Patents by Inventor Hwi-Chan Jun

Hwi-Chan Jun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10763256
    Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: September 1, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hwi-chan Jun, Heon-jong Shin, In-chan Hwang, Jae-ran Jang
  • Publication number: 20200235096
    Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 23, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hwi-chan JUN, Heon-jong SHIN, In-chan HWANG, Jae-ran JANG
  • Patent number: 10665588
    Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: May 26, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hwi-chan Jun, Heon-jong Shin, In-chan Hwang, Jae-ran Jang
  • Patent number: 10658288
    Abstract: A semiconductor device includes a substrate having a device isolation region defining an active region. An active fin is positioned in the active region. A gate structure overlaps the active fin along a direction orthogonal to an upper surface of the substrate and extends in a second direction intersecting the first direction. A source/drain region is disposed on the active fin. A contact plug is connected to the source/drain region and overlaps the active fin. A metal via is positioned at a first level above the substrate higher than an upper surface of the contact plug and spaced apart from the active fin. A metal line is positioned at a second level above the substrate, higher than the first level and connected to the metal via. A via connection layer extends from an upper portion of the contact plug and is connected to the metal via.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: May 19, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seul Ki Hong, Heon Jong Shin, Hwi Chan Jun, Min Chan Gwak
  • Publication number: 20200126858
    Abstract: A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 23, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Chan GWAK, Hwi Chan JUN, Heon Jong SHIN, So Ra YOU, Sang Hyun LEE, In Chan HWANG
  • Patent number: 10553484
    Abstract: A semiconductor device includes a plurality of active regions spaced apart from each other and extending linearly in parallel on a substrate. A gate electrode crosses the plurality of active regions, and respective drain regions are on and/or in respective ones of the active regions on a first side of the gate electrode and respective source regions are on and/or in respective ones of the active regions on a second side of the gate electrode. A drain plug is disposed on the drain regions and a source plug is disposed on the source regions. A gate plug is disposed on the gate electrode between the drain plug and the source plug such that a straight line passing through a center of the drain plug and a center of the source plug intersects the gate plug.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: February 4, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min Chan Gwak, Hwi Chan Jun, Heon Jong Shin, So Ra You, Sang Hyun Lee, In Chan Hwang
  • Publication number: 20200027875
    Abstract: A semiconductor device includes a substrate including a first region and a second region, an active gate structure on the substrate in the first region, a dummy gate structure on the substrate in the second region, a source/drain on the substrate in the first region at each of opposite sides of the active gate structure, a plurality of first conductive contacts respectively connected to the active gate structure and the source/drain, a resistive structure on the dummy gate structure in the second region, a plurality of second conductive contacts respectively connected to the plurality of first conductive contacts and the resistive structure, and an etch stop layer between the dummy gate structure and the resistive structure. The etch stop layer includes a lower etch stop layer and an upper etch stop layer, which are formed of different materials.
    Type: Application
    Filed: January 25, 2019
    Publication date: January 23, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Seul-ki HONG, Hwi-chan JUN, Hyun-soo KIM, Dae-chul AHN, Myung YANG
  • Publication number: 20190378926
    Abstract: A semiconductor device includes a first impurity region, a channel pattern, a second impurity region, a gate structure, a first contact pattern, a second contact pattern and a spacer. The first impurity region may be formed on a substrate. The channel pattern may protrude from an upper surface of the substrate. The second impurity region may be formed on the channel pattern. The gate structure may be formed on a sidewall of the channel pattern and the substrate adjacent to the channel pattern, and the gate structure may include a gate insulation pattern and a gate electrode. The first contact pattern may contact an upper surface of the second impurity region. The second contact pattern may contact a surface of the gate electrode. The spacer may be formed between the first and second contact patterns. The spacer may surround a portion of a sidewall of the second contact pattern, and the spacer may contact a sidewall of each of the first and second contact patterns.
    Type: Application
    Filed: December 19, 2018
    Publication date: December 12, 2019
    Inventors: Hyun-Seung Song, Hyo-Jin Kim, Kyoung-Mi Park, Hwi-Chan Jun, Seung-Seok Ha
  • Publication number: 20190371724
    Abstract: A semiconductor device may include a plurality of active patterns and a plurality of gate structure on a substrate, a first insulating interlayer covering the active patterns and the gate structures, a plurality of first contact plugs extending through the first insulating interlayer, a plurality of second contact plugs extending through the first insulating interlayer, and a first connecting pattern directly contacting a sidewall of at least one contact plug selected from the first and second contact plugs. Each of gate structures may include a gate insulation layer, a gate electrode and a capping pattern. Each of first contact plugs may contact the active patterns adjacent to the gate structure. Each of the second contact plugs may contact the gate electrode in the gate structures. An upper surface of the first connecting pattern may be substantially coplanar with upper surfaces of the first and second contact plugs.
    Type: Application
    Filed: December 21, 2018
    Publication date: December 5, 2019
    Inventors: Hwi-Chan Jun, Seul-ki Hong, Hyun-soo Kim, Sang-hyun Lee
  • Publication number: 20190279930
    Abstract: A semiconductor device includes a substrate having a device isolation region defining an active region. An active fin is positioned in the active region. A gate structure overlaps the active fin along a direction orthogonal to an upper surface of the substrate and extends in a second direction intersecting the first direction. A source/drain region is disposed on the active fin. A contact plug is connected to the source/drain region and overlaps the active fin. A metal via is positioned at a first level above the substrate higher than an upper surface of the contact plug and spaced apart from the active fin. A metal line is positioned at a second level above the substrate, higher than the first level and connected to the metal via. A via connection layer extends from an upper portion of the contact plug and is connected to the metal via.
    Type: Application
    Filed: May 23, 2019
    Publication date: September 12, 2019
    Inventors: SEUL KI HONG, Heon Jong SHIN, Hwi Chan JUN, Min Chan GWAK
  • Patent number: 10340219
    Abstract: A semiconductor device includes a substrate having a device isolation region defining an active region. An active fin is positioned in the active region. A gate structure overlaps the active fin along a direction orthogonal to an upper surface of the substrate and extends in a second direction intersecting the first direction. A source/drain region is disposed on the active fin. A contact plug is connected to the source/drain region and overlaps the active fin. A metal via is positioned at a first level above the substrate higher than an upper surface of the contact plug and spaced apart from the active fin. A metal line is positioned at a second level above the substrate, higher than the first level and connected to the metal via. A via connection layer extends from an upper portion of the contact plug and is connected to the metal via.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: July 2, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seul Ki Hong, Heon Jong Shin, Hwi Chan Jun, Min Chan Gwak
  • Publication number: 20190131171
    Abstract: A semiconductor device includes a plurality of active regions spaced apart from each other and extending linearly in parallel on a substrate. A gate electrode crosses the plurality of active regions, and respective drain regions are on and/or in respective ones of the active regions on a first side of the gate electrode and respective source regions are on and/or in respective ones of the active regions on a second side of the gate electrode. A drain plug is disposed on the drain regions and a source plug is disposed on the source regions. A gate plug is disposed on the gate electrode between the drain plug and the source plug such that a straight line passing through a center of the drain plug and a center of the source plug intersects the gate plug.
    Type: Application
    Filed: April 23, 2018
    Publication date: May 2, 2019
    Inventors: Min Chan Gwak, HWI CHAN JUN, HEON JONG SHIN, SO RA YOU, SANG HYUN LEE, IN CHAN HWANG
  • Publication number: 20190122988
    Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.
    Type: Application
    Filed: December 12, 2018
    Publication date: April 25, 2019
    Inventors: Hyo-Jin KIM, Chang-Hwa KIM, Hwi-Chan JUN, Chul-Hong PARK, Jae-Seok YANG, Kwan-Young CHUN
  • Publication number: 20190057907
    Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.
    Type: Application
    Filed: October 24, 2018
    Publication date: February 21, 2019
    Inventors: HWI CHAN JUN, Chang Hwa Kim, Dae Won Ha
  • Patent number: 10177093
    Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: January 8, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyo-Jin Kim, Chang-Hwa Kim, Hwi-Chan Jun, Chul-Hong Park, Jae-Seok Yang, Kwan-Young Chun
  • Publication number: 20180358293
    Abstract: A semiconductor device includes a substrate having a device isolation region defining an active region. An active fin is positioned in the active region. A gate structure overlaps the active fin along a direction orthogonal to an upper surface of the substrate and extends in a second direction intersecting the first direction, A source/drain region is disposed on the active fin. A contact plug is connected to the source/drain region and overlaps the active fin. A metal via is positioned at a first level above the substrate higher than an upper surface of the contact plug and spaced apart from the active fin. A metal line is positioned at a second level above the substrate, higher than the first level and connected to the metal via. A via connection layer extends from an upper portion of the contact plug and is connected to the metal via.
    Type: Application
    Filed: January 11, 2018
    Publication date: December 13, 2018
    Inventors: Seul Ki HONG, Heon Jong Shin, Hwi Chan Jun, Min Chan Gwak
  • Patent number: 10153212
    Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: December 11, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hwi Chan Jun, Chang Hwa Kim, Dae Won Ha
  • Publication number: 20180261596
    Abstract: An integrated circuit device is provided as follows. A fin-type active region extends on a substrate in a first horizontal direction. A gate line extends on the fin-type active region in a second horizontal direction intersecting the first horizontal direction. A source/drain region is disposed in the fin-type active region at one side of the gate line. An insulating cover extends parallel to the substrate, with the gate line and the source/drain region arranged between the insulating cover and the substrate. A source/drain contact that vertically extends through the insulating cover has a first sidewall covered with the insulating cover and an end connected to the source/drain region. A fin isolation insulating unit vertically extends through the insulating cover into the fin-type active region. The source/drain region is arranged between the fin isolation insulating unit and the gate line.
    Type: Application
    Filed: November 9, 2017
    Publication date: September 13, 2018
    Inventors: Hwi-chan JUN, Heon-jong SHIN, In-chan HWANG, Jae-ran JANG
  • Publication number: 20180096935
    Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.
    Type: Application
    Filed: April 26, 2017
    Publication date: April 5, 2018
    Inventors: Hyo-Jin KIM, Chang-Hwa KIM, Hwi-Chan JUN, Chul-Hong PARK, Jae-Seok YANG, Kwan-Young CHUN
  • Publication number: 20180047634
    Abstract: A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region. First and second source/drain regions and first and second gate electrodes are on the lower active region. The first and second source/drain regions are adjacent to each other. First and second gate capping patterns are on the first and second gate electrodes, respectively. First and second contact structures are on the first and second source/drain regions, respectively. A lower insulating pattern is between the first and second source/drain regions. An upper insulating pattern is between the first and second contact structures. Silicon oxide has etching selectivity with respect to an insulating material which the upper insulating pattern, the first gate capping pattern, and the second gate capping pattern are formed of.
    Type: Application
    Filed: March 3, 2017
    Publication date: February 15, 2018
    Inventors: HWI CHAN JUN, CHANG HWA KIM, DAE WON HA