Abstract: The present invention is directed to a coating composition including a (meth)acrylate binder resin, a UV initiator, an organic solvent, and silica particles surface-treated with a (meth)acrylate compound, a coating film including a cured product of the coating composition, and a method of producing the coating film. The present invention makes it possible to provide a coating material having high transmittance and a low level of haze, and excellent scratch resistance and self-healing capabilities.

Abstract: An HA-protein conjugate in which an HA-aldehyde derivative, in which an aldehyde group is introduced to a hyaluronic acid or a salt thereof, is conjugated to the N-terminus of a protein, and a method for preparing the same are provided. The HA-protein conjugate includes a protein drug exhibiting an excellent bioconjugation efficiency and long-term medicinal effects, and has excellent protein drug activities since the hyaluronic acid is specifically conjugated to the N-terminus of the protein. Also, since liver-targeting properties of the hyaluronic acid can be freely controlled by changing an aldehyde substitution rate of the HA-aldehyde derivative, the HA-protein conjugate can be effectively used as a protein drug for treating liver diseases, and also be useful in enabling long-term medicinal effects of a protein drug required to bypass the liver. Accordingly, the HA-protein conjugate can be effectively used for a drug delivery system of proteins.

Abstract: Provided is a functional styrene-butadiene copolymer having superior silica affinity. The copolymer is prepared by radical polymerizing a styrene monomer, a butadiene monomer and a reactive polyol monomer in emulsion state in order to maximize the mixing effect when compounding with silica. When mixed with silica, the disclosed styrene-butadiene copolymer provides excellent wet traction and superior abrasion resistance, and is suitable to be used for an industrial material of snow tires, belts, hoses, etc.

Abstract: Provided is a functional styrene-butadiene copolymer having superior silica affinity. The copolymer is prepared by radical polymerizing a styrene monomer, a butadiene monomer and a reactive polyol monomer in emulsion state in order to maximize the mixing effect when compounding with silica. When mixed with silica, the disclosed styrene-butadiene copolymer provides excellent wet traction and superior abrasion resistance, and is suitable to be used for an industrial material of snow tires, belts, hoses, etc.

Abstract: The present invention relates to a UV curable photochromic composition comprising a photochromic dye and an acrylate-based prepolymer having a polyol structure in which an acrylate-based functional group is introduced by using an iso-cyanate-based compound having two or more isocyanate functional groups as a linker, and to products formed by using the same.

Abstract: The present invention provides a coating composition and a coating film, which comprises a) a binder resin containing a UV-curable functional group; b) a compound containing a fluorine UV-curable functional group; c) a photoinitiator; d) nano-sized particles; and e) conductive inorganic particles.

Abstract: The present invention relates to a UV curable photochromic composition comprising a photochromic dye and an acrylate-based prepolymer having a polyol structure in which an acrylate-based functional group is introduced by using an iso-cyanate-based compound having two or more isocyanate functional groups as a linker, and to products formed by using the same.

Abstract: A semiconductor device may include a semiconductor substrate and first and second transistors. The first transistor may have a first gate structure on the semiconductor substrate, and the first gate structure may include a first gate insulating layer between a first gate electrode and the semiconductor substrate. The first gate insulating layer may include first and second dielectric materials with the second dielectric material having a greater dielectric constant than the first dielectric material. Moreover, the first gate electrode may be in contact with the second dielectric material. The second transistor may have a second gate structure on the semiconductor substrate, with the second gate structure including a second gate insulating layer between a second gate electrode and the semiconductor substrate. Related methods are also discussed.

Abstract: Example embodiments relate to a gate electrode, a method of forming the gate electrode, a transistor having the gate electrode, a method of manufacturing the transistor, a semiconductor device having the transistor and a method of manufacturing the semiconductor device. The gate electrode may include an embossing structure including a metal or a metal compound and having a first work function and a conductive layer pattern having a second work function formed on the embossing structure. A work function of the gate electrode may be adjusted between a work function of the embossing structure and a work function of the conductive layer pattern formed on the embossing structure. An NMOS transistor and a PMOS transistor having different work functions respectively may be formed on a substrate.

Abstract: A semiconductor device includes a substrate divided into an NMOS region and a PMOS region, a first gate pattern formed on the PMOS region, and a second gate pattern formed on the NMOS region. The first gate pattern includes a first gate oxide layer pattern, a metal oxide layer pattern, a silicon nitride layer pattern and a first polysilicon layer pattern that are sequentially stacked. The second gate pattern includes a second oxide layer pattern and a second polysilicon layer pattern. Related methods are also provided.

Abstract: A semiconductor structure includes a material layer on a substrate and to be patterned, an amorphous carbon layer on the material layer to be patterned, an N-free anti-reflective layer on the amorphous carbon layer, and a photoresist layer on the N-free anti-reflective layer. The N-free anti-reflective layer contains SiCXOYHZ as a main element. Related methods of patterning semiconductor structures also are provided.