Abstract: A method is provided for preparing a super absorbent polymer capable of exhibiting an excellent absorption rate by including a uniform porous structure through a simple and economical process. The method includes: performing a crosslinking polymerization of a water-soluble ethylenically unsaturated monomer to form a hydrogel polymer; drying and pulverizing the hydrogel polymer; classifying the pulverized polymer into polymer particles having a particle size of at least 10 to 150 ?m, polymer particles having a particle size of 150 to 200 ?m, and polymer particles having a particle size of 200 to 850 ?m to form a base polymer powder having a particle size of 150 to 850 ?m; and surface-crosslinking the base polymer powder, wherein in the crosslinking polymerization step, the foaming polymerization proceeds in the presence of polymer particles having an average particle size of 10 to 200 ?m obtained in the classifying step and an anionic surfactant.

Abstract: The present invention relates to an antibody or an antigen-binding fragment thereof that has improved binding affinity for endothelin receptor type A. The present invention also relates to an antibody or an antigen-binding fragment thereof that has improved productivity. The antibody developed in the present invention is suitable for use in the treatment and diagnosis of diseases associated with endothelin receptor type A due to its remarkably improved binding affinity for the antigen and high productivity compared to conventional antibodies.

Abstract: A super absorbent polymer according to the present invention has an excellent discoloration resistance property even under high temperature/high humidity conditions, while maintaining excellent absorption performance, and is preferably used for hygienic materials such as diapers, and thus can exhibit excellent performance.

Abstract: A method for separating polybutene, the method including: (1) introducing a polybutene solution into a distillation column, the solution including polybutene, a halogenated hydrocarbon solvent, and a non-polar hydrocarbon solvent and having a viscosity of 1 cp to 50 cp measured at 25° C. using a rotational viscometer; (2) collecting an upper stream including the halogenated hydrocarbon solvent and a portion of the non-polar hydrocarbon solvent from an upper portion of the distillation column, and collecting a lower stream including the polybutene and a remaining portion of the non-polar hydrocarbon solvent from a lower portion of the distillation column, where the lower stream has a viscosity of 10 cp to 150 cp; and (3) separating the remaining portion of the non-polar hydrocarbon solvent and the polybutene from the lower stream.

Abstract: A main Insulated Gate Bipolar Transistor (IGBT) and a sense IGBT may have a sense resistor connected between a sense emitter of the sense IGBT and a main emitter of the main IGBT. Back-to-back Zener diodes may be connected between a sense gate of the sense IGBT and the sense emitter, and configured to clamp a voltage between the sense gate and the sense emitter during an electrostatic discharge (ESD) event.

Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate.

Abstract: The present invention relates to a therapeutic stem cell composition comprising a stem cell in which the expression level of any one or more genes selected from the group consisting of ACAN, SOX9, AP2, RUNX2, OCN, ALP, OCT4, SOX2, CXCR4, cMET, PDGFRA, PDGFRB, VEGF-R1, VEGF-R2, CSF-1, IDO2, Sox2, Nanog, cMyc, Klf2, Klf4, Rex1, Esrrb, Neurog1, Neurod1, Nkx2.2, Ascl2, Gfap, S100b, Olig2, Neurog2, T, Nkx2.5, Esrrbb, Klf2, Klf4, cTnT, a-Actin, Mlc2v and Runx1 is higher or lower than the expression level of GAPDH (glyceraldehyde 3-phosphate dehydrogenase) gene.

Abstract: Disclosed are a learning data generation method and apparatus needed to learn animation characters on the basis of deep learning. The learning data generation method needed to learn animation characters on the basis of deep learning may include collecting various images from an external source using wired/wireless communication, acquiring character images from the collected images using a character detection module, clustering the acquired character images, selecting learning data from among the clustered images, and inputting the selected learning data to an artificial neural network for character recognition.

Abstract: A method for receiving a mono sound source audio signal including phase information as an input, and separating into a plurality of signals may comprise performing initial convolution and down-sampling on the inputted mono sound source audio signal; generating an encoded signal by encoding the inputted signal using at least one first dense block and at least one down-transition layer; generating a decoded signal by decoding the encoded signal using at least one second dense block and at least one up-transition layer; and performing final convolution and resize on the decoded signal.

Abstract: A main Insulated Gate Bipolar Transistor (IGBT) and a sense IGBT may have a sense resistor connected between a sense emitter of the sense IGBT and a main emitter of the main IGBT. Back-to-back Zener diodes may be connected between a sense gate of the sense IGBT and the sense emitter, and configured to clamp a voltage between the sense gate and the sense emitter during an electrostatic discharge (ESD) event.

Abstract: Disclosed are a learning data generation method and apparatus needed to learn animation characters on the basis of deep learning. The learning data generation method needed to learn animation characters on the basis of deep learning may include collecting various images from an external source using wired/wireless communication, acquiring character images from the collected images using a character detection module, clustering the acquired character images, selecting learning data from among the clustered images, and inputting the selected learning data to an artificial neural network for character recognition.

Abstract: The present invention relates to a method of improving the quality of therapeutic cells by real-time glutathione monitoring.

Abstract: The present invention provides a method of measuring the quality of therapeutic cells through real-time glutathione monitoring.

Abstract: The present invention relates to a real-time fluorescence imaging sensor for measuring glutathione in cell organelles and a method for fabricating the same. More specifically, the present invention relates to a novel compound for measuring glutathione in cell organelles, a method for preparing the novel compound, a real-time fluorescence imaging sensor for measuring glutathione in cell organelles, which comprises the novel compound, a method for fabricating the imaging sensor, and a method of measuring glutathione in cell organelles by use of the imaging sensor. When the composition comprising the compound according to the present invention is used, it can measure the antioxidant activity of the organelle mitochondria or Golgi apparatus in living cells, particularly stem cells, and can screen highly active stem cells based on the results obtained by measuring the antioxidant activity of the cell organelle.

Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate.

Abstract: The present invention relates to a method and an apparatus for matching a virtual object in a virtual environment, the method including generating a point cloud of a non-rigid object, matching a low resolution virtual model to the point cloud, and implementing a high resolution model using the matched model.

Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate. The diode part includes a p-type body region disposed inside the substrate and electrically connected with the anode terminal, an n-type well disposed on one side of the p-type body region and having a first impurity concentration, and a first n-type semiconductor region disposed below the p-type body region and having a second impurity concentration which is lower than the first impurity concentration.

Abstract: A power semiconductor device includes a substrate including a first epitaxial layer, a second epitaxial layer, and a base substrate where the first epitaxial layer is disposed between the second epitaxial layer and the base substrate. The power semiconductor device includes an anode electrode and a cathode electrode disposed on the substrate, a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity. The power semiconductor device includes an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration. The power semiconductor device includes an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.

Abstract: A power semiconductor device includes a substrate including a first epitaxial layer, a second epitaxial layer, and a base substrate where the first epitaxial layer is disposed between the second epitaxial layer and the base substrate. The power semiconductor device includes an anode electrode and a cathode electrode disposed on the substrate, a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity. The power semiconductor device includes an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration. The power semiconductor device includes an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.

Abstract: A power semiconductor device includes: a substrate; an anode electrode and a cathode electrode disposed on the substrate; a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity; an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration; and an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.