first sulfur-based nanoparticle material defining a first nanophase and a second sulfur-based nanoparticle material defining a second nanophase, wherein the nanocomposite material is at least partially long-wave infrared (LWIR) transmitting, and the first nanophase and the second nanophase are co-dispersed to form interpenetrating networks with one another and each has a grain structure that is distinct from one another.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: June 19, 2018
    Assignee: RAYTHEON COMPANY
    Inventors: Joseph M. Wahl, Richard L. Gentilman, Randall W. Tustison, Christopher S. Nordahl, Huy Q. Nguyen, Ralph Korenstein
  • Patent number: 9996339
    Abstract: Disclosed herein are systems, methods, and software to enhance updates to digital content. In at least one implementation, an update agent identifies from a set of files at least a file that is scheduled to be updated from a present version of the file to a new version of the file as part of an update to the set of files. The update may include a set of delta files for updating the file from previous versions of the file to the new version and a complete file for updating the file to the new version.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: June 12, 2018
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Abhishek Agarwal, Anthony D. Krueger, Huy Q. Nguyen, Peter Cai, Jefferson B. Criddle
  • Publication number: 20180130647
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Application
    Filed: January 8, 2018
    Publication date: May 10, 2018
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li
  • Publication number: 20180082847
    Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.
    Type: Application
    Filed: November 27, 2017
    Publication date: March 22, 2018
    Inventors: Wei LIU, Theresa Kramer GUARINI, Huy Q. NGUYEN, Malcolm BEVAN, Houda GRAOUI, Philip A. BOTTINI, Bernard L. HWANG, Lara HAWRYLCHAK, Rene GEORGE
  • Patent number: 9865438
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: January 9, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li
  • Patent number: 9831091
    Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: November 28, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wei Liu, Theresa Kramer Guarini, Huy Q. Nguyen, Malcolm Bevan, Houda Graoui, Philip A. Bottini, Bernard L. Hwang, Lara Hawrylchak, Rene George
  • Publication number: 20160358781
    Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.
    Type: Application
    Filed: June 2, 2016
    Publication date: December 8, 2016
    Inventors: Wei LIU, Theresa Kramer GUARINI, Huy Q. NGUYEN, Malcolm BEVAN, Houda GRAOUI, Philip A. BOTTINI, Bernard L. HWANG, Lara HAWRYLCHAK, Rene GEORGE
  • Publication number: 20160068686
    Abstract: Systems and method for forming a nanocomposite material. One example of a nanocomposite material includes a first sulfur-based nanoparticle material defining a first nanophase and a second sulfur-based nanoparticle material defining a second nanophase, wherein the nanocomposite material is at least partially long-wave infrared (LWIR) transmitting, and the first nanophase and the second nanophase are co-dispersed to form interpenetrating networks with one another and each has a grain structure that is distinct from one another.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 10, 2016
    Inventors: Joseph M. Wahl, Richard L. Gentilman, Randall W. Tustison, Christopher S. Nordahl, Huy Q. Nguyen, Ralph Korenstein
  • Publication number: 20150355899
    Abstract: Disclosed herein are systems, methods, and software to enhance updates to digital content. In at least one implementation, an update agent identifies from a set of files at least a file that is scheduled to be updated from a present version of the file to a new version of the file as part of an update to the set of files. The update may include a set of delta files for updating the file from previous versions of the file to the new version and a complete file for updating the file to the new version.
    Type: Application
    Filed: June 4, 2014
    Publication date: December 10, 2015
    Inventors: Abhishek Agarwal, Anthony D. Krueger, Huy Q. Nguyen, Peter Cai, Jefferson B. Criddle
  • Patent number: 8965751
    Abstract: Multi-lingual translation for third party content feed applications is provided in social network and similar environments in an independent manner from the content feed. A copy of a content feed may be distributed to consumers via content feed channels of a social network or similar service with language specific views. Translation is performed post-content feed based on tagged format of the content feed translating language dependent text into a selected (or detected) language for a user and leaving language independent text in its original form. Support for new languages may be added or existing languages removed independent of the content feed.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: February 24, 2015
    Assignee: Microsoft Corporation
    Inventors: Burra Gopal, Gaurav Doshi, Huy Q. Nguyen, Ovais Khan
  • Publication number: 20120109631
    Abstract: Multi-lingual translation for third party content feed applications is provided in social network and similar environments in an independent manner from the content feed. A copy of a content feed may be distributed to consumers via content feed channels of a social network or similar service with language specific views. Translation is performed post-content feed based on tagged format of the content feed translating language dependent text into a selected (or detected) language for a user and leaving language independent text in its original form. Support for new languages may be added or existing languages removed independent of the content feed.
    Type: Application
    Filed: November 1, 2010
    Publication date: May 3, 2012
    Applicant: Microsoft Corporation
    Inventors: Burra Gopal, Gaurav Doshi, Huy Q. Nguyen, Ovais Khan
  • Patent number: 8101906
    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: January 24, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Sairaju Tallavarjula, Kailash Pradhan, Huy Q. Nguyen, Jian Li