Patents by Inventor Hye-mi Kim

Hye-mi Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11407848
    Abstract: A method is provided for preparing a super absorbent polymer capable of exhibiting an excellent absorption rate by including a uniform porous structure through a simple and economical process. The method includes: performing a crosslinking polymerization of a water-soluble ethylenically unsaturated monomer to form a hydrogel polymer; drying and pulverizing the hydrogel polymer; classifying the pulverized polymer into polymer particles having a particle size of at least 10 to 150 ?m, polymer particles having a particle size of 150 to 200 ?m, and polymer particles having a particle size of 200 to 850 ?m to form a base polymer powder having a particle size of 150 to 850 ?m; and surface-crosslinking the base polymer powder, wherein in the crosslinking polymerization step, the foaming polymerization proceeds in the presence of polymer particles having an average particle size of 10 to 200 ?m obtained in the classifying step and an anionic surfactant.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: August 9, 2022
    Inventors: Moo Kon Kim, Sang Gi Lee, Hye Mi Nam, Chang Hun Lee, Tae Yun Kim
  • Publication number: 20220235140
    Abstract: The present invention relates to an antibody or an antigen-binding fragment thereof that has improved binding affinity for endothelin receptor type A. The present invention also relates to an antibody or an antigen-binding fragment thereof that has improved productivity. The antibody developed in the present invention is suitable for use in the treatment and diagnosis of diseases associated with endothelin receptor type A due to its remarkably improved binding affinity for the antigen and high productivity compared to conventional antibodies.
    Type: Application
    Filed: May 27, 2020
    Publication date: July 28, 2022
    Applicant: HEDGEHOG, INC.
    Inventors: Sang Taek JUNG, Youn Jae KIM, Hye-Mi AHN, Byoung Joon KO, Won Kyu LEE, Jung-Hyun NA, Man-Seok JU
  • Patent number: 11384208
    Abstract: A super absorbent polymer according to the present invention has an excellent discoloration resistance property even under high temperature/high humidity conditions, while maintaining excellent absorption performance, and is preferably used for hygienic materials such as diapers, and thus can exhibit excellent performance.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: July 12, 2022
    Inventors: Sang Gi Lee, Hye Mi Nam, Soo Jin Lee, Chang Sun Han, Moo Kon Kim
  • Publication number: 20220025079
    Abstract: A method for separating polybutene, the method including: (1) introducing a polybutene solution into a distillation column, the solution including polybutene, a halogenated hydrocarbon solvent, and a non-polar hydrocarbon solvent and having a viscosity of 1 cp to 50 cp measured at 25° C. using a rotational viscometer; (2) collecting an upper stream including the halogenated hydrocarbon solvent and a portion of the non-polar hydrocarbon solvent from an upper portion of the distillation column, and collecting a lower stream including the polybutene and a remaining portion of the non-polar hydrocarbon solvent from a lower portion of the distillation column, where the lower stream has a viscosity of 10 cp to 150 cp; and (3) separating the remaining portion of the non-polar hydrocarbon solvent and the polybutene from the lower stream.
    Type: Application
    Filed: January 17, 2020
    Publication date: January 27, 2022
    Inventors: Woo Sung HWANG, Jeong Seok LEE, Won Hee KIM, Hye Mi KIM, Gyeong Shin CHOI, Dong Hyun JO
  • Patent number: 11201144
    Abstract: A main Insulated Gate Bipolar Transistor (IGBT) and a sense IGBT may have a sense resistor connected between a sense emitter of the sense IGBT and a main emitter of the main IGBT. Back-to-back Zener diodes may be connected between a sense gate of the sense IGBT and the sense emitter, and configured to clamp a voltage between the sense gate and the sense emitter during an electrostatic discharge (ESD) event.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: December 14, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Hye-Mi Kim, Kyu-hyun Lee, Youngchul Kim, Seunghyun Hong
  • Patent number: 11183495
    Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: November 23, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Sun-hak Lee, Yong Zhong Hu, Hye-mi Kim
  • Publication number: 20210275596
    Abstract: The present invention relates to a therapeutic stem cell composition comprising a stem cell in which the expression level of any one or more genes selected from the group consisting of ACAN, SOX9, AP2, RUNX2, OCN, ALP, OCT4, SOX2, CXCR4, cMET, PDGFRA, PDGFRB, VEGF-R1, VEGF-R2, CSF-1, IDO2, Sox2, Nanog, cMyc, Klf2, Klf4, Rex1, Esrrb, Neurog1, Neurod1, Nkx2.2, Ascl2, Gfap, S100b, Olig2, Neurog2, T, Nkx2.5, Esrrbb, Klf2, Klf4, cTnT, a-Actin, Mlc2v and Runx1 is higher or lower than the expression level of GAPDH (glyceraldehyde 3-phosphate dehydrogenase) gene.
    Type: Application
    Filed: July 20, 2018
    Publication date: September 9, 2021
    Inventors: Heun Soo KANG, Hye Mi KIM, Ji Eun SONG, Yingfu YIN, Ji Woong SHIN, Hye Won KANG, Yong Hwan KIM
  • Patent number: 11106942
    Abstract: Disclosed are a learning data generation method and apparatus needed to learn animation characters on the basis of deep learning. The learning data generation method needed to learn animation characters on the basis of deep learning may include collecting various images from an external source using wired/wireless communication, acquiring character images from the collected images using a character detection module, clustering the acquired character images, selecting learning data from among the clustered images, and inputting the selected learning data to an artificial neural network for character recognition.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: August 31, 2021
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Dong Hyuck Im, Jung Hyun Kim, Hye Mi Kim, Jee Hyun Park, Yong Seok Seo, Won Young Yoo
  • Publication number: 20210120355
    Abstract: A method for receiving a mono sound source audio signal including phase information as an input, and separating into a plurality of signals may comprise performing initial convolution and down-sampling on the inputted mono sound source audio signal; generating an encoded signal by encoding the inputted signal using at least one first dense block and at least one down-transition layer; generating a decoded signal by decoding the encoded signal using at least one second dense block and at least one up-transition layer; and performing final convolution and resize on the decoded signal.
    Type: Application
    Filed: September 25, 2020
    Publication date: April 22, 2021
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Hye Mi KIM, Jung Hyun KIM, Jee Hyun PARK, Yong Seok SEO, Dong Hyuck IM, Won Young YOO
  • Publication number: 20210111171
    Abstract: A main Insulated Gate Bipolar Transistor (IGBT) and a sense IGBT may have a sense resistor connected between a sense emitter of the sense IGBT and a main emitter of the main IGBT. Back-to-back Zener diodes may be connected between a sense gate of the sense IGBT and the sense emitter, and configured to clamp a voltage between the sense gate and the sense emitter during an electrostatic discharge (ESD) event.
    Type: Application
    Filed: November 6, 2019
    Publication date: April 15, 2021
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Hye-Mi KIM, Kyu-hyun LEE, Youngchul KIM, Seunghyun HONG
  • Publication number: 20210103721
    Abstract: Disclosed are a learning data generation method and apparatus needed to learn animation characters on the basis of deep learning. The learning data generation method needed to learn animation characters on the basis of deep learning may include collecting various images from an external source using wired/wireless communication, acquiring character images from the collected images using a character detection module, clustering the acquired character images, selecting learning data from among the clustered images, and inputting the selected learning data to an artificial neural network for character recognition.
    Type: Application
    Filed: November 26, 2019
    Publication date: April 8, 2021
    Inventors: Dong Hyuck IM, Jung Hyun KIM, Hye Mi KIM, Jee Hyun PARK, Yong Seok SEO, Won Young YOO
  • Publication number: 20210003582
    Abstract: The present invention relates to a method of improving the quality of therapeutic cells by real-time glutathione monitoring.
    Type: Application
    Filed: November 28, 2018
    Publication date: January 7, 2021
    Inventors: Heun Soo Kang, Hye Mi Kim, Ji Eun Song, Gwang Mo Yang, Ji Woong Shin, Hye Won Kang, Yong Hwan Kim, Myung Jin Kim
  • Publication number: 20200363422
    Abstract: The present invention provides a method of measuring the quality of therapeutic cells through real-time glutathione monitoring.
    Type: Application
    Filed: November 28, 2018
    Publication date: November 19, 2020
    Inventors: Heun Soo Kang, Hye Mi Kim, Ji Eun Song, Gwang Mo Yang, Ji Woong Shin, Hye Won Kang, Yong Hwan Kim, Myung Jin Kim
  • Publication number: 20200354388
    Abstract: The present invention relates to a real-time fluorescence imaging sensor for measuring glutathione in cell organelles and a method for fabricating the same. More specifically, the present invention relates to a novel compound for measuring glutathione in cell organelles, a method for preparing the novel compound, a real-time fluorescence imaging sensor for measuring glutathione in cell organelles, which comprises the novel compound, a method for fabricating the imaging sensor, and a method of measuring glutathione in cell organelles by use of the imaging sensor. When the composition comprising the compound according to the present invention is used, it can measure the antioxidant activity of the organelle mitochondria or Golgi apparatus in living cells, particularly stem cells, and can screen highly active stem cells based on the results obtained by measuring the antioxidant activity of the cell organelle.
    Type: Application
    Filed: August 23, 2018
    Publication date: November 12, 2020
    Inventors: Heun Soo Kang, Hye Mi Kim, Ji Eun Song, Myoung Jin Kim, Ki Hang Choi
  • Publication number: 20190348412
    Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate.
    Type: Application
    Filed: July 25, 2019
    Publication date: November 14, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Sun-hak LEE, Yong Zhong HU, Hye-mi KIM
  • Publication number: 20190318548
    Abstract: The present invention relates to a method and an apparatus for matching a virtual object in a virtual environment, the method including generating a point cloud of a non-rigid object, matching a low resolution virtual model to the point cloud, and implementing a high resolution model using the matched model.
    Type: Application
    Filed: April 15, 2019
    Publication date: October 17, 2019
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Yong Sun KIM, Hye Mi KIM, Ki Tae KIM, Ki Hong KIM
  • Patent number: 10366981
    Abstract: A power semiconductor device includes a diode part disposed in a first region of a substrate, a junction field effect transistor (JFET) part disposed in a second region adjacent to the first region of the substrate, an anode terminal disposed on the first region of the substrate, and a cathode terminal disposed on the second region of the substrate. The diode part includes a p-type body region disposed inside the substrate and electrically connected with the anode terminal, an n-type well disposed on one side of the p-type body region and having a first impurity concentration, and a first n-type semiconductor region disposed below the p-type body region and having a second impurity concentration which is lower than the first impurity concentration.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: July 30, 2019
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Sun-hak Lee, Yong Zhong Hu, Hye-mi Kim
  • Patent number: 10312322
    Abstract: A power semiconductor device includes a substrate including a first epitaxial layer, a second epitaxial layer, and a base substrate where the first epitaxial layer is disposed between the second epitaxial layer and the base substrate. The power semiconductor device includes an anode electrode and a cathode electrode disposed on the substrate, a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity. The power semiconductor device includes an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration. The power semiconductor device includes an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: June 4, 2019
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Hye-mi Kim, Sun-hak Lee
  • Publication number: 20180233555
    Abstract: A power semiconductor device includes a substrate including a first epitaxial layer, a second epitaxial layer, and a base substrate where the first epitaxial layer is disposed between the second epitaxial layer and the base substrate. The power semiconductor device includes an anode electrode and a cathode electrode disposed on the substrate, a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity. The power semiconductor device includes an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration. The power semiconductor device includes an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.
    Type: Application
    Filed: April 13, 2018
    Publication date: August 16, 2018
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Hye-mi Kim, Sun-hak Lee
  • Patent number: 9947742
    Abstract: A power semiconductor device includes: a substrate; an anode electrode and a cathode electrode disposed on the substrate; a well region disposed inside the substrate in a lower portion of the anode electrode, and having p-type conductivity; an NISO region disposed in a lower portion of the well region inside the substrate, and having a first n-type impurity concentration; and an n-type buried layer disposed in a lower portion of the NISO region, and having a second impurity concentration greater than the first n-type impurity concentration, inside the substrate.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: April 17, 2018
    Assignee: Fairchild Korea Semiconductor Ltd.
    Inventors: Hye-mi Kim, Sun-hak Lee