Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.

Abstract: Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.

Abstract: A computational storage device is provided. The computation storage device includes: a nonvolatile memory configured to store data; and a storage controller configured to control a plurality of applications to be executed based on the data. The storage controller includes: a processor; and a memory including a program slot configured to store a user program. The processor is configured to drive an operating system to execute the user program to control an application among the plurality of applications to perform a first operation on the data based on an event signal.

Abstract: A stretchable strain sensor may exhibit wavelength selectivity according to a thickness change of a thickness of the stretchable strain sensor, in a thickness direction extending parallel to the thickness of the stretchable strain sensor, due to elongation of the stretchable strain sensor in an elongation direction extending perpendicular to the thickness direction. The stretchable strain sensor may have an emission spectrum that changes according to strain variation of a strain on the stretchable strain sensor.

Abstract: A storage device generates and stores a key stream and a value stream by extracting from data a plurality of keys and a plurality of values respectively corresponding to the plurality of keys. The storage device includes a controller and a non-volatile memory. The controller receives from a host information about an invalid key included in the key stream together with a compaction command, and performs a compaction operation on the key stream in response to the compaction command. The non-volatile memory stores the key stream and the value stream. The controller merges the key stream with another key stream based on the information about the invalid key in the compaction operation.

Abstract: A stretchable strain sensor may exhibit wavelength selectivity according to a thickness change of a thickness of the stretchable strain sensor, in a thickness direction extending parallel to the thickness of the stretchable strain sensor, due to elongation of the stretchable strain sensor in an elongation direction extending perpendicular to the thickness direction. The stretchable strain sensor may have an emission spectrum that changes according to strain variation of a strain on the stretchable strain sensor.

Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: A flexible device includes a substrate including a first region having a first elastic modulus and a second region having a second elastic modulus that is lower than the first elastic modulus, a pixel circuit on the substrate, and a unit device electrically connected to the pixel circuit, wherein the pixel circuit includes a plurality of thin film transistors, a first portion of the plurality of thin film transistors is on the first region of the substrate, and a second portion of the plurality of thin film transistors is on the second region of the substrate.

Abstract: A black plated steel sheet includes a steel sheet and an Al—Mg—Si-based plating layer disposed on one surface or both surfaces of the steel sheet; in which the plating layer includes a black layer on the outermost surface thereof, and the black layer has a weight ratio of O to (Al+Mg+Si+O) of 0.01 to 0.6.

Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an organic auxiliary layer between the first electrode and the photoelectric conversion layer and having a higher charge mobility than a charge mobility of the photoelectric conversion layer. An organic sensor may include the photoelectric conversion device. An electronic device may include the organic sensor.

Abstract: A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.

Abstract: A computational storage device includes a non-volatile memory (NVM) device; and a storage controller configured to control the NVM device. The storage controller includes: a computation processor configured to execute an internal application to generate an internal command; a host interface circuit configured to receive a host command from an external host device, to receive the internal command from the computation processor, and to individually process the received host command and the received internal command; a flash translation layer (FTL) configured to perform an address mapping operation based on a result of the processing of the host interface circuit; and a memory interface circuit configured to control the NVM device based on the address mapping operation of the FTL.

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

Abstract: A stretchable device includes a stretchable substrate, and a plurality of optoelectronic diodes on the stretchable substrate. At least one optoelectronic diode includes a first electrode and a second electrode, and an active layer between the first electrode and the second electrode. The active layer includes a first semiconductor, a second semiconductor having different electrical characteristics from the first semiconductor, and an insulating elastomer.

Abstract: Provided are a storage device storing data on the basis of key-value and an operating method thereof, wherein the storage device separates and manages a plurality of keys and a plurality of values respectively corresponding to the plurality of keys, and includes a first controller processing a first key and a first value corresponding to the first key, a second controller processing a second key and a second value corresponding to the second key, and a nonvolatile memory storing the first key, the second key, the first value, and the second value, wherein the first key includes information about the second controller regarding a processing core for the second value processed next to the first value.

Abstract: The present exemplary embodiments relates to a negative electrode for a lithium secondary battery, a manufacturing method thereof, and a lithium secondary battery comprising the same. An exemplary embodiment may provide a negative electrode for a lithium secondary battery comprising current collector and a negative active material layer positioned on at least one surface of the current collector, and comprising a lithium metal layer, wherein the negative active material layer comprising the lithium metal layer, comprises a coating layer positioned on the current collector and comprising a metal seed, and a lithium metal layer positioned on the coating layer.

Abstract: An electronic device includes a light emitting element. An encapsulation layer is disposed on the light emitting element. The encapsulation layer includes a polymer having a molecular anisotropy greater than or equal to about 1.4. A sensor layer is disposed on the encapsulation layer. The molecular anisotropy is a ratio of a first absorbance of an infrared spectrum in an infrared spectroscopy when first polarized light that is polarized in a first direction perpendicular to a second direction is incident to the polymer to a second absorbance of an infrared spectrum in an infrared spectroscopy when second polarized light that is polarized in the second direction is incident to the polymer.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) including a substrate including a plurality of emitters forming an array region, a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer and including an oxidation region and a window region, a connector disposed on the upper mirror, a plurality of oxidation holes passing through the upper mirror and the aperture forming layer, an upper insulation layer covering the plurality of oxidation holes, and a pad electrically connected to the connector, in which at least a portion of the connector is disposed in the plurality of oxidation holes, the plurality of emitters is disposed in substantially a honeycomb shape on the substrate, and the pad is formed on one side of the substrate adjacent to the array region.