Patents by Inventor Hyangmi JUNG

Hyangmi JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11125895
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: September 21, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kohei Nakayama, Fumihiko Aiga, Go Kawata, Isao Takasu, Yuko Nomura, Satomi Taguchi, Hyangmi Jung, Atsushi Wada, Rei Hasegawa
  • Patent number: 10950810
    Abstract: A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: March 16, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takeshi Gotanda, Hyangmi Jung
  • Patent number: 10930861
    Abstract: According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 ?m or more.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: February 23, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao Takasu, Hyangmi Jung, Kohei Nakayama, Yuko Nomura, Rei Hasegawa
  • Patent number: 10840465
    Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: November 17, 2020
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi Jung, Satomi Taguchi, Isao Takasu, Yuko Nomura, Rei Hasegawa
  • Patent number: 10761222
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: September 1, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kohei Nakayama, Fumihiko Aiga, Go Kawata, Isao Takasu, Yuko Nomura, Satomi Taguchi, Hyangmi Jung, Atsushi Wada, Rei Hasegawa
  • Publication number: 20200091451
    Abstract: A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.
    Type: Application
    Filed: November 21, 2019
    Publication date: March 19, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takeshi Gotanda, Hyangmi Jung
  • Publication number: 20200091440
    Abstract: According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 ?m or more.
    Type: Application
    Filed: March 5, 2019
    Publication date: March 19, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao TAKASU, Hyangmi JUNG, Kohei NAKAYAMA, Yuko NOMURA, Rei HASEGAWA
  • Publication number: 20200035934
    Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.
    Type: Application
    Filed: March 5, 2019
    Publication date: January 30, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi JUNG, Satomi TAGUCHI, Isao TAKASU, Yuko NOMURA, Rei Hasegawa
  • Patent number: 10446771
    Abstract: According to one embodiment, a radiation detector includes first, and second conductive layers, and an organic layer. The organic layer is provided between the first and second conductive layers. A first thickness of the organic layer along a first direction from the second conductive layer toward the first conductive layer is 1 ?m or more. The organic layer includes a first compound of a first conductivity type, and a second compound of a second conductivity type. A first value of (0.9·?)/(w1·cos ?1) for a first peak of X-ray analysis of the organic layer is not less than 13 nm and not more than 19 nm. The first value is obtained from a first Bragg angle ?1 (radians), a first full width at half maximum w1 (radians) of the 2?1 peak, and an X-ray wavelength ? (nm). The 2?1 is not less than 0.0750 radians and not more than 0.1100 radians.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: October 15, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hyangmi Jung, Yuko Nomura, Satomi Taguchi
  • Patent number: 10446757
    Abstract: An solar cell of an embodiment includes a first electrode, an electron transport layer containing a metal oxide, a self-assembled monolayer, a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and a second electrode. The self-assembled monolayer includes a fullerene-containing compound having a fullerene portion including a fullerene or a fullerene derivative, an absorption group to the metal oxide, and a bond group bonding the fullerene portion and the absorption group. The bond group contains a bivalent aromatic hydrocarbon group and a bivalent organic group which includes a carbon atom chain having 1 to 18 single-bonded carbon(s) or an atom chain in which a part of the carbon atom chain is substituted by at least one element selected from oxygen, nitrogen, and sulfur, as a main chain.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: October 15, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi Jung, Takeshi Gotanda, Kenji Todori
  • Publication number: 20190285759
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.
    Type: Application
    Filed: September 6, 2018
    Publication date: September 19, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kohei NAKAYAMA, Fumihiko AIGA, Go KAWATA, lsao TAKASU, Yuko NOMURA, Satomi TAGUCHI, Hyangmi JUNG, Atsushi WADA, Rei HASEGAWA
  • Patent number: 10403838
    Abstract: A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: September 3, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hyangmi Jung, Atsuko Iida, Takeshi Gotanda, Hideyuki Nakao, Shigehiko Mori, Kenji Todori
  • Publication number: 20190265370
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.
    Type: Application
    Filed: September 5, 2018
    Publication date: August 29, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kohei Nakayama, Fumihiko Aiga, Go Kawata, Isao Takasu, Yuko Nomura, Satomi Taguchi, Hyangmi Jung, Atsushi Wada, Rei Hasegawa
  • Publication number: 20190148659
    Abstract: According to one embodiment, a radiation detector includes first, and second conductive layers, and an organic layer. The organic layer is provided between the first and second conductive layers. A first thickness of the organic layer along a first direction from the second conductive layer toward the first conductive layer is 1 ?m or more. The organic layer includes a first compound of a first conductivity type, and a second compound of a second conductivity type. A first value of (0.9·?)/(w1·cos ?1) for a first peak of X-ray analysis of the organic layer is not less than 13 nm and not more than 19 nm. The first value is obtained from a first Bragg angle ?1 (radians), a first full width at half maximum w1 (radians) of the 2?1 peak, and an X-ray wavelength ? (nm). The 2?1 is not less than 0.0750 radians and not more than 0.1100 radians.
    Type: Application
    Filed: March 5, 2018
    Publication date: May 16, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hyangmi JUNG, Yuko NOMURA, Satomi TAGUCHI
  • Patent number: 10283279
    Abstract: A photoelectric conversion device of an embodiment includes, in sequence: a substrate; a first electrode; a photoelectric conversion layer containing a perovskite compound and a solvent; and a second electrode. The perovskite compound has a composition represented by a composition formula of ABX3. The A represents at least one selected from a monovalent cation of a metal element and a monovalent cation of an amine compound. The B represents a bivalent cation of a metal element. The X represents a monovalent anion of a halogen element. The number of molecules of the solvent with respect to one crystal lattice of the perovskite compound ranges from 0.004 to 0.5.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: May 7, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi Jung, Takeshi Gotanda
  • Patent number: 10090468
    Abstract: According to one embodiment, a photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer and a first layer. The photoelectric conversion layer is provided between the first electrode and the second electrode. The first layer is provided between the first electrode and the photoelectric conversion layer. The first layer includes at least a first metal oxide. The first layer has a plurality of orientation planes. At least one of the orientation planes satisfies the relationship L1>L2, where L1 is a length of the one of the plurality of orientation planes, and L2 is a thickness of the first layer along a first direction. The first direction is from the first electrode toward the second electrode.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: October 2, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takeshi Gotanda, Hyangmi Jung, Atsuko Iida, Mitsunaga Saito, Yoshihiko Nakano
  • Publication number: 20180090711
    Abstract: A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.
    Type: Application
    Filed: February 17, 2017
    Publication date: March 29, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takeshi GOTANDA, Hyangmi JUNG
  • Publication number: 20180075979
    Abstract: A photoelectric conversion device of an embodiment includes, in sequence: a substrate; a first electrode; a photoelectric conversion layer containing a perovskite compound and a solvent; and a second electrode. The perovskite compound has a composition represented by a composition formula of ABX3. The A represents at least one selected from a monovalent cation of a metal element and a monovalent cation of an amine compound. The B represents a bivalent cation of a metal element. The X represents a monovalent anion of a halogen element. The number of molecules of the solvent with respect to one crystal lattice of the perovskite compound ranges from 0.004 to 0.5.
    Type: Application
    Filed: February 22, 2017
    Publication date: March 15, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi JUNG, Takeshi GOTANDA
  • Publication number: 20170062748
    Abstract: A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 2, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hyangmi JUNG, Atsuko llDA, Takeshi GOTANDA, Hideyuki NAKAO, Shigehiko MORI, Kenji TODORI
  • Publication number: 20160285022
    Abstract: According to one embodiment, a photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer and a first layer. The photoelectric conversion layer is provided between the first electrode and the second electrode. The first layer is provided between the first electrode and the photoelectric conversion layer. The first layer includes at least a first metal oxide. The first layer has a plurality of orientation planes. At least one of the orientation planes satisfies the relationship L1>L2, where L1 is a length of the one of the plurality of orientation planes, and L2 is a thickness of the first layer along a first direction. The first direction is from the first electrode toward the second electrode.
    Type: Application
    Filed: March 15, 2016
    Publication date: September 29, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takeshi GOTANDA, Hyangmi JUNG, Atsuko IIDA, Mitsunaga SAITO, Yoshihiko NAKANO