Abstract: A plasma chemical reactor includes a chamber for providing a plasma reaction space, and a cathode assembly coupled at one side to a wall surface of the chamber and supporting a substrate at the other side such that the substrate is positioned at a center inside the chamber, and installed to enable height adjustment such that the substrate can maintain a horizontal state.

Abstract: A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part.

Abstract: A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.

Abstract: A plasma chemical reactor is provided. The reactor includes a chamber, a cathode assembly, and a baffle plate. The chamber forms a plasma reaction space. The cathode assembly includes a cathode support shaft and a substrate support. The cathode support shaft is coupled at one side to a wall surface of the chamber. The substrate support is coupled to the other side of the cathode support shaft and supports the substrate. The baffle plate is out inserted and coupled to the substrate support, and has a plurality of vents arranged to be spaced apart and through formed such that reaction gas can pass through, and the vents asymmetrically arranged and formed to get a vent area smaller at an opposite side than a top side of the cathode support shaft.

Abstract: A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part.

Abstract: An apparatus for controlling the temperature of an electrostatic chuck is provided. The apparatus includes an electrostatic chuck including, as a fluid channel part for circulating a refrigerant, a first fluid channel formed in an outer circumference region of the internal and a second fluid channel formed in the whole internal region, and one or more chillers for supplying refrigerant controlled to different temperatures through the first fluid channel or the second fluid channel. The first and second fluid channels are formed in two up/down stages within the electrostatic chuck, thereby being independently capable of the temperatures of a center part and edge part of a wafer.

Abstract: A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.

Abstract: A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part.

Abstract: A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.

Abstract: Provided is an electrostatic chuck assembly for a plasma reactor. The assembly includes an electrostatic chuck, an electrostatic chuck cover ring, and a cathode assembly cover ring. The electrostatic chuck includes a body part and a protrusion part. The body part has a disk shape of a first diameter. The protrusion part is formed integrally with the body part and protrudes from the body part, and has a disk shape of a second diameter less than the first diameter. The electrostatic chuck cover ring is disposed to surround an outer circumference of the protrusion part. The cathode assembly cover ring is disposed at an upper part of the cathode assembly to surround an outer circumference of the electrostatic chuck cover ring and an outer circumference of the body part.

Abstract: A plasma chemical reactor is provided. The reactor includes a chamber, a cathode assembly, and a baffle plate. The chamber forms a plasma reaction space. The cathode assembly includes a cathode support shaft and a substrate support. The cathode support shaft is coupled at one side to a wall surface of the chamber. The substrate support is coupled to the other side of the cathode support shaft and supports the substrate. The baffle plate is out inserted and coupled to the substrate support, and has a plurality of vents arranged to be spaced apart and through formed such that reaction gas can pass through, and the vents asymmetrically arranged and formed to get a vent area smaller at an opposite side than a top side of the cathode support shaft.

Abstract: A plasma chemical reactor includes a chamber for providing a plasma reaction space, and a cathode assembly coupled at one side to a wall surface of the chamber and supporting a substrate at the other side such that the substrate is positioned at a center inside the chamber, and installed to enable height adjustment such that the substrate can maintain a horizontal state.