Abstract: Disclosed is a thin film transistor substrate comprising a substrate; a first thin film transistor on the substrate, the first thin film transistor including a first active layer and a first gate electrode; a second thin film transistor on the substrate, the second thin film transistor including a second active layer and a second gate electrode above the first active layer and the first gate electrode; a first insulating layer between the first gate electrode and the second active layer; and; and a first connection electrode connecting together the first active layer and the second active layer, the first connection electrode extending through a first contact hole in the first insulating layer and is in contact with each of the first active layer and the second active layer and a display apparatus including the same.

Abstract: Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same, in which a photo-sensitivity is improved by increasing a fill factor, a stability of the PIN diode is improved, and generation of parasitic capacitance is reduced or minimized. In one embodiment, the PIN diode maximally extends so that electrodes and contact holes of the thin-film transistor is disposed inside the PIN diode. A planarization layer of organic material is present between the electrodes or wirings. Further, a light receiving region of the PIN diode is increased or maximized by positioning the bias line to overlap the data line or the gate line so as not to overlap with the PIN diode.

Abstract: An array substrate for a digital X-ray detector, and an X-ray detector including the same are disclosed, which reduce or minimize a contact resistance between a bias electrode and a PIN diode, and also improve a fill factor of the PIN diode. In the array substrate, a dual bias electrode in which a second bias electrode formed of a transparent conductive material is connected to a first bias electrode that is additionally connected to an upper electrode of the PIN diode, such that total resistance of the bias electrodes is reduced and a line width of the first bias electrode formed of a non-transparent material is reduced, resulting in an increased fill factor of the PIN diode.

Abstract: Disclosed is a pixel array panel for a digital X-ray detector, the pixel array panel including a plurality of pixel regions, wherein the pixel array panel includes: a first electrode corresponding to each pixel region; a plurality of PIN (P-type/I-type/N-type semiconductors) layers disposed on the first electrode and arranged in a matrix form; and a second electrode disposed on each PIN layer.

Abstract: Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same in which a photo-sensitivity is improved by increasing a fill factor, and interference between PIN diodes is minimized, and step coverage of the PIN diode is improved to improve stability of the PIN diode. To those ends, an area of the PIN diode is maximized, and a pixel electrode of the PIN diode is disposed inside the PIN layer. Further, a clad layer made of inorganic material is formed in an edge region and/or a contact hole region of the pixel electrode. Thus, a leakage current resulting from concentrating an electric field on a curved region may be minimized.

Abstract: A substrate for a digital X-ray detector configured to sense an X-ray signal, a detector including the same, and a manufacturing method thereof. According to an embodiment of the present disclosure, the substrate for an X-ray detector includes an interlayer dielectric layer arranged on a thin film transistor, a first passivation layer and a second passivation layer arranged on the interlayer dielectric layer, and a hydrogen blocking layer arranged on at least one of the first passivation layer and the second passivation layer in a transistor region corresponding to the thin film transistor.

Abstract: Disclosed is a pixel array panel for a digital X-ray detector, the pixel array panel including a plurality of pixel regions, wherein the pixel array panel includes: a first electrode corresponding to each pixel region; a plurality of PIN (P-type/I-type/N-type semiconductors) layers disposed on the first electrode and arranged in a matrix form; and a second electrode disposed on each PIN layer.

Abstract: Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same in which a photo-sensitivity is improved by increasing a fill factor, and interference between PIN diodes is minimized, and step coverage of the PIN diode is improved to improve stability of the PIN diode. To those ends, an area of the PIN diode is maximized, and a pixel electrode of the PIN diode is disposed inside the PIN layer. Further, a clad layer made of inorganic material is formed in an edge region and/or a contact hole region of the pixel electrode. Thus, a leakage current resulting from concentrating an electric field on a curved region may be minimized.

Abstract: Disclosed are a thin-film transistor array substrate for a high-resolution digital X-ray detector and a high-resolution digital X-ray detector including the same, in which a photo-sensitivity is improved by increasing a fill factor, a stability of the PIN diode is improved, and generation of parasitic capacitance is reduced or minimized. In one embodiment, the PIN diode maximally extends so that electrodes and contact holes of the thin-film transistor is disposed inside the PIN diode. A planarization layer of organic material is present between the electrodes or wirings. Further, a light receiving region of the PIN diode is increased or maximized by positioning the bias line to overlap the data line or the gate line so as not to overlap with the PIN diode.

Abstract: An array substrate for a digital X-ray detector, and an X-ray detector including the same are disclosed, which reduce or minimize a contact resistance between a bias electrode and a PIN diode, and also improve a fill factor of the PIN diode. In the array substrate, a dual bias electrode in which a second bias electrode formed of a transparent conductive material is connected to a first bias electrode that is additionally connected to an upper electrode of the PIN diode, such that total resistance of the bias electrodes is reduced and a line width of the first bias electrode formed of a non-transparent material is reduced, resulting in an increased fill factor of the PIN diode.

Abstract: A substrate for a digital X-ray detector configured to sense an X-ray signal, a detector including the same, and a manufacturing method thereof. According to an embodiment of the present disclosure, the substrate for an X-ray detector includes an interlayer dielectric layer arranged on a thin film transistor, a first passivation layer and a second passivation layer arranged on the interlayer dielectric layer, and a hydrogen blocking layer arranged on at least one of the first passivation layer and the second passivation layer in a transistor region corresponding to the thin film transistor.