Patents by Inventor Hwang-kyu Yun

Hwang-kyu Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9082840
    Abstract: A method for preparing a semiconductor wafer into individual semiconductor dies uses both a dicing before grinding step and/or via hole micro-fabrication step, and an adhesive coating step.
    Type: Grant
    Filed: May 6, 2014
    Date of Patent: July 14, 2015
    Assignee: Henkel IP & Holding GmbH
    Inventors: Hwang Kyu Yun, Jeffrey Leon, Raj Peddi, YounSang Kim
  • Publication number: 20140242781
    Abstract: A method for preparing a semiconductor wafer into individual semiconductor dies uses both a dicing before grinding step and/or via hole micro-fabrication step, and an adhesive coating step.
    Type: Application
    Filed: May 6, 2014
    Publication date: August 28, 2014
    Inventors: Hwang Kyu Yun, Jeffrey Leon, Raj Peddi, YounSang Kim
  • Patent number: 8753959
    Abstract: A method for preparing a semiconductor wafer into individual semiconductor dies uses both a dicing before grinding step and/or via hole micro-fabrication step, and an adhesive coating step.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: June 17, 2014
    Assignee: Henkel IP & Holding GmbH
    Inventors: Hwang Kyu Yun, Jeffrey Leon, Raj Peddi, YounSang Kim
  • Publication number: 20130011999
    Abstract: A method for preparing a semiconductor wafer into individual semiconductor dies uses both a dicing before grinding step and/or via hole micro-fabrication step, and an adhesive coating step.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 10, 2013
    Applicant: HENKEL CORPORATION
    Inventors: Hwang Kyu Yun, Jeffrey Leon, Raj Peddi, YounSang Kim
  • Patent number: 5543493
    Abstract: A method for treating a polyimide surface which includes the steps of amine-treating the polyimide surface and drying the thusly amine-treated polyimide surface. The amine-treating step is preferably carried out by immersing the polyimide in an amine solution which includes an amine and a solvent. The amine is preferably an aliphatic, aromatic, or siloxane amine. The drying step is preferably carried out a temperature of about 50.degree.-200.degree. C. The polyimide is preferably a polyimide having at least one imide functional group in its main chain, and is most preferably a polycondensate of at least one dianhydride and at least one diamine.
    Type: Grant
    Filed: July 26, 1994
    Date of Patent: August 6, 1996
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chan-eon Park, Hwang-kyu Yun, Sung-min Sim, Wan-gyun Choi