Patents by Inventor HwanSoo Kim

HwanSoo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12347672
    Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide.
    Type: Grant
    Filed: April 21, 2022
    Date of Patent: July 1, 2025
    Assignee: ENTEGRIS, INC.
    Inventors: Sungsil Cho, DaHye Kim, HwanSoo Kim, SooJin Lee, Bryan C. Hendrix
  • Publication number: 20240308856
    Abstract: Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.
    Type: Application
    Filed: May 24, 2024
    Publication date: September 19, 2024
    Inventors: YoonHae Kim, Sungsil Cho, HwanSoo Kim, KieJin Park
  • Publication number: 20230088079
    Abstract: Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.
    Type: Application
    Filed: July 8, 2022
    Publication date: March 23, 2023
    Inventors: SangJin Lee, MinSeok Ryu, Sangbum Han, SeongCheol Kim, YoonHae Kim, KieJin Park, YeRim Yeon, Sungsil Cho, HwanSoo Kim, JoongKi CHOI
  • Publication number: 20230080718
    Abstract: Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.
    Type: Application
    Filed: July 7, 2022
    Publication date: March 16, 2023
    Inventors: YoonHae Kim, Sungsil Cho, HwanSoo Kim, KieJin Park
  • Publication number: 20220359192
    Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide.
    Type: Application
    Filed: April 21, 2022
    Publication date: November 10, 2022
    Inventors: Sungsil Cho, DaHye Kim, HwanSoo Kim, SooJin Lee, Bryan C. Hendrix