Patents by Inventor Hye-mi Kim
Hye-mi Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11407848Abstract: A method is provided for preparing a super absorbent polymer capable of exhibiting an excellent absorption rate by including a uniform porous structure through a simple and economical process. The method includes: performing a crosslinking polymerization of a water-soluble ethylenically unsaturated monomer to form a hydrogel polymer; drying and pulverizing the hydrogel polymer; classifying the pulverized polymer into polymer particles having a particle size of at least 10 to 150 ?m, polymer particles having a particle size of 150 to 200 ?m, and polymer particles having a particle size of 200 to 850 ?m to form a base polymer powder having a particle size of 150 to 850 ?m; and surface-crosslinking the base polymer powder, wherein in the crosslinking polymerization step, the foaming polymerization proceeds in the presence of polymer particles having an average particle size of 10 to 200 ?m obtained in the classifying step and an anionic surfactant.Type: GrantFiled: October 15, 2018Date of Patent: August 9, 2022Inventors: Moo Kon Kim, Sang Gi Lee, Hye Mi Nam, Chang Hun Lee, Tae Yun Kim
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Publication number: 20220235140Abstract: The present invention relates to an antibody or an antigen-binding fragment thereof that has improved binding affinity for endothelin receptor type A. The present invention also relates to an antibody or an antigen-binding fragment thereof that has improved productivity. The antibody developed in the present invention is suitable for use in the treatment and diagnosis of diseases associated with endothelin receptor type A due to its remarkably improved binding affinity for the antigen and high productivity compared to conventional antibodies.Type: ApplicationFiled: May 27, 2020Publication date: July 28, 2022Applicant: HEDGEHOG, INC.Inventors: Sang Taek JUNG, Youn Jae KIM, Hye-Mi AHN, Byoung Joon KO, Won Kyu LEE, Jung-Hyun NA, Man-Seok JU
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Patent number: 11384208Abstract: A super absorbent polymer according to the present invention has an excellent discoloration resistance property even under high temperature/high humidity conditions, while maintaining excellent absorption performance, and is preferably used for hygienic materials such as diapers, and thus can exhibit excellent performance.Type: GrantFiled: May 10, 2017Date of Patent: July 12, 2022Inventors: Sang Gi Lee, Hye Mi Nam, Soo Jin Lee, Chang Sun Han, Moo Kon Kim
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Publication number: 20220025079Abstract: A method for separating polybutene, the method including: (1) introducing a polybutene solution into a distillation column, the solution including polybutene, a halogenated hydrocarbon solvent, and a non-polar hydrocarbon solvent and having a viscosity of 1 cp to 50 cp measured at 25° C. using a rotational viscometer; (2) collecting an upper stream including the halogenated hydrocarbon solvent and a portion of the non-polar hydrocarbon solvent from an upper portion of the distillation column, and collecting a lower stream including the polybutene and a remaining portion of the non-polar hydrocarbon solvent from a lower portion of the distillation column, where the lower stream has a viscosity of 10 cp to 150 cp; and (3) separating the remaining portion of the non-polar hydrocarbon solvent and the polybutene from the lower stream.Type: ApplicationFiled: January 17, 2020Publication date: January 27, 2022Inventors: Woo Sung HWANG, Jeong Seok LEE, Won Hee KIM, Hye Mi KIM, Gyeong Shin CHOI, Dong Hyun JO
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Patent number: 11201144Abstract: A main Insulated Gate Bipolar Transistor (IGBT) and a sense IGBT may have a sense resistor connected between a sense emitter of the sense IGBT and a main emitter of the main IGBT. Back-to-back Zener diodes may be connected between a sense gate of the sense IGBT and the sense emitter, and configured to clamp a voltage between the sense gate and the sense emitter during an electrostatic discharge (ESD) event.Type: GrantFiled: November 6, 2019Date of Patent: December 14, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Hye-Mi Kim, Kyu-hyun Lee, Youngchul Kim, Seunghyun Hong
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Patent number: 11183495Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate.Type: GrantFiled: July 25, 2019Date of Patent: November 23, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Sun-hak Lee, Yong Zhong Hu, Hye-mi Kim
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Publication number: 20210275596Abstract: The present invention relates to a therapeutic stem cell composition comprising a stem cell in which the expression level of any one or more genes selected from the group consisting of ACAN, SOX9, AP2, RUNX2, OCN, ALP, OCT4, SOX2, CXCR4, cMET, PDGFRA, PDGFRB, VEGF-R1, VEGF-R2, CSF-1, IDO2, Sox2, Nanog, cMyc, Klf2, Klf4, Rex1, Esrrb, Neurog1, Neurod1, Nkx2.2, Ascl2, Gfap, S100b, Olig2, Neurog2, T, Nkx2.5, Esrrbb, Klf2, Klf4, cTnT, a-Actin, Mlc2v and Runx1 is higher or lower than the expression level of GAPDH (glyceraldehyde 3-phosphate dehydrogenase) gene.Type: ApplicationFiled: July 20, 2018Publication date: September 9, 2021Inventors: Heun Soo KANG, Hye Mi KIM, Ji Eun SONG, Yingfu YIN, Ji Woong SHIN, Hye Won KANG, Yong Hwan KIM
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Patent number: 11106942Abstract: Disclosed are a learning data generation method and apparatus needed to learn animation characters on the basis of deep learning. The learning data generation method needed to learn animation characters on the basis of deep learning may include collecting various images from an external source using wired/wireless communication, acquiring character images from the collected images using a character detection module, clustering the acquired character images, selecting learning data from among the clustered images, and inputting the selected learning data to an artificial neural network for character recognition.Type: GrantFiled: November 26, 2019Date of Patent: August 31, 2021Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Dong Hyuck Im, Jung Hyun Kim, Hye Mi Kim, Jee Hyun Park, Yong Seok Seo, Won Young Yoo
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Publication number: 20210120355Abstract: A method for receiving a mono sound source audio signal including phase information as an input, and separating into a plurality of signals may comprise performing initial convolution and down-sampling on the inputted mono sound source audio signal; generating an encoded signal by encoding the inputted signal using at least one first dense block and at least one down-transition layer; generating a decoded signal by decoding the encoded signal using at least one second dense block and at least one up-transition layer; and performing final convolution and resize on the decoded signal.Type: ApplicationFiled: September 25, 2020Publication date: April 22, 2021Applicant: Electronics and Telecommunications Research InstituteInventors: Hye Mi KIM, Jung Hyun KIM, Jee Hyun PARK, Yong Seok SEO, Dong Hyuck IM, Won Young YOO
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Publication number: 20210111171Abstract: A main Insulated Gate Bipolar Transistor (IGBT) and a sense IGBT may have a sense resistor connected between a sense emitter of the sense IGBT and a main emitter of the main IGBT. Back-to-back Zener diodes may be connected between a sense gate of the sense IGBT and the sense emitter, and configured to clamp a voltage between the sense gate and the sense emitter during an electrostatic discharge (ESD) event.Type: ApplicationFiled: November 6, 2019Publication date: April 15, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Hye-Mi KIM, Kyu-hyun LEE, Youngchul KIM, Seunghyun HONG
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Publication number: 20210103721Abstract: Disclosed are a learning data generation method and apparatus needed to learn animation characters on the basis of deep learning. The learning data generation method needed to learn animation characters on the basis of deep learning may include collecting various images from an external source using wired/wireless communication, acquiring character images from the collected images using a character detection module, clustering the acquired character images, selecting learning data from among the clustered images, and inputting the selected learning data to an artificial neural network for character recognition.Type: ApplicationFiled: November 26, 2019Publication date: April 8, 2021Inventors: Dong Hyuck IM, Jung Hyun KIM, Hye Mi KIM, Jee Hyun PARK, Yong Seok SEO, Won Young YOO
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Publication number: 20210003582Abstract: The present invention relates to a method of improving the quality of therapeutic cells by real-time glutathione monitoring.Type: ApplicationFiled: November 28, 2018Publication date: January 7, 2021Inventors: Heun Soo Kang, Hye Mi Kim, Ji Eun Song, Gwang Mo Yang, Ji Woong Shin, Hye Won Kang, Yong Hwan Kim, Myung Jin Kim
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Publication number: 20200363422Abstract: The present invention provides a method of measuring the quality of therapeutic cells through real-time glutathione monitoring.Type: ApplicationFiled: November 28, 2018Publication date: November 19, 2020Inventors: Heun Soo Kang, Hye Mi Kim, Ji Eun Song, Gwang Mo Yang, Ji Woong Shin, Hye Won Kang, Yong Hwan Kim, Myung Jin Kim
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Publication number: 20200354388Abstract: The present invention relates to a real-time fluorescence imaging sensor for measuring glutathione in cell organelles and a method for fabricating the same. More specifically, the present invention relates to a novel compound for measuring glutathione in cell organelles, a method for preparing the novel compound, a real-time fluorescence imaging sensor for measuring glutathione in cell organelles, which comprises the novel compound, a method for fabricating the imaging sensor, and a method of measuring glutathione in cell organelles by use of the imaging sensor. When the composition comprising the compound according to the present invention is used, it can measure the antioxidant activity of the organelle mitochondria or Golgi apparatus in living cells, particularly stem cells, and can screen highly active stem cells based on the results obtained by measuring the antioxidant activity of the cell organelle.Type: ApplicationFiled: August 23, 2018Publication date: November 12, 2020Inventors: Heun Soo Kang, Hye Mi Kim, Ji Eun Song, Myoung Jin Kim, Ki Hang Choi
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Publication number: 20190348412Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate.Type: ApplicationFiled: July 25, 2019Publication date: November 14, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Sun-hak LEE, Yong Zhong HU, Hye-mi KIM
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Publication number: 20190318548Abstract: The present invention relates to a method and an apparatus for matching a virtual object in a virtual environment, the method including generating a point cloud of a non-rigid object, matching a low resolution virtual model to the point cloud, and implementing a high resolution model using the matched model.Type: ApplicationFiled: April 15, 2019Publication date: October 17, 2019Applicant: Electronics and Telecommunications Research InstituteInventors: Yong Sun KIM, Hye Mi KIM, Ki Tae KIM, Ki Hong KIM
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Patent number: 10366981Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate. The diode part includes a p-type body region disposed inside the substrate and electrically connected with the anode terminal, an n-type well disposed on one side of the p-type body region and having a first impurity concentration, and a first n-type semiconductor region disposed below the p-type body region and having a second impurity concentration which is lower than the first impurity concentration.Type: GrantFiled: September 4, 2015Date of Patent: July 30, 2019Assignee: Semiconductor Components Industries, LLCInventors: Sun-hak Lee, Yong Zhong Hu, Hye-mi Kim
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Patent number: 10312322Abstract: A power semiconductor device includes a substrate including a first epitaxial layer, a second epitaxial layer, and a base substrate where the first epitaxial layer is disposed between the second epitaxial layer and the base substrate. The power semiconductor device includes an anode electrode and a cathode electrode disposed on the substrate, a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity. The power semiconductor device includes an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration. The power semiconductor device includes an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.Type: GrantFiled: April 13, 2018Date of Patent: June 4, 2019Assignee: Semiconductor Components Industries, LLCInventors: Hye-mi Kim, Sun-hak Lee
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Publication number: 20180233555Abstract: A power semiconductor device includes a substrate including a first epitaxial layer, a second epitaxial layer, and a base substrate where the first epitaxial layer is disposed between the second epitaxial layer and the base substrate. The power semiconductor device includes an anode electrode and a cathode electrode disposed on the substrate, a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity. The power semiconductor device includes an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration. The power semiconductor device includes an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.Type: ApplicationFiled: April 13, 2018Publication date: August 16, 2018Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Hye-mi Kim, Sun-hak Lee
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Patent number: 9947742Abstract: A power semiconductor device includes: a substrate; an anode electrode and a cathode electrode disposed on the substrate; a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity; an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration; and an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.Type: GrantFiled: October 28, 2016Date of Patent: April 17, 2018Assignee: Fairchild Korea Semiconductor Ltd.Inventors: Hye-mi Kim, Sun-hak Lee