Abstract: An organic EL device includes a thin film transistor (TFT) array substrate including a first insulating substrate, a TFT formed on the first insulating substrate and a capacitor. It also includes an organic EL substrate including a second insulating substrate, and a transparent electrode, an organic EL layer and a metal electrode, which are sequentially stacked on the second insulating substrate. The TFT is coupled to the metal electrode.

Abstract: The invention provides an improved thin film transistor (TFT) that can be formed at room temperature and has an improved contact resistance between an active layer and source and drain electrodes, and further provides a flat display device using such a TFT. The TFT includes an active layer including at least two nano particle layers which include at least one nano particle type, an insulating layer interposed between the nano particle layers, a gate electrode insulated from the active layer, and source and drain electrodes formed in respective channels, the source and drain electrodes contact one of the nano particle layers of the active layer. The structure of the TFT facilitates the simultaneous manufacturing of a plurality of different types of TFTs.

Abstract: A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on the buffer layer, a gate electrode insulated from the active layer, and a source electrode and a drain electrode that contact the active layer and are insulated from the gate electrode.

Abstract: A Thin Film Transistor (TFT) includes: a gate electrode; a source electrode and a drain electrode each insulated from the gate electrode; and an organic semiconductor layer adapted to contact each of the source and drain electrodes, the organic semiconductor layer being insulated from the gate electrode; wherein the organic semiconductor layer includes a boundary region having a smaller grain size than other portions of the organic semiconductor layer, the boundary region being arranged around at least a channel region and a source and drain region of the organic semiconductor layer.

Abstract: A thin film transistor (TFT) including a semiconductor film that may be simply patterned, a method of manufacturing the TFT, a flat panel display (FPD) including the TFT, and a method of manufacturing the FPD. The TFT includes a gate electrode, source and drain electrodes electrically insulated from the gate electrode, and a semiconductor film electrically insulated from the gate electrode and including source and drain regions coupled to the source and drain electrodes, respectively, and a channel region coupling the source and drain regions. The semiconductor film has a groove that isolates the channel region from an adjacent TFT.

Abstract: An organic thin film transistor (TFT) includes: an organic semiconductor film; source and drain electrodes electrically connected to the organic semiconductor film; a gate electrode electrically insulated from the source and drain electrodes and the organic semiconductor film; and an organic acceptor film interposed between the source and drain electrodes and the organic semiconductor film.

Abstract: A flexible flat panel display where nanoparticles are used for an active layer and the substrate is a flexible plastic, a method of manufacturing the same, a method of manufacturing a thin film transistor (TFT) using the donor sheet, and a method of manufacturing a flat panel display device using the donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The donor sheet can be manufactured at room temperature. The donor sheet has a base film, and a transfer layer being disposed at one side of the base film and transferable, wherein the transfer layer has a plurality of nanoparticles which are arranged to be approximately parallel to one another.

Abstract: A flexible flat panel display where nanoparticles are used for the active layer of the TFTs and the substrate is flexible and can be manufactured at room temperature, a flat panel display device having the same, a method of manufacturing a TFT, a method of manufacturing a flat panel display device, and a method of manufacturing a donor sheet. In making the TFTs in the display, a donor sheet is used to transfer the nanoparticles from the sheet to the substrate. The thin film transistor is placed on a substrate and includes a channel region which has at least one P-type or N-type nanoparticle arranged in a lengthwise direction, wherein the lengthwise direction of the P-type or N-type nanoparticles is parallel to a P-type or an N-type nanoparticle line partitioned off on the substrate.

Abstract: An organic electroluminescent display in which a black matrix with a concentration gradient of a transparent material and a metallic material is formed on the same surface as a pixel electrode. The black matrix and a pixel electrode of the organic electroluminescent display are formed using only one masking operation. The black matrix has a concentration gradient of a continuous gradient structure in which constituents of the transparent material are continuously decreased while constituents of the metallic material are continuously increased as a thickness of the black matrix is increased, a step gradient structure in which the constituents of the transparent material are gradually decreased while the constituents of the metallic material are gradually increased as the thickness of the black matrix is increased, or a multi-gradient structure in which the continuous gradient structure and/or the step gradient structure are repeated.

Abstract: An organic EL device includes a thin film transistor (TFT) array substrate including a first insulating substrate, a TFT formed on the first insulating substrate and a capacitor; and an organic EL substrate including a second insulating substrate, and a transparent electrode, an organic EL layer and a metal electrode, which are sequentially stacked on the second insulating substrate; wherein the TFT is electrically connected to the metal electrode.

Abstract: An organic EL device includes a thin film transistor (TFT) array substrate including a first insulating substrate, a TFT formed on the first insulating substrate and a capacitor; and an organic EL substrate including a second insulating substrate, and a transparent electrode, an organic EL layer and a metal electrode, which are sequentially stacked on the second insulating substrate; wherein the TFT is electrically connected to the metal electrode.

Abstract: An organic electroluminescent display in which a black matrix with a concentration gradient of a transparent material and a metallic material is formed on the same surface as a pixel electrode. The black matrix and a pixel electrode of the organic electroluminescent display are formed using only one masking operation. The black matrix has a concentration gradient of a continuous gradient structure in which constituents of the transparent material are continuously decreased while constituents of the metallic material are continuously increased as a thickness of the black matrix is increased, a step gradient structure in which the constituents of the transparent material are gradually decreased while the constituents of the metallic material are gradually increased as the thickness of the black matrix is increased, or a multi-gradient structure in which the continuous gradient structure and/or the step gradient structure are repeated.

Abstract: An organic EL device includes a thin film transistor (TFT) array substrate including a first insulating substrate, a TFT formed on the first insulating substrate and a capacitor. It also includes an organic EL substrate including a second insulating substrate, and a transparent electrode, an organic EL layer and a metal electrode, which are sequentially stacked on the second insulating substrate. The TFT is coupled to the metal electrode.

Abstract: A flat panel display lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same voltages are applied to the switching TFT and the driving TFT without changing a size of an active layer. The flat panel display has a light emitting device, a switching thin film transistor including a semiconductor active layer having at least a channel area for transferring a data signal to the light emitting device, and a driving thin film transistor including a semiconductor active layer having at least a channel area for driving the light emitting device so that a predetermined current flows through the light emitting device according to the data signal, the channel areas of the switching TFT and the driving TFT having different directions of current flow.

Abstract: Provided is a flat panel display in which no stripes appear on a screen, thereby improving image quality. The flat panel display has a matrix-type array of sub-pixels, each of which includes a driving thin film transistor, a first electrode driven by the driving thin film transistor, and a second electrode driving a light emission unit together with the first electrode. The driving thin film transistor includes semiconductor channels which are derived from a semiconductor layer. Heterogeneous straight lines are separated from each other on the semiconductor layer. An imaginary line connecting the semiconductor channels of one column is not parallel to the heterogeneous straight lines.

Abstract: An organic electroluminescent display in which a black matrix with a concentration gradient of a transparent material and a metallic material is formed on the same surface as a pixel electrode. The black matrix and a pixel electrode of the organic electroluminescent display are formed using only one masking operation. The black matrix has a concentration gradient of a continuous gradient structure in which constituents of the transparent material are continuously decreased while constituents of the metallic material are continuously increased as a thickness of the black matrix is increased, a step gradient structure in which the constituents of the transparent material are gradually decreased while the constituents of the metallic material are gradually increased as the thickness of the black matrix is increased, or a multi-gradient structure in which the continuous gradient structure and/or the step gradient structure are repeated.

Abstract: A method for fabricating a thin film transistor. An active layer is first formed on a substrate, then a first insulating layer is formed on the active layer. Next, a gate electrode pattern is formed on the first insulating layer and an LDD region is formed by lightly doping ions in the active layer using the gate electrode pattern as a mask. A polymer layer is formed on a surface of the gate electrode pattern using an electrochemical polymerizing process, and source and drain contact layers are formed by densely doping ions in the active layer using the gate electrode pattern deposited with the polymer layer. A second insulating layer is then formed on a surface of the first insulating layer while covering the gate electrode pattern. Contact holes are formed through the insulating layers, and metal material is sputtered in the contact holes to form the source and drain electrodes.

Abstract: An organic EL device includes a thin film transistor (TFT) array substrate including a first insulating substrate, a TFT formed on the first insulating substrate and a capacitor; and an organic EL substrate including a second insulating substrate, and a transparent electrode, an organic EL layer and a metal electrode, which are sequentially stacked on the second insulating substrate; wherein the TFT is electrically connected to the metal electrode.

Abstract: There is provided a method for manufacturing a thin film transistor. The present invention can reduce the number of process steps for manufacturing a thin film transistor, and also can lower contact resistance between layers. The manufacturing method deposits a buffer layer and an active layer on a substrate. The active layer is crystalized and patterned. Then, an insulating layer is deposited on an upper surface of the active layer and patterned to form a gate electrode on an upper surface of the insulating layer by a photolithography process using a photoresist layer. The photoresist layer covering the gate electrode is reflowed by heating and covers the edges of the gate electrode. A contact layer is formed by doping in high concentration at both edges of the active layer by plasma ion-injecting using the reflowed photoresist layer as a mask. After removing the photoresist layer, an LDD region is formed at the active layer by ion-injecting in low concentration.

Abstract: There is provided a method for manufacturing a thin film transistor. The present invention can reduce the number of process steps for manufacturing a thin film transistor, and also can lower contact resistance between layers. The manufacturing method deposits a buffer layer and an active layer on a substrate. The active layer is crystalized and patterned. Then, an insulating layer is deposited on an upper surface of the active layer and patterned to form a gate electrode on an upper surface of the insulating layer by a photolithography process using a photoresist layer. The photoresist layer covering the gate electrode is reflowed by heating and covers the edges of the gate electrode. A contact layer is formed by doping in high concentration at both edges of the active layer by plasma ion-injecting using the reflowed photoresist layer as a mask. After removing the photoresist layer, an LDD region is formed at the active layer by ion-injecting in low concentration.