Patents by Inventor HWAN-CHUNG KIM
HWAN-CHUNG KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10635349Abstract: A storage device includes nonvolatile memories and a controller. The controller previously manages a correspondence relationship between physical addresses indicating the memory regions and stream identifiers, before first write data is received by the controller. The controller controls the nonvolatile memories such that the first write data is stored in a first memory region of a physical address which is managed corresponding to a first stream identifier of the first write data in the correspondence relationship. The first write data is transferred to the nonvolatile memories based on the correspondence relationship, regardless of whether second write data having a second stream identifier is received by the controller.Type: GrantFiled: January 2, 2018Date of Patent: April 28, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Younggeun Lee, Jinwoo Kim, Youngsik Kim, Hwan-Chung Kim, Jeonghoon Cho
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Publication number: 20190004736Abstract: A storage device includes nonvolatile memories and a controller. The controller previously manages a correspondence relationship between physical addresses indicating the memory regions and stream identifiers, before first write data is received by the controller. The controller controls the nonvolatile memories such that the first write data is stored in a first memory region of a physical address which is managed corresponding to a first stream identifier of the first write data in the correspondence relationship. The first write data is transferred to the nonvolatile memories based on the correspondence relationship, regardless of whether second write data having a second stream identifier is received by the controller.Type: ApplicationFiled: January 2, 2018Publication date: January 3, 2019Inventors: YOUNGGEUN LEE, JINWOO KIM, YOUNGSIK KIM, HWAN-CHUNG KIM, JEONGHOON CHO
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Patent number: 9847140Abstract: An operating method of a storage device which includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory, may include tracking a clock signal; entering a vendor mode of the storage device when the clock signal corresponds to a vendor pattern; and maintaining a normal mode of the storage device when the clock signal does not correspond to the vendor pattern, wherein, in the normal mode, a command received from an external host device is executed according to a first rule, and wherein, in the vendor mode, the command received from the external host device is executed according to a second rule different from the first rule.Type: GrantFiled: October 16, 2015Date of Patent: December 19, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hae-Sung Bae, Taekkyun Lee, Hyun-Ju Kim, Hwan-Chung Kim, Jonghwan Lee, Young Woo Jung
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Patent number: 9672104Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.Type: GrantFiled: May 17, 2016Date of Patent: June 6, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Young Woo Jung, Hwan-Chung Kim, Kyoungkuy Park, Eunju Park, Bong-Gwan Seol
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Publication number: 20160291897Abstract: A data storage device according to an exemplary embodiment includes: a non-volatile memory which includes a first region configured to store vendor data and a second region configured to store user data; and a memory controller configured to receive a first command from a host, determine whether there is a first ID of a program, which is allowed to access the first region, in the first command, and decide whether to enter a vendor mode for accessing the first region according to a result of the determination.Type: ApplicationFiled: January 27, 2016Publication date: October 6, 2016Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hae Sung BAE, Taek Kyun LEE, Hyun Ju KIM, Hwan Chung KIM, Young Woo JUNG
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Publication number: 20160259685Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.Type: ApplicationFiled: May 17, 2016Publication date: September 8, 2016Inventors: YOUNG WOO JUNG, HWAN-CHUNG KIM, KYOUNGKUY PARK, EUNJU PARK, BONG-GWAN SEOL
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Patent number: 9431117Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.Type: GrantFiled: September 26, 2013Date of Patent: August 30, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Young Woo Jung, Hwan-Chung Kim, Kyoungkuy Park, Eunju Park, Bong-Gwan Seol
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Patent number: 9368223Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.Type: GrantFiled: June 30, 2015Date of Patent: June 14, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Young Woo Jung, Hwan-Chung Kim, Kyoungkuy Park, Eunju Park, Bong-Gwan Seol
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Publication number: 20160147452Abstract: An operating method of a storage device which includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory, may include tracking a clock signal; entering a vendor mode of the storage device when the clock signal corresponds to a vendor pattern; and maintaining a normal mode of the storage device when the clock signal does not correspond to the vendor pattern, wherein, in the normal mode, a command received from an external host device is executed according to a first rule, and wherein, in the vendor mode, the command received from the external host device is executed according to a second rule different from the first rule.Type: ApplicationFiled: October 16, 2015Publication date: May 26, 2016Inventors: Hae-Sung Bae, Taekkyun Lee, Hyun-Ju Kim, Hwan-Chung Kim, Jonghwan Lee, Young Woo Jung
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Publication number: 20150302928Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.Type: ApplicationFiled: June 30, 2015Publication date: October 22, 2015Inventors: Young Woo JUNG, Hwan-Chung KIM, Kyoungkuy PARK, Eunju PARK, Bong-Gwan SEOL
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Publication number: 20140101372Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.Type: ApplicationFiled: September 26, 2013Publication date: April 10, 2014Inventors: YOUNG WOO JUNG, HWAN-CHUNG KIM, KYOUNGKUY PARK, EUNJU PARK, BONG-GWAN SEOL
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Publication number: 20130019054Abstract: A flash memory device performs an erase operation by execution of an over program. device. In response to an erase request directed to requested page data a logical page address is converted to a corresponding physical page address, an over program data pattern for an over program operation is generated, and the over program operation is executed using the PPA to change a threshold voltage distribution for at least one memory cell of the requested page data in accordance with the over program data pattern.Type: ApplicationFiled: May 8, 2012Publication date: January 17, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: YOUNG-WOO JUNG, HWAN-CHUNG KIM, HEE-TAK SHIN, CHUN-SOO AHN, JIN-WOO JUNG