Patents by Inventor Hwi-Hyeon OH

Hwi-Hyeon OH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of manufacturing semiconductor devices including impurity regions
    Patent number: 9911612
    Abstract: In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (11B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: March 6, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Choong-Yeol Kim, Myung-Beom Park, Han-Gyul Ko, Hwi-Hyeon Oh, Hye-Young Jin
  • METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING IMPURITY REGIONS
    Publication number: 20170004971
    Abstract: In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (11B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.
    Type: Application
    Filed: March 2, 2016
    Publication date: January 5, 2017
    Inventors: Choong-Yeol KIM, Myung-Beom PARK, Han-Gyul KO, Hwi-Hyeon OH, Hye-Young JIN