Patents by Inventor Hwan Hui Yun
Hwan Hui Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9997666Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.Type: GrantFiled: June 30, 2016Date of Patent: June 12, 2018Assignee: LG INNOTEK CO., LTD.Inventors: Hae Jin Park, Kyoung Hoon Kim, Dong Ha Kim, Kwang Chil Lee, Jae Hun Kim, Hwan Hui Yun
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Publication number: 20170331000Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.Type: ApplicationFiled: June 30, 2016Publication date: November 16, 2017Inventors: Hae Jin PARK, Kyoung Hoon KIM, Dong Ha KIM, Kwang Chil LEE, Jae Hun KIM, Hwan Hui YUN
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Publication number: 20160322534Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.Type: ApplicationFiled: June 30, 2016Publication date: November 3, 2016Inventors: Hae Jin PARK, Kyoung Hoon KIM, Dong Ha KIM, Kwang Chil LEE, Jae Hun KIM, Hwan Hui YUN
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Patent number: 9397257Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.Type: GrantFiled: February 13, 2015Date of Patent: July 19, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Hae Jin Park, Kyoung Hoon Kim, Dong Ha Kim, Kwang chil Lee, Jae Hun Kim, Hwan Hui Yun
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Patent number: 9240533Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.Type: GrantFiled: April 3, 2015Date of Patent: January 19, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Kwang Chil Lee, Joong Seo Park, Tae Lim Lee, Woon Kyung Choi, Kyoung Hoon Kim, Hae Jin Park, Hwan Hui Yun
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Publication number: 20150214448Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.Type: ApplicationFiled: April 3, 2015Publication date: July 30, 2015Inventors: Kwang Chil LEE, Joong Seo PARK, Tae Lim LEE, Woon Kyung CHOI, Kyoung Hoon KIM, Hae Jin PARK, Hwan Hui YUN
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Publication number: 20150179878Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N(0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.Type: ApplicationFiled: February 13, 2015Publication date: June 25, 2015Inventors: Hae Jin PARK, Kyoung Hoon KIM, Dong Ha KIM, Kwang chil LEE, Jae Hun KIM, Hwan Hui YUN
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Patent number: 9029895Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.Type: GrantFiled: June 6, 2013Date of Patent: May 12, 2015Assignee: LG Innotek Co., Ltd.Inventors: Kwang chil Lee, Joong Seo Park, Tae Lim Lee, Woon Kyung Choi, Kyoung Hoon Kim, Hae Jin Park, Hwan Hui Yun
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Patent number: 9000415Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.Type: GrantFiled: May 31, 2013Date of Patent: April 7, 2015Assignee: LG Innotek Co., Ltd.Inventors: Hae Jin Park, Kyoung Hoon Kim, Dong Ha Kim, Kwang chil Lee, Jae Hun Kim, Hwan Hui Yun
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Publication number: 20140084317Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.Type: ApplicationFiled: June 6, 2013Publication date: March 27, 2014Inventors: Kwang chil LEE, Joong Seo PARK, Tae Lim LEE, Woon Kyung CHOI, Kyoung Hoon KIM, Hae Jin PARK, Hwan Hui YUN
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Publication number: 20140070165Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1?x)N (0<x<1) and a quantum well layer including AlyGa(1?y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.Type: ApplicationFiled: May 31, 2013Publication date: March 13, 2014Inventors: Hae Jin Park, Kyoung Hoon Kim, Dong Ha Kim, Kwang chil Lee, Jae Hun Kim, Hwan Hui Yun