Abstract: The present invention relates to a nanovesicle comprising a heterodimeric G-protein coupled receptor, a method for preparing the nanovesicle, a field effect transistor-based taste sensor comprising the nanovesicle, and a method for manufacturing the taste sensor. The field effect transistor based taste sensor functionalized by the nanovesicle comprising the heterodimer G-protein coupled receptor according to the present invention has excellent sensitivity and selectivity and may highly specifically detect a sweet taste substance in real time, by using the heterodimeric G-protein coupled receptor and the nanovesicle comprising the same.

Abstract: An etch stop layer is formed on a lower wiring. An interlayer insulating film covers the lower wiring and the etch stop layer. A via exposes an upper surface of the etch stop layer, in the interlayer insulating film. A first filler is formed in the via. The first filler is etched to a first filler pattern. A second filler is formed on the first filler pattern and is etched to a second filler pattern. A trench is formed by etching the interlayer insulating film. The first and second filler patterns are etched during the forming of the trench to form a residual filler pattern. The residual filler pattern and the etch stop layer are removed and a wiring structure is formed electrically connected to the lower wiring. The via includes lower and upper portions and the trench includes the upper portion of the via.

Abstract: The present invention relates to a nanovesicle comprising a heterodimeric G-protein coupled receptor, a method for preparing the nanovesicle, a field effect transistor-based taste sensor comprising the nanovesicle, and a method for manufacturing the taste sensor. The field effect transistor based taste sensor functionalized by the nanovesicle comprising the heterodimer G-protein coupled receptor according to the present invention has excellent sensitivity and selectivity and may highly specifically detect a sweet taste substance in real time, by using the heterodimeric G-protein coupled receptor and the nanovesicle comprising the same.

Abstract: An etch stop layer is formed on a lower wiring. An interlayer insulating film covers the lower wiring and the etch stop layer. A via exposes an upper surface of the etch stop layer, in the interlayer insulating film. A first filler is formed in the via. The first filler is etched to a first filler pattern. A second filler is formed on the first filler pattern and is etched to a second filler pattern. A trench is formed by etching the interlayer insulating film. The first and second filler patterns are etched during the forming of the trench to form a residual filler pattern. The residual filler pattern and the etch stop layer are removed and a wiring structure is formed electrically connected to the lower wiring. The via includes lower and upper portions and the trench includes the upper portion of the via.

Abstract: The present invention relates to a nanovesicle comprising a heterodimeric G-protein coupled receptor, a method for preparing the nanovesicle, a field effect transistor-based taste sensor comprising the nanovesicle, and a method for manufacturing the taste sensor. The field effect transistor based taste sensor functionalized by the nanovesicle comprising the heterodimer G-protein coupled receptor according to the present invention has excellent sensitivity and selectivity and may highly specifically detect a sweet taste substance in real time, by using the heterodimeric G-protein coupled receptor and the nanovesicle comprising the same.