Abstract: A method of forming a gate dielectric layer is disclosed. The method comprises the following steps. A substrate is provided having silicon regions containing surfaces upon which gate dielectrics are to be disposed. An oxide is formed over the surfaces. A silicon layer is formed over the oxide layer. A nitridation process is performed. An optional high temperature annealing step may be performed.

Abstract: A recovery circuit may include a phase detector, a quadrant decision unit, a quadrant controller, a charge pump unit, and a phase interpolator. The phase detector may compare a phase of input data with a phase of a current output clock to generate first up signal and first down signal and the quadrant decision unit may determine the phase location for the current output clock and output quadrant decision signals based on a phase location. The quadrant controller may output a second up signal and a second down signal based on the first up signal and the first down signal and the quadrant decision signals, and the charge pump unit may output a first and second phase control voltage based on the second up signal and the second down signal. The phase interpolator may select clocks from a plurality of clocks based on the quadrant decision signals and output an output clock signal based on the selected clocks.