Abstract: The technology disclosed in the present specification is a method of evaluating insulation performance of a low-temperature storage tank, the method including an operation of transferring an internal electrode to a lower base material, wherein the operation includes: a first operation of measuring an amount of infrared energy of a sensor pad; a second operation of assuming a temperature of a substrate of the sensor pad as a specific value; a third operation of calculating a temperature of a first surface of the sensor pad by using the amount of the infrared energy measured from the sensor pad and the temperature of the substrate; a fourth operation of obtaining a temperature of the substrate from a transient heat conduction equation by using the temperature of the first surface as a boundary condition; a fifth operation of determining whether the obtained temperature of the substrate is equal to the assumed temperature of the substrate; and a sixth operation of, when the temperatures of the substrate are equa

Abstract: Tri-state devices having exclusive gate output control include a tri-state device having first and second inputs and a tri-state output, a normally-off transistor connected in series between the tri-state output and a first reference potential (e.g., VCC or VSS) and an exclusive gate (e.g., NOR, OR) having first and second inputs coupled to the first and second inputs of said tri-state device, respectively, and an output electrically coupled to a control electrode of said normally-off transistor so that the tri-state output becomes electrically connected through the normally-off transistor to the first reference potential whenever the first and second inputs of said tri-state device are at different logic potentials. However, the normally-off transistor is maintained in a nonconductive state to reduce power consumption whenever the output of the tri-state device is switched to VCC or VSS.