Patents by Inventor Huy Trong Tran

Huy Trong Tran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a power switching trench MOSFET having aligned source regions
    Patent number: 5897343
    Abstract: A trench power switching transistor (10) is fabricated having sub-micron features on a body layer (26) without using sub-micron lithography. An opening in a field oxide layer (28) defines an area for implanting a source region (30) in the body layer (26) that is self-aligned to a first edge (28A) and a second edge (28B) of the field oxide layer (28). Sidewall spacers (32) are formed in accordance with the first and second edges (28A and 28B) of the field oxide layer (28). A trench is aligned to the sidewall spacers (32) and formed centered within the source region (30). An implant layer (42) formed between sections of the power switching transistor (10) is aligned to the sidewall spacers (32) at the first and second edges (28A and 28B).
    Type: Grant
    Filed: March 30, 1998
    Date of Patent: April 27, 1999
    Assignee: Motorola, Inc.
    Inventors: Leo Mathew, Keith G. Kamekona, Huy Trong Tran, Prasad Venkatraman, Jeffrey Pearse, Bich-Yen Nguyen