Abstract: The present disclosure discloses a semiconductor structure having an insulating layer disposed on a wafer active surface of a semiconductor wafer for covering the wafer active surface. The insulating layer may be a protective layer in some embodiments and a cover layer in other embodiments. The insulating layer has via openings to expose contact pads for leading out electrical connections. In particular, the via openings are formed by a multi-step etching process (such as a two-step etching process) without damaging the contact pads. The two-step etching process includes a first laser etching process using normal pulse (P) and normal energy to form partial via openings in the cover layer. The second etching process includes either a laser etching process using low P and low E or a plasma etching process. The second etching process avoids damaging the contact pads.

Abstract: The present disclosure provides a chip package for power modules including at least one semiconductor die; a driver circuit for controlling the at least one semiconductor die; a protective layer formed on a die active surface of the at least one die and a driver active surface of the driver circuit; a metal unit having at least one metal feature; and a molding layer for encapsulating the at least one semiconductor die, the driver circuit, the protective layer and metal unit. The chip package is connected with an external circuit via the at least one metal feature. The present disclosure also provides a method of making the chip packages for power modules.

Abstract: A die bonding apparatus having: a carrier support unit having at least one support element defining a supporting plane and a carrier holder operable to support the carrier panel on a side of the supporting plane with the carrier panel being parallel to the supporting plane, a wafer feed unit having a wafer holder operable to hold a diced wafer in a manner so as to space the diced wafer apart from the supporting plane defined by the at least one support element of the carrier support unit and orient the diced wafer with an exposed surface of the diced wafer facing the side of the supporting plane to which the carrier panel is supported, and a die transfer module disposed between the carrier support unit and the wafer feed unit, the die transfer module operable to transfer a die from the diced wafer to the carrier panel.

Abstract: A semiconductor structure for manufacturing a semiconductor package device is provided. The semiconductor structure includes a carrier and a dielectric layer. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer. The dielectric layer is formed on the first surface of the carrier. The carrier supports the dielectric layer.

Abstract: The present invention provides a semiconductor substrate (105, 105a) comprising two or more layers of built-up structural layers (120, 220) formed on a sacrificial carrier (110). Each built-up structural layer, comprising a conductor trace layer (114a,) and an interconnect (118a, 218a), is molded in a resin molding compound. A top surface of the molded compound is abrasively ground and then deposited with an adhesion layer (123, 124, 224). A multi-layer substrate (105, 105a) is then obtained after an outermost conductor trace layer (128a, 228a) is formed on the adhesion layer and the carrier (110) or reinforcing ring (110b) is removed.

Abstract: A semiconductor structure for manufacturing a semiconductor package device is provided. The semiconductor structure includes a carrier and a dielectric layer. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer. The dielectric layer is formed on the first surface of the carrier. The carrier supports the dielectric layer.

Abstract: The present invention provides a semiconductor substrate (105, 105a) comprising two or more layers of built-up structural layers (120, 220) formed on a sacrificial carrier (110). Each built-up structural layer, comprising a conductor trace layer (114a,) and an interconnect (118a, 218a), is molded in a resin molding compound. A top surface of the molded compound is abrasively ground and then deposited with an adhesion layer (123, 124, 224). A multi-layer substrate (105, 105a) is then obtained after an outermost conductor trace layer (128a, 228a) is formed on the adhesion layer and the carrier (110) or reinforcing ring (110b) is removed.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a carrier. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer.

Abstract: The present invention provides a semiconductor substrate (105, 105a) comprising two or more layers of built-up structural layers (120, 220) formed on a sacrificial carrier (110). Each built-up structural layer, comprising a conductor trace layer (114a,) and an interconnect (118a, 218a), is molded in a resin molding compound. A top surface of the molded compound is abrasively ground and then deposited with an adhesion layer (123, 124, 224). A multi-layer substrate (105, 105a) is then obtained after an outermost conductor trace layer (128a, 228a) is formed on the adhesion layer and the carrier (110) or reinforcing ring (110b) is removed.

Abstract: A method for fabricating a flip-chip semiconductor package. The method comprises processing a semiconductor device, for example a semiconductor chip and processing a device carrier, for example a substrate. The semiconductor device comprises bump structures formed on a surface thereof. The substrate comprises bond pads formed on a surface thereof. Processing of the semiconductor chip results in heating of the semiconductor chip to a chip process temperature. The chip process temperature melts solder portions on the bump structures Processing of the substrate results in heating of the substrate to a substrate process temperature. The method comprises spatially aligning the semiconductor chip in relation to the substrate to correspondingly align the bump structures in relation to the bump pads. The semiconductor chip is then displaced towards the substrate for abutting the bump structures of the semiconductor chip with the bond pads of the substrate to thereby form bonds therebetween.

Abstract: The present invention provides a semiconductor substrate (105, 105a) comprising two or more layers of built-up structural layers (120, 220) formed on a sacrificial carrier (110). Each built-up structural layer, comprising a conductor trace layer (114a,) and an interconnect (118a, 218a), is molded in a resin molding compound. A top surface of the molded compound is abrasively ground and then deposited with an adhesion layer (123, 124, 224). A multi-layer substrate (105, 105a) is then obtained after an outermost conductor trace layer (128a, 228a) is formed on the adhesion layer and the carrier (110) or reinforcing ring (110b) is removed.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a carrier. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer is covered by the exterior clad layer.

Abstract: The invention discloses a package structure including a semiconductor device, a first protection layer, a second protection layer and at least one conductive bump. The semiconductor device has at least one pad. The first protection layer is disposed on the semiconductor device and exposes the pad. The second protection layer, disposed on the first protection layer, has at least one first opening and at least one second opening. The first opening exposes a partial surface of the pad. The second opening exposes a partial surface of the first protection layer. The conductive bump, opposite to the pad, is disposed on the second protection layer and coupled to the pad through the first openings.

Abstract: A method for fabricating a flip-chip semiconductor package. The method comprises processing a semiconductor device, for example a semiconductor chip and processing a device carrier, for example a substrate. The semiconductor device comprises bump structures formed on a surface thereof. The substrate comprises bond pads formed on a surface thereof. Processing of the semiconductor chip results in heating of the semiconductor chip to a chip process temperature. The chip process temperature melts solder portions on the bump structures Processing of the substrate results in heating of the substrate to a substrate process temperature. The method comprises spatially aligning the semiconductor chip in relation to the substrate to correspondingly align the bump structures in relation to the bump pads. The semiconductor chip is then displaced towards the substrate for abutting the bump structures of the semiconductor chip with the bond pads of the substrate to thereby form bonds therebetween.

Abstract: A water jet handler (200) has a loading location (205), a cutting location (210), and an unloading location (215); and two movable mounts (240 and a 245). As a first movable mount (240) receives a molded substrate at the loading location (205), and transports it to the cutting location (210), a second movable mount (245) transports singulated semiconductor packages of a previously singulated molded substrate from the cutting location (210) to the unloading location (215). As the molded substrate on the first movable mount (240) is cut in the X direction (232) by a water jet, the singulated semiconductor packages are unloaded. The molded substrate is then transferred to the second movable mount (245) on which it is cut in the Y direction (272) to produce singulated semiconductor packages, as the first movable mount (240) returns to the loading location (205), when another molded substrate is loaded.

Abstract: The present invention provides a thermal bonding process for chip packaging. In accordance with an aspect of the invention, there is provided an approach to solve the problems caused by the different CTEs between the die and the substrate. It discloses an improved thermal bonding process for forming pillar-shaped interconnection, which controls the thermal expansion of the semiconductor die and the substrate by applying differential heating temperature to the two, thereby minimizing the misalignment between the die and the substrate, overcoming the stresses imposed on the interconnection and allowing more reliable and accurate packaging.

Abstract: A method for forming semiconductor packages is disclosed. The method involves providing a support substrate and forming at least one conductive layer thereon. The method also includes coupling the at least one conductive layer to a support face of a film substrate for securing the at least one conductive layer to the support face and removing the support substrate from the at least one conductive layer. The at least one interconnector is adhered to the film substrate for forming an interposer. The method further involves bonding a integrated circuit chip to the at least one conductive layer of the interposer and disposing a compound over the support face to thereby encapsulate the integrated circuit chip and the least one conductive layer for forming an encapsulated package therefrom. Portions of the at least one conductive layer is then exposed by removing the film substrate from the encapsulated package.

Abstract: High performance integrated circuits generally have high heat generating capabilities. During powering up of these integrated circuits under typical operating conditions, heat generation is unavoidably accelerated. When the accumulated heat is not adequately dissipated, the high temperature of the integrated circuits will lead to overheating which in turn, causes irreversible damage to the integrated circuits. Conventional thermal management methods using bumps of a ball grid array (BGA) as heat paths to a heat sink has low thermal transmissibility due to the substantially spherical shape thereof. Metallic columns formed by vias in substrates have dimensional restrictions that also limit thermal transmissibility thereof. Coupling of semiconductor device directly to a heat sink formed in a substrate will also require undesirable structural modifications to the substrate, for example a concavity formed therein, for accommodating the integrated circuit therewithin.

Abstract: A predetermined amount of solder (315) is deposited on the free ends of copper posts (310) extending from die pads of a semiconductor die (305). The solder (315) is coated with flux (320) and the semiconductor die (305) is placed on a leadframe (100) with the solder deposits (315) abutting interconnect locations (335) on inner lead portions (101). When reflowed, the solder deposits (315) melt and with the assistance of the flux (320) forms solder interconnects between the free ends of the copper posts (310) and the interconnect locations (335). Due to the predetermined amount of solder (315) deposited on the free ends of the copper posts (310), the molten solder (315) tends not to flow away from the interconnect location (335). Thus, advantageously allowing a substantial portion of the solder deposit (315) to remain at the interconnect locations (335) to form solder interconnects.

Abstract: A predetermined amount of solder (315) is deposited on the free ends of copper posts (310) extending from die pads of a semiconductor die (305). The solder (315) is coated with flux (320) and the semiconductor die (305) is placed on a leadframe (100) with the solder deposits (315) abutting interconnect locations (335) on inner lead portions (101). When reflowed, the solder deposits (315) melt and with the assistance of the flux (320) forms solder interconnects between the free ends of the copper posts (310) and the interconnect locations (335). Due to the predetermined amount of solder (315) deposited on the free ends of the copper posts (310), the molten solder (315) tends not to flow away from the interconnect location (335). Thus, advantageously allowing a substantial portion of the solder deposit (315) to remain at the interconnect locations (335) to form solder interconnects.