Patents by Inventor Hwachol LEE

Hwachol LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Perpendicular magnetic layer and magnetic device including the same
    Patent number: 10395809
    Abstract: Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (Mn1?xGax)Ny layer (0<x?0.5 and 0<y<0.1) formed by providing nitrogen (N) into a MnGa alloy while adjusting a nitrogen amount. The perpendicular magnetic layer can be formed flat.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: August 27, 2019
    Assignees: Samsung Electronics Co., Ltd., National Institute for Materials Science
    Inventors: Shigeki Takahashi, Yoshiaki Sonobe, Hiroaki Sukegawa, Hwachol Lee, Kazuhiro Hono, Seiji Mitani, Jun Liu
  • Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium
    Patent number: 9842636
    Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0<x?0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: December 12, 2017
    Assignees: NATIONAL INSTITUTE FOR MATERIALS SCIENCE, SAMSUNG ELECTRONICS COMPANY LIMITED
    Inventors: Hiroaki Sukegawa, Hwachol Lee, Kazuhiro Hono, Seiji Mitani, Tadakatsu Ohkubo, Jun Liu, Shinya Kasai, Kwangseok Kim
  • PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME
    Publication number: 20170330668
    Abstract: Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (Mn1?xGax)Ny layer (0<x?0.5 and 0<y<0.1) formed by providing nitrogen (N) into a MnGa alloy while adjusting a nitrogen amount. The perpendicular magnetic layer can be formed flat.
    Type: Application
    Filed: May 10, 2017
    Publication date: November 16, 2017
    Inventors: Shigeki TAKAHASHI, Yoshiaki SONOBE, Hiroaki SUKEGAWA, Hwachol LEE, Kazuhiro HONO, Seiji MITANI, Jun LIU
  • PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM STRUCTURE, MAGNETORESISTANCE ELEMENT, AND PERPENDICULAR MAGNETIC RECORDING MEDIUM
    Publication number: 20160314825
    Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-x,Gax)4N1-y (0<x?0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.
    Type: Application
    Filed: April 21, 2016
    Publication date: October 27, 2016
    Applicants: NATIONAL INSTITUTE FOR MATERIALS SCIENCE, SAMSUNG ELECTRONICS COMPANY LIMITED
    Inventors: Hiroaki SUKEGAWA, Hwachol LEE, Kazuhiro HONO, Seiji MITANI, Tadakatsu OHKUBO, Jun LIU, Shinya KASAI, Kwangseok KIM