Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and cis amole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A method of and apparatus for cleaning a semiconductor chip, the method including applying a first polar composition to a protection layer on a surface of at least one semiconductor chip to remove a particle from the surface of the at least one semiconductor chip and suspend the particle in the first polar composition; and applying a second polar composition, having a surface tension that is lower than that of the first polar composition, to a central portion of the applied first polar composition to push the first polar composition and the particle toward an outskirt of the at least one semiconductor chip.

Abstract: A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater. An optical density of a stack composed of the first layer and the second layer is 3 or greater.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater. An optical density of a stack composed of the first layer and the second layer is 3 or greater.

Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

Abstract: A semiconductor device and related method of manufacture are disclosed. The device comprises; a trench having a corner portion formed in the semiconductor substrate, a first oxide film formed on an inner wall of the trench and having an upper end portion exposing the corner portion of the semiconductor substrate, a nitride liner formed on the first oxide film, a second oxide film formed in contact with the upper end of the first oxide film and on the exposed corner portion and an upper surface of the semiconductor substrate, a field insulating film formed on the nitride liner to substantially fill the trench, and a field protecting film formed in contact with the second oxide film and filling a trench edge recess formed between the field insulating film and the second oxide film.

Abstract: An optical sheet and a display optical filter which can increase a contrast ratio in a bright room are provided. The optical sheet for the display optical filter includes a transparent substrate including a plurality of pattern grooves formed thereon; and a light shielding pattern formed of a light absorbent material filled in the plurality of pattern grooves. The light shielding pattern may be formed of a material for either absorbing or shielding light filled in the plurality of pattern grooves. In particular, when an external illuminance increases from 0 Lux to 250 Lux, a reduction rate of a color gamut in CIE color coordinates may be 9% or less with respect to NTSC, and the reduction rate of the color gamut is relatively less in comparison with the case where the optical sheet of the present invention is not used.

Abstract: Disclosed is a complex film for a display apparatus, which comprises a base film; an anti-reflection film formed on a first surface of the base film and adapted to prevent reflection of external light; an external light shielding film formed on a second surface opposite to the first surface and including an external light shielding pattern, the external light shielding pattern having a plurality of external light shielding parts formed on a surface of the external light shielding film; and an adhesive film formed on the external light shielding film and including at least one colorant having a selective wavelength absorption capability. The complex film has multi-functionalities such as electromagnetic wave shielding, external light absorption, near infrared ray shielding, color correction, and the like, thereby simplifying an assembly process of the display apparatus, and reducing the thickness of the display apparatus.

Abstract: A semiconductor device and related method of manufacture are disclosed. The device comprises; a trench having a corner portion formed in the semiconductor substrate, a first oxide film formed on an inner wall of the trench and having an upper end portion exposing the corner portion of the semiconductor substrate, a nitride liner formed on the first oxide film, a second oxide film formed in contact with the upper end of the first oxide film and on the exposed corner portion and an upper surface of the semiconductor substrate, a field insulating film formed on the nitride liner to substantially fill the trench, and a field protecting film formed in contact with the second oxide film and filling a trench edge recess formed between the field insulating film and the second oxide film.

Abstract: An integrated PCM-CODEC circuit including a plurality of PCM subscriber lines consisting of a SLIC for interfacing a telephone line with a switching system, an impedance conformer and a PCM-CODEC, a common bus for transferring a telephone signal into or from a subscriber according to the time division rule for the timing of telephone line use, a telemetering signal source and a (synchronization signal for controlling portion of the telephone call called by the n'th subscriber. The PCM-CODEC circuit includes a buffer, a signal selector, an applied gain controller, an anti-aliasing filter, a telemetering signal filter, a BPF, a coder, a decoder, a LPF, a received-gain controller, a smoothing filter, an operational amplifier and a telemetering gate.