Patents by Inventor Huynh Duy Khang NGUYEN

Huynh Duy Khang NGUYEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method for multilayer structure of magnetic body and BiSb layer, magnetoresistive memory, and pure spin injection source
    Patent number: 11637234
    Abstract: A magnetoresistive memory cell includes an MTJ element including a magnetization free layer and a pure spin injection source. The pure spin injection source includes a BiSb layer coupled to the magnetization free layer. By flowing an in-plane current through the BiSb layer, this arrangement is capable of providing magnetization reversal of the magnetization free layer.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: April 25, 2023
    Assignee: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Nam Hai Pham, Huynh Duy Khang Nguyen
  • MANUFACTURING METHOD FOR MULTILAYER STRUCTURE OF MAGNETIC BODY AND BiSb LAYER, MAGNETORESISTIVE MEMORY, AND PURE SPIN INJECTION SOURCE
    Publication number: 20200279992
    Abstract: A magnetoresistive memory cell includes an MTJ element including a magnetization free layer and a pure spin injection source. The pure spin injection source includes a BiSb layer coupled to the magnetization free layer. By flowing and in-plane current through the BiSb layer, this arrangement is capable of providing magnetization reversal of the magnetization free layer.
    Type: Application
    Filed: September 14, 2018
    Publication date: September 3, 2020
    Inventors: Nam Hai PHAM, Huynh Duy Khang NGUYEN