Patents by Inventor HWAN-CHUNG KIM

HWAN-CHUNG KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10635349
    Abstract: A storage device includes nonvolatile memories and a controller. The controller previously manages a correspondence relationship between physical addresses indicating the memory regions and stream identifiers, before first write data is received by the controller. The controller controls the nonvolatile memories such that the first write data is stored in a first memory region of a physical address which is managed corresponding to a first stream identifier of the first write data in the correspondence relationship. The first write data is transferred to the nonvolatile memories based on the correspondence relationship, regardless of whether second write data having a second stream identifier is received by the controller.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: April 28, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Younggeun Lee, Jinwoo Kim, Youngsik Kim, Hwan-Chung Kim, Jeonghoon Cho
  • Publication number: 20190004736
    Abstract: A storage device includes nonvolatile memories and a controller. The controller previously manages a correspondence relationship between physical addresses indicating the memory regions and stream identifiers, before first write data is received by the controller. The controller controls the nonvolatile memories such that the first write data is stored in a first memory region of a physical address which is managed corresponding to a first stream identifier of the first write data in the correspondence relationship. The first write data is transferred to the nonvolatile memories based on the correspondence relationship, regardless of whether second write data having a second stream identifier is received by the controller.
    Type: Application
    Filed: January 2, 2018
    Publication date: January 3, 2019
    Inventors: YOUNGGEUN LEE, JINWOO KIM, YOUNGSIK KIM, HWAN-CHUNG KIM, JEONGHOON CHO
  • Patent number: 9847140
    Abstract: An operating method of a storage device which includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory, may include tracking a clock signal; entering a vendor mode of the storage device when the clock signal corresponds to a vendor pattern; and maintaining a normal mode of the storage device when the clock signal does not correspond to the vendor pattern, wherein, in the normal mode, a command received from an external host device is executed according to a first rule, and wherein, in the vendor mode, the command received from the external host device is executed according to a second rule different from the first rule.
    Type: Grant
    Filed: October 16, 2015
    Date of Patent: December 19, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hae-Sung Bae, Taekkyun Lee, Hyun-Ju Kim, Hwan-Chung Kim, Jonghwan Lee, Young Woo Jung
  • Patent number: 9672104
    Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: June 6, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Woo Jung, Hwan-Chung Kim, Kyoungkuy Park, Eunju Park, Bong-Gwan Seol
  • Publication number: 20160291897
    Abstract: A data storage device according to an exemplary embodiment includes: a non-volatile memory which includes a first region configured to store vendor data and a second region configured to store user data; and a memory controller configured to receive a first command from a host, determine whether there is a first ID of a program, which is allowed to access the first region, in the first command, and decide whether to enter a vendor mode for accessing the first region according to a result of the determination.
    Type: Application
    Filed: January 27, 2016
    Publication date: October 6, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hae Sung BAE, Taek Kyun LEE, Hyun Ju KIM, Hwan Chung KIM, Young Woo JUNG
  • Publication number: 20160259685
    Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.
    Type: Application
    Filed: May 17, 2016
    Publication date: September 8, 2016
    Inventors: YOUNG WOO JUNG, HWAN-CHUNG KIM, KYOUNGKUY PARK, EUNJU PARK, BONG-GWAN SEOL
  • Patent number: 9431117
    Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: August 30, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Woo Jung, Hwan-Chung Kim, Kyoungkuy Park, Eunju Park, Bong-Gwan Seol
  • Patent number: 9368223
    Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: June 14, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Woo Jung, Hwan-Chung Kim, Kyoungkuy Park, Eunju Park, Bong-Gwan Seol
  • Publication number: 20160147452
    Abstract: An operating method of a storage device which includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory, may include tracking a clock signal; entering a vendor mode of the storage device when the clock signal corresponds to a vendor pattern; and maintaining a normal mode of the storage device when the clock signal does not correspond to the vendor pattern, wherein, in the normal mode, a command received from an external host device is executed according to a first rule, and wherein, in the vendor mode, the command received from the external host device is executed according to a second rule different from the first rule.
    Type: Application
    Filed: October 16, 2015
    Publication date: May 26, 2016
    Inventors: Hae-Sung Bae, Taekkyun Lee, Hyun-Ju Kim, Hwan-Chung Kim, Jonghwan Lee, Young Woo Jung
  • Publication number: 20150302928
    Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.
    Type: Application
    Filed: June 30, 2015
    Publication date: October 22, 2015
    Inventors: Young Woo JUNG, Hwan-Chung KIM, Kyoungkuy PARK, Eunju PARK, Bong-Gwan SEOL
  • Publication number: 20140101372
    Abstract: A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.
    Type: Application
    Filed: September 26, 2013
    Publication date: April 10, 2014
    Inventors: YOUNG WOO JUNG, HWAN-CHUNG KIM, KYOUNGKUY PARK, EUNJU PARK, BONG-GWAN SEOL
  • Publication number: 20130019054
    Abstract: A flash memory device performs an erase operation by execution of an over program. device. In response to an erase request directed to requested page data a logical page address is converted to a corresponding physical page address, an over program data pattern for an over program operation is generated, and the over program operation is executed using the PPA to change a threshold voltage distribution for at least one memory cell of the requested page data in accordance with the over program data pattern.
    Type: Application
    Filed: May 8, 2012
    Publication date: January 17, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: YOUNG-WOO JUNG, HWAN-CHUNG KIM, HEE-TAK SHIN, CHUN-SOO AHN, JIN-WOO JUNG