Abstract: A semiconductor light-emitting device having high optical extraction efficiency is provided. The semiconductor light-emitting device includes a substrate on which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are formed sequentially; an n electrode formed in an exposed part of the n-type semiconductor layer by removing parts of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer; a current spreading layer formed on the p-type semiconductor layer; a p electrode formed on the current spreading layer; and a current blocking layer formed between the p-type semiconductor layer and the current spreading layer to include a region corresponding to the p electrode.

Abstract: There are provided a semiconductor substrate configured to improve the light extraction efficiency of a light emitting device, and a light emitting device using the substrate. The light emitting device includes the substrate, a buffer layer, and a light emitting structure, and the buffer layer and the light emitting structure being sequentially stacked on the substrate. The substrate includes a plurality of lenses disposed on a top surface thereof, and the lenses have a horn shape and are configured such that the buffer layer grows both on the top surface of the substrate and lateral surfaces of the lenses.

Abstract: There are provided a semiconductor substrate configured to improve the light extraction efficiency of a light emitting device, and a light emitting device using the substrate. The light emitting device includes the substrate, a buffer layer, and a light emitting structure, and the buffer layer and the light emitting structure being sequentially stacked on the substrate. The substrate includes a plurality of lenses disposed on a top surface thereof, and the lenses have a horn shape and are configured such that the buffer layer grows both on the top surface of the substrate and lateral surfaces of the lenses.

Abstract: Provided is a semiconductor light emitting device having an improved electrode structure for uniform current density and high brightness. According to the present invention, an light emitting device can have an electrode structure configured to spread a current uniformly and efficiently throughout the entire area of the light emitting device. Therefore, current density distribution can be more uniform in the light emitting device. End parts of second conductive type auxiliary electrodes are gradually shortened in length in a direction away from a first conductive type electrode pad so that a current flowing around the first conductive type electrode can be uniform to increase optical conversion efficiency and lower a driving voltage.

Abstract: Provided is a light emitting diode package. The light emitting diode package includes a package body, a light emitting diode chip, and a package lens. The light emitting diode chip is installed in the package body. The package lens is installed in the package body to cover the light emitting diode chip, and is formed to have a shape corresponding to a radiation angle pattern of the light emitting diode chip.