Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A light emitting device includes a light emitting structure having a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A first electrode is electrically connected to the first conductive semiconductor layer and is provided under the light emitting structure, and a second electrode is electrically connected to the second conductive semiconductor layer and is provided under the light emitting structure. A first contact portion is provided through the light emitting structure and includes a first region electrically connected to the first electrode. A second region contacts a top surface of the first conductive semiconductor layer, and an insulating ion implantation layer is provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer.

Abstract: A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer which is underneath the first conductive semiconductor layer, and a second conductive semiconductor layer which is underneath the active layer; a reflective electrode, which is arranged under the light-emitting structure; and an electrode which is arranged inside the first conductive semiconductor layer and comprises a conductive ion injection layer.

Abstract: A light emitting device including a support substrate, an adhesive layer on the support substrate, a conductive layer on the adhesive layer, a light emitting structure on the conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, a metal layer disposed under the conductive layer and at an adjacent region of the conductive layer, and a passivation layer disposed on a side surface of the light emitting structure, wherein the first electrode is vertically non-overlapped with the conductive layer, wherein the conductive layer includes a first layer and a second layer on the first layer, wherein the second layer directly contacts with the light emitting structure, wherein the metal layer directly contacts with the light emitting structure, wherein the metal layer is expanded to an outer area of the light emitting structure, and wherein the passivatio

Abstract: A first light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. A second light emitting structure includes a third semiconductor layer, an active layer, and a fourth semiconductor layer. A first electrode and a second electrode connect to the first semiconductor layer, and the second semiconductor layer, respectively. A third electrode and a fourth electrode connect to the third semiconductor layer, and the fourth semiconductor layer, respectively. A first contact portion includes a first region connected to the first electrode and a second region making contact with a top surface of the first semiconductor layer, and a second contact portion connects to the second and third electrodes. A third contact portion includes a first region connected to the third electrode and a second region making contact with a top surface of the third semiconductor layer.

Abstract: Disclosed here is a touch screen panel capable of implementing a double routing structure without increasing the number of pads of a pad part by implementing some sensing lines of first and second sensing lines that are electrically coupled to first and second sensing cells arranged on a display region, in the double routing structure, and electrically coupling the sensing lines implemented in the double routing structure to the pads of the pad part through connection patterns.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.

Abstract: A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer which is underneath the first conductive semiconductor layer, and a second conductive semiconductor layer which is underneath the active layer; a reflective electrode, which is arranged under the light-emitting structure; and an electrode which is arranged inside the first conductive semiconductor layer and comprises a conductive ion injection layer.

Abstract: A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a first electrode arranged on the first conductivity type semiconductor layer; an ohmic layer arranged on a predetermined area of the second conductivity type semiconductor layer; a silicide layer arranged on the ohmic layer, with contacting with the second conductivity type semiconductor layer; and a conductive supporting substrate arranged on the silicide layer.

Abstract: A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

Abstract: A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

Abstract: Disclosed is a light emitting device including a support substrate, a transistor unit disposed at one side of the upper surface of the support substrate, a light emitting device unit disposed at the other side of the upper surface of the support substrate, and an insulating layer disposed between the transistor unit and the light emitting device unit and between the support substrate and the transistor unit and isolating the transistor unit from the light emitting device unit.

Abstract: A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a metal support layer having a plurality of protrusions disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the metal support layer, and a stepped conductive layer disposed between the second conductive semiconductor layer and the metal support layer. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the metal support layer. The insulating layer is laterally disposed between the plurality of upper parts.

Abstract: A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A first electrode is electrically coupled to the first conductive semiconductor layer. A current blocking layer is provided adjacent to the light emitting structure, and includes a top surface disposed in the first conductive semiconductor layer by passing through the active layer. A first metal layer is provided over the current blocking layer and contacts the first conductive semiconductor layer, and a reflective electrode is electrically coupled to the second conductive semiconductor layer.

Abstract: A light emitting structure includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A plurality of first electrodes is provided on the first conductive semiconductor layer, and a second electrode electrically connects to the second conductive semiconductor layer. A conductive support member is provided under the second electrode, and a plurality of first connection parts is coupled the first electrodes to the conductive support member, respectively. A second connection part is coupled to the second electrode. The first electrodes are spaced apart from each other on a top surface of the first conductive semiconductor layer.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Abstract: A touch screen panel having first sensing electrodes including a plurality of first sensing cells arranged on a substrate and a first coupling unit that electrically couples adjacent ones of the first sensing cells, and having second sensing electrodes including a plurality of second sensing cells arranged on the substrate and a second coupling unit that electrically couples adjacent ones of the second sensing cells. The second coupling unit includes a plurality of relay patterns and the relay patterns are positioned in the first sensing electrodes.