Abstract: A negative bit line write assist system includes an array voltage supply and a static random access memory (SRAM) cell that is coupled to the array voltage supply and controlled by bit lines during a write operation. Additionally, the negative bit line write assist system includes a bit line voltage unit that is coupled to the SRAM cell, wherein a distributed capacitance is controlled by a write assist command to provide generation of a negative bit line voltage during the write operation. A negative bit line write assist method is also provided.

Abstract: A flip-flop element is configured to include FinFET technology transistors with a mix of threshold voltage levels. The data input path includes FinFET transistors configured with high voltage thresholds (HVT). The clock input path includes transistors configured with standard voltage thresholds (SVT). By including FinFET transistors with SVT thresholds in the clock signal path, the Miller capacitance of the clock signal path is reduced relative to HVT FinFET transistors, leading to lower rise time and correspondingly lower hold time. By including HVT threshold devices in the data input path, the flip-flop element attains high speed and low power operation. By including SVT threshold devices in the clock signal path, the flip-flop element achieves faster switching times in the clock signal path.

Abstract: Mitigating external influences on long signal lines. In accordance with an embodiment of the present invention, a column of a memory array includes first and second transistors configured to pull up the bit line of the column. The column includes a third transistor configured to selectively pull up the bit line of the column responsive to a level of the inverted bit line of the column and a fourth transistor configured to selectively pull up the inverted bit line of the column responsive to a level of the bit line of the column. The column further includes fifth and sixth transistors configured to selectively pull up the bit line and inverted bit line of the column responsive to the clamp signal and a seventh transistor configured to selectively couple the bit line of the column and the inverted bit line of the column responsive to the clamp signal.

Abstract: A flip-flop element is configured to include FinFET technology transistors with a mix of threshold voltage levels. The data input path includes FinFET transistors configured with high voltage thresholds (HVT). The clock input path includes transistors configured with standard voltage thresholds (SVT). By including FinFET transistors with SVT thresholds in the clock signal path, the Miller capacitance of the clock signal path is reduced relative to HVT FinFET transistors, leading to lower rise time and correspondingly lower hold time. By including HVT threshold devices in the data input path, the flip-flop element attains high speed and low power operation. By including SVT threshold devices in the clock signal path, the flip-flop element achieves faster switching times in the clock signal path.

Abstract: A static random access memory (SRAM) cell includes a storage unit configured to store a data bit in a storage node. The SRAM cell further includes an access unit coupled to the storage unit. The access unit is configured to transfer current to the storage node when a word line is asserted. The SRAM cell further includes a row header configured to provide current from a power supply when the word line is not asserted, and to not provide current from the power supply when the word line is asserted. The SRAM cell further includes a column header configured to provide current from a power supply when a write column line is not asserted, and to not provide current from the power supply when the write column line is asserted.

Abstract: Low clocking power flip-flop. In accordance with a first embodiment of the present invention, a flip-flop electronic circuit includes a master latch coupled to a slave latch in a flip-flop configuration. The flip-flop electronic circuit also includes a clock control circuit for comparing an input to the master latch with an output of the slave latch, and responsive to the comparing, blocking a clock signal to the master latch and the slave latch when the flip-flop electronic circuit is in a quiescent condition.

Abstract: A subsystem configured to select the power supply to a static random access memory cell compares the level of a dedicated memory supply voltage to the primary system supply voltage. The subsystem then switches the primary system supply to the SRAM cell when the system voltage is higher than the memory supply voltage with some margin. When the system voltage is lower than the memory supply voltage, with margin, the subsystem switches the memory supply to the SRAM cell. When the system voltage is comparable to the memory supply, the subsystem switches the system voltage to the SRAM cell if performance is a prioritized consideration, but switches the memory supply to the SRAM cell if power reduction is a prioritized consideration. In this manner, the system achieves optimum performance without incurring steady state power losses and avoids timing issues in accessing memory.

Abstract: In various embodiments, a memory cell and a memory are provided. The memory cell comprises a Static Random Access Memory (SRAM) cell including a reset-set (RS) flip-flop and a Read Only Memory (ROM) cell being connected (or coupled) to the SRAM cell to set logic states of internal latch nodes of the RS flip-flop when the ROM cell is triggered. The size of the memory cells proposed in an embodiment of the invention is much smaller than the sum of the size of ROM cells and the size of SRAM cells with the capacity of the memory cells same as the sum of the capacity of the ROM cells and the capacity of the SRAM cells.

Abstract: A subsystem configured to select the power supply to a static random access memory cell compares the level of a dedicated memory supply voltage to the primary system supply voltage. The subsystem then switches the primary system supply to the SRAM cell when the system voltage is higher than the memory supply voltage with some margin. When the system voltage is lower than the memory supply voltage, with margin, the subsystem switches the memory supply to the SRAM cell. When the system voltage is comparable to the memory supply, the subsystem switches the system voltage to the SRAM cell if performance is a prioritized consideration, but switches the memory supply to the SRAM cell if power reduction is a prioritized consideration. In this manner, the system achieves optimum performance without incurring steady state power losses and avoids timing issues in accessing memory.

Abstract: Low clocking power flip-flop. In accordance with a first embodiment of the present invention, a flip-flop electronic circuit includes a master latch coupled to a slave latch in a flip-flop configuration. The flip-flop electronic circuit also includes a clock control circuit for comparing an input to the master latch with an output of the slave latch, and responsive to the comparing, blocking a clock signal to the master latch and the slave latch when the flip-flop electronic circuit is in a quiescent condition.

Abstract: An SRAM clock circuit and an SRAM. In one embodiment, the SRAM clock circuit includes: (1) a plurality of transistor stacks optionally serially electrically couplable to form a configurable delay path through which a clock signal is buffered, and (2) a delay path select circuit respectively electrically coupled between pairs of the plurality of transistor stacks and operable to selectively electrically couple the plurality of transistor stacks to a base delay path, thereby activating the configurable delay path based on a desired delay.

Abstract: A hybrid write-assist memory system includes an array voltage supply and a static random access memory (SRAM) cell that is controlled by bit lines and a word line and employs a separable cell supply voltage coupled to the array voltage supply. Additionally, the hybrid write-assist memory system includes a supply voltage droop unit that is coupled to the SRAM cell and provides a voltage reduction of the separable cell supply voltage during a write operation. Also, the hybrid write-assist memory system includes a negative bit line unit that is coupled to the supply voltage droop unit and provides a negative bit line voltage concurrently with the voltage reduction of the separable cell supply voltage during the write operation. A method of operating a hybrid write-assist memory system is also provided.

Abstract: A flip-flop and a method of receiving a digital signal from an asynchronous domain. In one embodiment, the flip-flop includes: (1) a first loop coupled to a flip-flop input and having first and second stable states and (2) a second loop coupled to the first loop and having the first and second stable states, properties of cross-coupled inverters in the first and second loops creating a metastable state skewed toward the first stable state in the first loop and skewed toward the second stable state in the second loop. Certain embodiments of the flip-flop have lower time constant and thus a higher Mean Time Between Failure (MTBF).

Abstract: An SRAM clock circuit and an SRAM. In one embodiment, the SRAM clock circuit includes: (1) a plurality of transistor stacks optionally serially electrically couplable to form a configurable delay path through which a clock signal is buffered, and (2) a delay path select circuit respectively electrically coupled between pairs of the plurality of transistor stacks and operable to selectively electrically couple the plurality of transistor stacks to a base delay path, thereby activating the configurable delay path based on a desired delay.

Abstract: Disclosed are devices, systems and/or methods relating to an eight transistor (8T) static random access memory (SRAM) cell, according to one or more embodiments. In one embodiment, an SRAM storage cell is disclosed comprising a word line, a write column select line, a cross-coupled data latch, and a first NMOS switch device serially coupled to a second NMOS switch device. In this embodiment, the gate node of the first NMOS switch device is coupled to the word line, a source node of the first NMOS switch device is coupled to the cross-coupled data latch, a gate node of the second NMOS switch device is coupled to the write column select line, and a source node of the second NMOS switch device is coupled to the cross-coupled data latch.

Abstract: A configurable delay circuit and a method of clock buffering. One embodiment of the configurable delay circuit includes: (1) a first delay stage electrically couplable in series to a second delay stage, the first delay stage and the second delay stage each having an input port electrically coupled to a signal source, and (2) a delay path select circuit electrically coupled between the first delay stage and the second delay stage, and operable to select between a delay path including the first delay stage and another delay path including the first delay stage and the second delay stage.

Abstract: A memory read system includes a memory column having a plurality of dual port memory cells that are controlled by separate read word lines and a read bit line structure organized into upper and lower read bit line portions. Additionally, the memory read system also includes a pseudo-differential memory read unit coupled to the read bit line structure, wherein the upper and lower read bit line portions respectively control corresponding upper and lower local bit lines to provide a global bit line for the memory column. A method of reading a memory is also included.

Abstract: A scan flip-flop circuit comprises a scan input sub-circuit and a selection sub-circuit. The scan input sub-circuit is configured to receive a scan input signal and a scan enable signal and, when the scan enable signal is activated, generate complementary scan input signals representing the scan input signal that are delayed relative to a transition of a clock input signal between two different logic levels. The selection sub-circuit is coupled to the scan input sub-circuit and configured to receive the complementary scan input signals and, based on the scan enable signal, output an inverted version of either the scan input signal or a data signal as a first selected input signal.

Abstract: A flip-flop and a method of receiving a digital signal from an asynchronous domain. In one embodiment, the flip-flop includes: (1) a first loop coupled to a flip-flop input and having first and second stable states and (2) a second loop coupled to the first loop and having the first and second stable states, properties of cross-coupled inverters in the first and second loops creating a metastable state skewed toward the first stable state in the first loop and skewed toward the second stable state in the second loop. Certain embodiments of the flip-flop have lower time constant and thus a higher Mean Time Between Failure (MTBF).

Abstract: A negative bit line write assist system includes an array voltage supply and a static random access memory (SRAM) cell that is coupled to the array voltage supply and controlled by bit lines during a write operation. Additionally, the negative bit line write assist system includes a bit line voltage unit that is coupled to the SRAM cell, wherein a distributed capacitance is controlled by a write assist command to provide generation of a negative bit line voltage during the write operation. A negative bit line write assist method is also provided.