Patents by Inventor Hwa-Sung Rhe

Hwa-Sung Rhe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming NMOS/PMOS transistors with source/drains including strained materials
    Patent number: 7682888
    Abstract: A method of forming an integrated circuit includes selectively forming active channel regions for NMOS and PMOS transistors on a substrate parallel to a <100> crystal orientation thereof and selectively forming source/drain regions of the NMOS transistors with Carbon (C) impurities therein.
    Type: Grant
    Filed: May 17, 2006
    Date of Patent: March 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ho Lee, Tetsuji Ueno, Hwa-Sung Rhe
  • Methods of forming NMOS/PMOS transistors with source/drains including strained materials and devices so formed
    Publication number: 20070048907
    Abstract: A method of forming an integrated circuit includes selectively forming active channel regions for NMOS and PMOS transistors on a substrate parallel to a <100> crystal orientation thereof and selectively forming source/drain regions of the NMOS transistors with Carbon (C) impurities therein.
    Type: Application
    Filed: May 17, 2006
    Publication date: March 1, 2007
    Inventors: Ho Lee, Tetsuji Ueno, Hwa-Sung Rhe