Abstract: A touch screen panel in which an occurrence of a scratch at intersections of coupling patterns respectively coupling first sensing cells and second sensing cells to each other in a first direction and in a second direction is prevented. The touch screen panel includes a transparent substrate, sensing patterns formed on a surface of the transparent substrate. The sensing patterns include first sensing cells disposed along a first direction, second sensing cells disposed between the first sensing cells along a second direction intersecting the first direction, first coupling patterns coupling the first sensing cells to each other in the first direction, second coupling patterns coupling the second sensing cells to each other in the second direction, and an insulating layer disposed between the first coupling patterns and the second coupling patterns at intersections of the first coupling patterns and the second coupling patterns.

Abstract: A light emitting device is provided. The light emitting device comprises a conductive substrate, a reflection layer, a support layer, an ohmic contact layer, and a light emitting semiconductor layer. The reflection layer is disposed on the conductive substrate. The support layer is disposed partially on the reflection layer. The ohmic contact layer is disposed at the side of the support layer. The light emitting semiconductor layer is disposed on the ohmic contact layer and the support layer.

Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.

Abstract: According to an embodiment of the present invention, a semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, an electrode layer disposed under the light emitting structure, an electrode disposed on the light emitting structure, a conductive support member disposed under the electrode layer, a conductive layer disposed between the light emitting structure and the conductive support member, and an insulating layer disposed between the conductive support member and the light emitting structure, wherein the electrode layer is in contact with a first area of a lower surface of the light emitting structure and the conductive layer is in contact with a second area of the lower surface of the light emitting structure, and wherein the conductive layer includes a different material from the electrode layer.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same.

Abstract: A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer, a conductive layer, a bonding layer, a support member, first and second pads, and first and second electrodes. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The conductive layer is disposed under the light emitting structure layer. The bonding layer is disposed under the conductive layer. The support member is disposed under the bonding layer. The first pad is disposed under the support member. The second pad is disposed under the support member at a distance from the first pad. The first electrode is connected between the first conductive type semiconductor layer and the first pad. The second electrode is connected between the bonding layer and the second pad.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.

Abstract: A touch screen panel includes a transparent substrate, a plurality of first sensing cells on the transparent substrate, the plurality of first sensing cells being connected in a first direction, a plurality of second sensing cells between the first sensing cells and insulated from the first sensing cells, the plurality of second sensing cells being connected in a second direction, a plurality of first connecting patterns connecting the first sensing cells in the first direction, a plurality of second connecting patterns intersecting the first connecting patterns and connecting the second sensing cells in the second direction, and insulating layers between the first and second connecting patterns, the insulating layers including edges with protrusions, the edges overlapping the second connecting patterns, and one or more protrusions at the edges protruding toward adjacent second sensing cells.

Abstract: A touch screen panel includes first and second substrates disposed to face each other, conductive sensing cells in a touch active area on a first surface of the first substrate that faces the second substrate, a black matrix in a non-touch active area on a first surface of the second substrate that faces the first substrate, the non-touch active area being positioned outside the touch active area, an adhesive layer between the first and second substrates, the adhesive layer joining the first and second substrates together, and an insulating layer in the touch active area on the first substrate, the insulating layer covering the conductive sensing cells and overlapping a concave portion formed on the first surface of the second substrate by the black matrix.

Abstract: A touch screen panel includes a transparent substrate, a plurality of first connection patterns on the transparent substrate, the plurality of first connection patterns being separated from one another, a plurality of first sensing cells electrically connected along a first direction to the first connection patterns, a plurality of second sensing cells disposed between the first sensing cells and insulated therefrom, the second sensing cells being connected along a second direction by second connection patterns intersecting the first connection patterns, an insulating layer between the first and second connection patterns, edges of the insulating layer being overlapped by the second connection patterns or the second sensing cells, and conductive auxiliary patterns at the edges of the insulating layer, the conductive auxiliary patterns being electrically connected to the second connection patterns and being positioned under the second connection patterns or the second sensing cells.

Abstract: A touch screen panel includes a transparent substrate, a plurality of first sensing cells on the transparent substrate, the first sensing cells being connected to each other along a first direction, a plurality of second sensing cells between the first sensing cells and insulated from the first sensing cells, the second sensing cells being connected to each other along a second direction, a plurality of first connection patterns connecting the first sensing cells along the first direction, a plurality of second connection patterns connecting the second sensing cells along the second direction, the second connection patterns intersecting the first connection patterns, an insulating layer between the first and second connection patterns, the second connection patterns crossing over the insulating layer, and a plurality of conductive auxiliary patterns on the second connection patterns and electrically connected to the second connection patterns.

Abstract: Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a conductive layer, an electrode, a light emitting structure layer disposed between the electrode and the conductive layer and comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and a light guide layer between the first semiconductor layer and the electrode.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.

Abstract: Provided are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a second electrode on the light emitting structure, and a reflective member on at least lateral surface of the second electrode.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: Provided is a substrate for fabricating a light emitting device and a method for fabricating the light emitting device. The method for fabricating the light emitting device may include forming a sacrificial layer having band gap energy less than energy of a laser irradiated on a substrate, forming a growth layer on the sacrificial layer, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the growth layer, and irradiating the laser onto the sacrificial layer to pass through the substrate, thereby to lift-off the substrate.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.

Abstract: Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.