Patents by Inventor Hye In Ko
Hye In Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250090935Abstract: Disclosed is an electronic device including: a display unit; a memory for storing map information of golf courses; a position acquisition sensor for acquiring a current position of the electronic device; an inertial sensor for detecting motion data of a swing of a user of the electronic device; and a control unit for determining a shot mode based on the current position and the map information, determining whether the swing is an effective swing based on the shot mode and the motion data, and, displaying a stroke count information display screen on the display unit when the swing is the effective swing.Type: ApplicationFiled: November 16, 2022Publication date: March 20, 2025Inventors: Byung Hee JUNG, Hye Rim KIM, Junyoung Ko
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Publication number: 20250055019Abstract: The present disclosure relates to a lithium secondary battery with improved safety during thermal runaway. The lithium secondary battery includes a positive electrode including a positive electrode active material, a negative electrode including a negative electrode active material, and an electrolyte, and has a nominal voltage of 3.68 V or greater, and VT represented by Equation (1) below measured after manufacturing a test module by stacking four of the lithium secondary battery fully charged by being charged to 4.35 V is 4 Ah/sec or less: Equation (1): VT=Ctotal/t.Type: ApplicationFiled: October 31, 2024Publication date: February 13, 2025Applicant: LG Energy Solution, Ltd.Inventors: Min Wook Lee, Ju Young YUN, Seok Jin OH, Joo Hwan SUNG, Hee Chang Youn, Ji Min PARK, Hye In KO, Ran Eun LEE, Jin Young PARK
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Patent number: 12224394Abstract: The present disclosure relates to a lithium secondary battery with improved safety during thermal runaway. The lithium secondary battery includes a positive electrode including a positive electrode active material, a negative electrode including a negative electrode active material, and an electrolyte, and has a nominal voltage of 3.68 V or greater, and VT represented by Equation (1) below measured after manufacturing a test module by stacking four of the lithium secondary battery fully charged by being charged to 4.35 V is 4 Ah/sec or less: Equation (1): VT=Ctotal/t.Type: GrantFiled: June 7, 2024Date of Patent: February 11, 2025Assignee: LG Energy Solution, Ltd.Inventors: Min Wook Lee, Ju Young Yun, Seok Jin Oh, Joo Hwan Sung, Hee Chang Youn, Ji Min Park, Hye In Ko, Ran Eun Lee, Jin Young Park
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Publication number: 20240413380Abstract: The present disclosure relates to a lithium secondary battery with improved safety during thermal runaway. The lithium secondary battery includes a positive electrode including a positive electrode active material, a negative electrode including a negative electrode active material, and an electrolyte, and has a nominal voltage of 3.68 V or greater, and VT represented by Equation (1) below measured after manufacturing a test module by stacking four of the lithium secondary battery fully charged by being charged to 4.35 V is 4 Ah/sec or less: Equation (1): VT=Ctotal/t.Type: ApplicationFiled: June 7, 2024Publication date: December 12, 2024Applicant: LG Energy Solution, Ltd.Inventors: Min Wook Lee, Ju Young Yun, Seok Jin Oh, Joo Hwan Sung, Hee Chang Youn, Ji Min Park, Jin Young Park, Hye In Ko, Ran Eun Lee
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Publication number: 20240341132Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.Type: ApplicationFiled: June 17, 2024Publication date: October 10, 2024Inventors: Yeon Hong KIM, Eun Hye KO, Eun Hyun KIM, Kyoung Won LEE, Sun Hee LEE, Jun Hyung LIM
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Patent number: 12075665Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.Type: GrantFiled: June 10, 2021Date of Patent: August 27, 2024Assignee: Samsung Display Co., Ltd.Inventors: Kyoung Won Lee, Eun Hye Ko, Yeon Hong Kim, Eun Hyun Kim, Sun Hee Lee, Jun Hyung Lim
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Patent number: 12016211Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.Type: GrantFiled: January 30, 2023Date of Patent: June 18, 2024Assignee: Samsung Display Co., Ltd.Inventors: Yeon Hong Kim, Eun Hye Ko, Eun Hyun Kim, Kyoung Won Lee, Sun Hee Lee, Jun Hyung Lim
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Publication number: 20240121998Abstract: A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).Type: ApplicationFiled: August 8, 2023Publication date: April 11, 2024Inventors: Sun Hee LEE, Eun Hye KO, Sang Woo SOHN, Jung Hoon LEE, Hyun Mo LEE, Hyun Jun JEONG
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Publication number: 20240040920Abstract: A display device includes a light blocking layer positioned on a substrate and including a first portion and a second portion having a thickness greater than a thickness of the first portion; a buffer layer positioned above the light blocking layer; a semiconductor layer positioned over the buffer layer and including a source region, a channel region, and a drain region; a gate insulating layer positioned over the semiconductor layer; a gate electrode positioned over the gate insulating layer; an interlayer insulating layer positioned over the gate electrode, and including a first opening overlapping the second portion of the light blocking layer in a plan view and a second opening overlapping the source region of the semiconductor layer in a plan view; and a dummy gate electrode positioned on a side surface of the first opening.Type: ApplicationFiled: June 28, 2023Publication date: February 1, 2024Applicant: Samsung Display Co., LTD.Inventors: Kyoung Won LEE, Eun Hye KO, Yeon Hong KIM, Eun Hyun KIM, Sun Hee LEE
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Publication number: 20230180545Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.Type: ApplicationFiled: January 30, 2023Publication date: June 8, 2023Inventors: Yeon Hong KIM, Eun Hye KO, Eun Hyun KIM, Kyoung Won LEE, Sun Hee LEE, Jun Hyung LIM
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Patent number: 11573275Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.Type: GrantFiled: December 7, 2020Date of Patent: February 7, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-hye Ko, Je-kook Kim
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Patent number: 11569328Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.Type: GrantFiled: April 6, 2021Date of Patent: January 31, 2023Assignee: Samsung Display Co., Ltd.Inventors: Yeon Hong Kim, Eun Hye Ko, Eun Hyun Kim, Kyoung Won Lee, Sun Hee Lee, Jun Hyung Lim
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Patent number: 11327079Abstract: The present invention relates to a method of directly detecting, using a mass-spectrometry method, whether a microorganism contained in a sample is resistant to antibiotics, and a kit for detection used therewith. More particularly, the present invention relates to a method and kit for directly detecting an antibiotic hydrolase secreted by a microorganism resistant to antibiotics, thereby directly determining whether the microorganism is resistant to antibiotics. According to the present invention, it is possible to very simply and immediately confirm whether a specific strain is resistant to antibiotics in the field. In particular, a complicated pretreatment process such as proteolysis is not performed, and a complicated identification process of calibrating and then combining the obtained results is not performed.Type: GrantFiled: December 12, 2018Date of Patent: May 10, 2022Assignee: DK HOLDINGS COMPANY, LTDInventors: Kye Shin Park, Joon Sang Park, Eun Hee Lee, Dong Hwi Hwang, In Jung Ji, Jae Woo Roh, Jin Sung Ahn, Eun-Jeong Yoon, Ji Hye Ko
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Publication number: 20220140032Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.Type: ApplicationFiled: June 10, 2021Publication date: May 5, 2022Inventors: Kyoung Won LEE, Eun Hye KO, Yeon Hong KIM, Eun Hyun KIM, Sun Hee LEE, Jun Hyung LIM
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Publication number: 20220020837Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.Type: ApplicationFiled: April 6, 2021Publication date: January 20, 2022Inventors: Yeon Hong KIM, Eun Hye KO, Eun Hyun KIM, Kyoung Won LEE, Sun Hee LEE, Jun Hyung LIM
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Publication number: 20210318332Abstract: The present invention relates to a method of directly detecting, using a mass-spectrometry method, whether a microorganism contained in a sample is resistant to antibiotics, and a kit for detection used therewith. More particularly, the present invention relates to a method and kit for directly detecting an antibiotic hydrolase secreted by a microorganism resistant to antibiotics, thereby directly determining whether the microorganism is resistant to antibiotics. According to the present invention, it is possible to very simply and immediately confirm whether a specific strain is resistant to antibiotics in the field. In particular, a complicated pretreatment process such as proteolysis is not performed, and a complicated identification process of calibrating and then combining the obtained results is not performed.Type: ApplicationFiled: December 12, 2018Publication date: October 14, 2021Inventors: Kye Shin PARK, Joon Sang PARK, Eun Hee LEE, Dong Hwi HWANG, In Jung JI, Jae WOO ROH, Jin Sung AHN, Eun-Jeong YOON, Ji Hye KO
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Publication number: 20210167125Abstract: A display device according to some embodiments includes: a substrate; a first transistor and a second transistor disposed on the substrate and spaced apart from each other; a first electrode connected to one of the first transistor and the second transistor; a second electrode overlapping the first electrode; and a light emitting layer between the first electrode and the second electrode, wherein the first transistor may include: a first semiconductor layer on the substrate; a first gate electrode on the first semiconductor layer; and a first source electrode and a first drain electrode connected to the first semiconductor layer, and the second transistor may include: a second semiconductor layer on the substrate; a second gate electrode on the second semiconductor layer; and a second source electrode and a second drain electrode connected to the second semiconductor layer, and the first gate electrode and the second semiconductor layer may be on the same layer.Type: ApplicationFiled: July 23, 2019Publication date: June 3, 2021Inventors: Eun Hyun KIM, Eun Hye KO, Se Ryeong KIM, Eok Su KIM, Sun Hee LEE
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Publication number: 20210088599Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.Type: ApplicationFiled: December 7, 2020Publication date: March 25, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Eun-hye KO, Je-kook KIM
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Patent number: 10945117Abstract: Provided are methods of detecting a Diameter spoofing attack. According to an embodiment, the method comprises, obtaining a normal International Mobile Subscriber Identity (IMSI) from a packet of a Diameter S6a protocol transmitted from a Mobile Management Entity (MME) to a Home Subscriber Server (HSS) of a home network, adding a record comprising the normal IMSI to a session table, obtaining an Insert Subscriber Data Request (IDR) message of the Diameter S6a protocol and determining a category of the IDR message.Type: GrantFiled: March 27, 2020Date of Patent: March 9, 2021Assignee: KOREA INTERNET & SECURITY AGENCYInventors: Seong Min Park, Young Kwon Park, Bo Min Choi, Eun Hye Ko, Tae Eun Kim, Jin Hyun Cho, Do Won Kim, Hyung Jin Cho, Hwan Kuk Kim
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Patent number: 10920210Abstract: The present invention relates to a novel recombinant batroxobin mixture, a hemostatic composition comprising the same, and a method for preparing the same. According to the present invention, the hemostatic composition of the present invention has an excellent hemostatic effect by suppressing rebleeding, and maintains activity thereof even when prepared in a solid form, and thus, the composition of the present invention can be easily used by being applied as a topical hemostatic agent.Type: GrantFiled: December 14, 2016Date of Patent: February 16, 2021Assignee: NC BIT INC.Inventors: Jong Tak Kim, Young Seomun, Jin Woo Kim, Sang Woo Kang, Yong Je Woo, Eun Hye Ko