Abstract: A resin including a unit represented by Chemical Formula 1, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition is described: wherein all the variables are described herein.

Abstract: A resin, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition are disclosed in herein. In some embodiments, a resin includes a unit of Chemical Formula 1 and a unit of Chemical Formula 2: wherein, in Chemical Formulae 1 and 2, Ar1, Ar2, R1, r1, X1 to X4, X9, X10, Z1, Z2, Z5, La, La?, a, b, p, t, m, n, L11, l11, X11 to X16, Z11 to Z13, Lb, Lb?, a?, b?, p?, C?, m? and n? are defined herein.

Abstract: A resin, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition are disclosed herein. In some embodiments, the resin includes a unit of Chemical Formula 1 and a unit of Chemical Formula 2 wherein, in Chemical Formulae 1 and 2, Ar1, Ar2, R1 to R3, r1 to r3, L1, L2, X1 to X10, X?9, X?10, Z1 to Z6, La, La?, La?, La??, a, b, c, d, p, q, t, t?, m, n, m? and n? are defined herein.

Abstract: A resin includes a unit represented by Chemical Formula 1, a method for preparing the same, a resin composition including the same, and a molded article including the resin composition in Chemical Formula 1, Ar1, Ar2, R1, r1, X1 to X4, Z1, Z2, a and b are described herein.

Abstract: A nonvolatile memory device includes multiple memory cells including first memory cells and second memory cells. A method of programming the nonvolatile memory device includes: performing first programming to apply a programming forcing voltage to a bit line of each of the first memory cells; and dividing the second memory cells into a first cell group, a second cell group, and a third cell group, based on a threshold voltage of the second memory cells after performing the first programming. The method also includes performing second programming to apply a programming inhibition voltage to the bit line of each of the first memory cells and a bit line of each of memory cells of the first cell group. A level of the programming forcing voltage is lower than that of the programming inhibition voltage.

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

Abstract: A nonvolatile memory device includes multiple memory cells including first memory cells and second memory cells. A method of programming the nonvolatile memory device includes: performing first programming to apply a programming forcing voltage to a bit line of each of the first memory cells; and dividing the second memory cells into a first cell group, a second cell group, and a third cell group, based on a threshold voltage of the second memory cells after performing the first programming. The method also includes performing second programming to apply a programming inhibition voltage to the bit line of each of the first memory cells and a bit line of each of memory cells of the first cell group. A level of the programming forcing voltage is lower than that of the programming inhibition voltage.

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

Abstract: A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.

Abstract: A memory device includes a memory cell array including a plurality of memory cells; a counting circuit configured to obtain a counting result by performing a counting operation on data read from the plurality of memory cells; and a control logic configured to perform a data restoring operation based on the counting result without involvement of a memory controller.

Abstract: A method for programming a non-volatile memory device includes programming a lower bit in a memory cell included in the non-volatile memory device, reading the lower bit programmed in the memory cell before programming an upper bit in the memory cell, determining a threshold voltage of the memory cell according to a result of reading the lower bit, determining a type of the memory cell using the threshold voltage, and supplying one of a plurality of pulses to a bit line connected to the memory cell according to the determined type of the memory cell.

Abstract: A method for programming a non-volatile memory device includes programming a lower bit in a memory cell included in the non-volatile memory device, reading the lower bit programmed in the memory cell before programming an upper bit in the memory cell, determining a threshold voltage of the memory cell according to a result of reading the lower bit, determining a type of the memory cell using the threshold voltage, and supplying one of a plurality of pulses to a bit line connected to the memory cell according to the determined type of the memory cell.